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MRF227

产品描述Trans GP BJT NPN 18V 7A 4-Pin Case 211-07
产品类别分立半导体    晶体管   
文件大小45KB,共1页
制造商New Jersey Semiconductor
官网地址http://www.njsemi.com
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MRF227概述

Trans GP BJT NPN 18V 7A 4-Pin Case 211-07

MRF227规格参数

参数名称属性值
厂商名称New Jersey Semiconductor
Reach Compliance Codeunknown

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,
Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
MRF227
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
SILICON NPN RF POWER TRANSISTOR
DESCRIPTION: The MRF227 is
designed for large signal power
amplifier applications operating to
225 MHz
PACKAGE STYLE TO-39
MAXIMUM RATINGS
Ic
VCB
VCE
PDISS
0.6 A
36V
16V
8 W @ T
c
= 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
I.6M
MIN
OJM-JJ70
'(UM-UMT
G.3U-I.3M
VKH-rSM)'
nju-o.MO
(I.OM-«Jd4|
~
SfATIMG
Tj
TSTG
•i.
g | u
T
»»«-••«'• JU
O.IM-07H
"i M.«2i-»J34)
(uSii
1 = EMITTER
2 = BASE
3 = COLLECTOR
CHARACTERISTICS T
c
= 25°c
SYMBOL
TEST CONDITIONS
l
c
= 50 mA
BVcEo
BVc
E
s
BV
EBO
ICBO
MINIMUM
16
36
4.0
TYPICAL
MAXIMUM
UNITS
V
V
V
l
c
= 50 mA
l
c
= 10mA
V
CE
= 15V
1.0
mA
..
.
H
FE
VCE = 5.0V
VCB = 12.5V
l
c
= 100mA
f= 1.0 MHz
20
200
COB
Gp
E
15
Pf
POUT = 3.0 W VCE = 12.5V
f = 225 MHz
13.5
15
dB
T!
POUT = 3.0 W VCE = 12.5 V
f = 225 MHz
60
%
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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