DISCRETE SEMICONDUCTORS
DATA SHEET
BB131
VHF variable capacitance diode
Product specification
Supersedes data of 1998 Sep 15
2004 Feb 10
NXP Semiconductors
Product specification
VHF variable capacitance diode
FEATURES
Excellent linearity
Very small plastic SMD package
C28: 1 pF; ratio: 14.
APPLICATIONS
Electronic tuning in satellite tuners
Tunable coupling
VCO.
PINNING
PIN
1
2
BB131
DESCRIPTION
cathode
anode
1
2
sym008
DESCRIPTION
The BB131 is a variable capacitance diode, fabricated in
planar technology, and encapsulated in the SOD323
(SC-76) very small plastic SMD package.
Marking code:
P1.
The marking bar indicates the cathode.
Fig.1
Simplified outline (SOD323; SC-76) and
symbol.
ORDERING INFORMATION
TYPE
NUMBER
BB131
PACKAGE
NAME
DESCRIPTION
plastic surface mounted package; 2 leads
VERSION
SOD323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
R
I
F
T
stg
T
j
continuous reverse voltage
continuous forward current
storage temperature
operating junction temperature
PARAMETER
55
55
MIN.
MAX.
30
20
+150
+125
V
mA
C
C
UNIT
2004 Feb 10
2
NXP Semiconductors
Product specification
VHF variable capacitance diode
CHARACTERISTICS
T
j
= 25
C
unless otherwise specified.
SYMBOL
I
R
r
s
C
d
C
d
0.5V
-------------------
-
C
d
28V
Note
1. V
R
is the value at which C
d
= 9 pF.
PARAMETER
reverse current
diode series resistance
diode capacitance
capacitance ratio
CONDITIONS
V
R
= 30 V; see Fig.3
V
R
= 30 V; T
j
= 85
C;
see Fig.3
f = 470 MHz; note 1
V
R
= 0.5 V; f = 1 MHz; see Figs 2 and 4
V
R
= 28 V; f = 1 MHz; see Figs 2 and 4
f = 1 MHz
8
0.7
12
MIN.
BB131
MAX.
10
200
3
17
1.055
16
UNIT
nA
nA
pF
pF
2004 Feb 10
3
NXP Semiconductors
Product specification
VHF variable capacitance diode
GRAPHICAL DATA
BB131
MBE872
handbook, full pagewidth
15
Cd
(pF)
10
5
0
10
−1
T
j
= 25
C;
f = 1 MHz.
1
10
VR (V)
10
2
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
10
3
handbook, halfpage
MLC816
10
3
handbook, halfpage
MLC815
IR
(nA)
TC d
(K
−1
)
10
2
10
4
10
0
50
T j (
o
C)
100
10
5
10
1
1
10
VR (V)
10
2
T
j
= 0 to 85
C.
Fig.4
Fig.3
Reverse current as a function of junction
temperature; maximum values.
Temperature coefficient of diode
capacitance as a function of
reverse voltage; typical values.
2004 Feb 10
4
NXP Semiconductors
Product specification
VHF variable capacitance diode
PACKAGE OUTLINE
Plastic surface-mounted package; 2 leads
BB131
SOD323
D
A
E
X
H
D
v
M
A
Q
1
2
b
p
A
A
1
(1)
c
L
p
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A
1
max
0.05
b
p
0.40
0.25
c
0.25
0.10
D
1.8
1.6
E
1.35
1.15
H
D
2.7
2.3
L
p
0.45
0.15
Q
0.25
0.15
v
0.2
Note
1. The marking bar indicates the cathode
OUTLINE
VERSION
SOD323
REFERENCES
IEC
JEDEC
JEITA
SC-76
EUROPEAN
PROJECTION
ISSUE DATE
03-12-17
06-03-16
2004 Feb 10
5
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