MOTOROLA
SEMICONDUCTOR
TECHNICAL
DATA
Order this document
by MRW536011D
The RF Line
o
Microwave Linear
Power Wansistor
large–signal
stages in the 1.0 to 3.0 GHz frequency range.
Designed for Class A or AB, Common-Emitter
Specified
20
Volt,
3.0 GHz Characteristics:
Output
Power — 0.8 Watts
MRw53ml
output and driver amplifier
tinear Power Amplifiers
. . .
designed primarily for wideband,
*,\
Power Gain — 7.5 to 8.5 dB, Min
q
q
Gold Metallization
for Improved Reliability
Diffused Ballast Resistors
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MNIMUM
RATINGS
Rating
Symbol
VCEO
VCES
VEBO
TJ
Tstg
Value
22
50
w
+t$:.
,
+* ,$
,,wt,’t::,T*
,.$ ,,,$.,
,
U*’ ~+&J:’~
,.5%:
,vVdc~
,~!.?
.,.
,,$.%;~
‘%@c
Collector–Emitter
Collector-Base
Emitter-Base
Voltage
Voltage
~,j~:
:.
., x
,
I
(
v-
afi
Voltage
3.5,C+>4?*$ Vdc
q?,”
~f –6&~o + 200
~c
CASE 326A+3,
STVLE
1
,Am .m.
(ar-ld)
1
Operating Junction Temperature
Storage Temperature
Range
‘c
THERMAL CHARACTERISTICS
Characteristic
Thermal
Thermal
Resistance,
Resistance,
RF, Junction to Case
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Symbol
RQJC
Max
31
35
Unit
DC, Junction to Cas~,;;!\~~~b”
....
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e. *.,?.
! ..:,,.
‘cm
‘cm
RBJC
ELECTRICAL
CHARACTERISTI$$$$;$
Characte[~sk~ ,.,,>.
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.,,,
-
I
Collector-Emitier
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS ~,,.,%’’+,.,:,...!
\\,“ }
Collector–Emitter Breakd$~~~ltage
(1c = 10 mA, IB =g~~
“-
~k~wwn
o)
Voltage
V(BR)CBO
45
—
—
Vdc
Voltage
V(BR)CEO
22
—
—
Vdc
V(BR)CES
50
—
—
Vdc
(1C = 10 m$$@&
Collector~##&akdown
([c ~$%o;~,
iE = O)
E@y$r~~e
@~.,f~0”25
Breakdown Voltage
mA, IC = O)
V(BR)EBO
3.5
—
—
Vdc
‘~@3~ector Cutoff Current
“:’ (VCB = 28 V, iE = O)
ON
CHARACTERISTICS
DC Current Gain
(1c = 100 mA, V~E = 5,0 V)
DYNAMIC
CHARACTERISTICS
ICBO
—
—
0.25
mAdc
hFE
20
—
120
—
Output Capacitance
NCB=28v,lE
=0, f=l.OMHz)
Cob
—
—
3.5
pF
(continued)
@
Motorola, Inc. 1994
MO~ROLA
@
Characteristic
FUNCTIONAL
TESTS
Symbol
Min
Typ
M=
Unit
Common-EmitierAmplifierPowerGain
(VCE =
20
V, Pout =
0.8
W, f =
2,0 GHz)
Load Mismatch
(VCE =
20
V, IE =
120
mA, Pout = 0.8 W, f = 2.0 GHz,
Load VSWR = -:1, All Phase Angles)
Cutoff Frequency (VCE = 20 V, IE = 120 mA)
Gain Unearity
(VcE = 20 V, IE = 120 mA, f = 2.0 GHz, Pot = 0.8 W, P02 = 0.8 mW)
Intermodulation Distotion, 3rd Order
(VcE = 20 V, IE = 120 mA, PO (PEP) = 0.8 W,
Tones at 2.0 GHz and 3.005 GHz)
GpE
8.5
—
—
dB
v
No Degradation
—
—
—
—
in Output Power
f~
LG
3.0
—
—
–30
—
IMD
J
,~$., ,~$.~
TYPICAL CHARACTERISTICS
I
1
I
61
,.*
T*
1
1
I
I
1-
15
I
200
t=
Z
.
,
“o
50
100
tiHq:~
TFM*:$$$$
,tp<:p&
‘
200
0
50
100
IE, EMl~ER CURREM~{rn~, *
!?$;eit,~
,f&\:/?+
f=2GHz
TF~NGE = 25°C
150
IE, EMl~ER CURRENT(mA)
Figure 1. 1.0 dB ComR[~i~
Emiti&C&rent
Point versus
Figure 2. Gain versus Emitier Current
I
I
VCE, COLLECTOR-T&EMITTER
VOLTAGE (VOLTS)
figure 3. DC Safe Operating Area
MRW53601
2’
MOTOROLA RF DEVICE DATA
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Motorola rese~~w~ht
to make changes withoutfurthernotice
to any products herein. Motorola makes no warran~, representation or guarantee regarting
the suitabiliwf
i~$$~oducts for any paticular purpose, nor does Motorola assume any IiabiHty arising out of the application or use of any product or circuit,
and ape~j~~ly @c(aims any and all Iiabitity, including without limitation consequential or incidental damages. Typical” parameters can and do vary in different
,.’
aPPli~f~.’’~~Pem~n9n9
Parameteffi, includn97YPica15° must be vahdated for each customer application by customer’s technical experts. Motorols does
not COW*
license under its patent rights nor the rights of others. Motorola products are not deeigned, intended, or authorized for use as components in
‘WS.~tended
‘or sur9ical imPlant into the bodY, or other aPPlica~ons intended to SUPPOflor sustain life, or for any other appkcation in which the failure of
thX@brola
product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such
unimnded or unauthorized application, Buyer shall indemnify and hold Motorola and its oficers, employees, subsidiaries, affiliates, and dstrtbutors hamlese
againat all claime, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indrectly, any claim of personal injury or death
associated with euch unintended or unauthorized use, even if euch claim alleges that Motorola was negtigent regarding the deeign or manufacture of the part.
Motorola and @ are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Oppotiunity/Affirrnative
Action Employer.
Literature ~etribution
Centers
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes,MKI45BP,
England.
JAPAN: Nippon Motorola Ltd.; 4-32-1, Nlshi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Sihcon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
@
MO~ROLA
~
MRW53601D
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