FIG. AMBIENT RS1A-RS1G
PHASE
125
WAVE 60Hz
175
1 –
25°C
TEMPERATURE (℃)
FORWARD
SINGLE
20
HALF
150 100
RS1J-SR1M
1 MHz
10
1 25
TJ =
50
f
4
=
75
CURRENT DERATING CURVE
100
FIG.
SINGLE
– MAXIMUM NON-
1
2
5
0.8
0.00
2
0.2 0.4 0.6
10
HYESD1065M / HYESD1065P
6 Channel Low Capacitance ESD Protection Diode Array
HYESD1065 is a 6-channel ultra low capacitance ESD protection diode array which includes surge rated
to protect high speed data lines.Each channel consists of a pair of ESD diodes that steer positive or
negative ESD current to either the positive or negative rail. Typical application, the negative rail pin
( Assigned as GND ) is connected with system ground. The Positive ESD current is steered to the ground
through an ESD diode and Zener diode and the positive ESD voltage is clamped to the zener voltage.
FEATURES
• 6 Channel ESD protection for high speed data line
• Provides ESD protection to IEC61000-4-2 level 4
- + 15KV Air Discharge
- + 8KV Contact Discharge
• Ultra low capacitance
- I/O to GND : 0.4pF ( Max )
- I/O to I/O : 0.25pF ( Max )
• Low clamping voltage & 5V operation voltage
APPLICATION
• HDMI / DVI ports
• Display port
• USB 3.0 port
• Flat panel Monitors / TVs
• Cellular Handsets & Accessories
• PCI Express
MECHANICAL INFORMATION
• Case : MSOP-8 / DFN-10-4.1x2.0x0.5
Package
• Pb-Free, Halogen Free, RoHS/WEEE Complian
HYESD1065M
MSOP-8
PIN CONFIGURATION
I/O 1
I/O 2
I/O 3
I/O 4
VDD
GND
I/O 6
I/O 5
I/O 1
V
REF
NC
I/O 2
I/O 3
HYESD1065P
DFN-10
I/O 6
GND
NC
I/O 5
I/O 4
MSOP-8
DFN-10-4.1x2.0x0.5
REV.1, 20-Mar-2012
HYESD1065M / HYESD1065P
Maximum Rating and Thermal Characteristics ( T
C
=25℃ )
Parameter
Peak Pulse Power(8/20μs)
Peak Pulse Current(8/20μs)
ESD per IEC 61000-4-2(Air)
ESD per IEC 61000-4-2(Contact)
Operating Temperature Range
Storage Temperature Range
Symbol
P
PP
I
PP
V
ESD
V
ESD
T
op
T
stg
Value
150
5
+15KV
+8KV
-55 to +125
-55 to +150
Unit
W
A
V
V
℃
℃
Electrical Characteristics ( T
C
=25℃, unless otherwise noted )
Parameter
Reverse Working Voltage
Reverse Breakdown Voltage
Reverse Leakage Current
Symbol
Test Condition
I
BR
=1mA;
I/O pin to GND
V
RWM
=5V, T=25°C;
I/O pin to GND
I
PP
=1A, t
P
=8/20us;
Positive pulse;
Any I/O pin to GND
I
PP
=1A, t
P
=8/20us;
Negative pulse;
Any I/O pin to GND
V
R
=0V, f=1MHz;
Between I/O pins
V
R
=0V, f=1MHz;
Any I/O pin to GND
Min
-
6
-
Typ
-
-
-
Max
5
Unit
V
V
V
RWM
Any I/O pin to GND
V
BR
I
R
1
uA
Positive Clamping Voltage
V
C
-
8.5
12
V
Negative Clamping Voltage
V
C
-
1.8
-
V
Junction Capacitance
Between Channel
Junction Capacitance
Between I/O And GND
C
J
C
J
-
-
0.2
-
0.25
0.4
pF
pF
REV. 1, 20-Mar-2012
RATING AND CHARACTERISTIC CURVES
HYESD1065M / HYESD1065P
Typical Characteristic Curves ( T
J
=25℃, UNLESS OTHERWISE NOTED )
FIG.1 - Power Derating Curve
160
140
Percentage of I
PP
120
Power
100
80
60
40
20
0
0
25
50
75
100
125
150
Ambient Temperature (℃)
0
0
5
100
80
60
40
20
FIG.2 - Pulse Waveform
Peak Value
IRSM@8us
Half Value
IRSM/2@20us
10
15
Time (us)
20
25
30
FIG.3 - Junction Capacitance
vs. Reverse Voltage
FIG.4 - Clamping Voltage
vs. Peak Pulse Current
20
0.5
CJ, Junction Capacitance (pF)
Clamping Voltage (V)
0.4
15
0.3
0.2
0.1
0
0
1
IO / GND
10
IO / IO
F=1MHz
5
Waveform
tr=8us, td=20us
0
2
3
4
0
1
2
3
4
5
6
7
Reverse Voltage - V
R
(V)
Peak Pulse Current (A)
REV. 1, 20-Mar-2012
HYESD1065M / HYESD1065P
Order & Marking Information
Part Number
HYESD1065M
HYESD1065P
Package
MSOP-8
DFN-10-4.1x2.0x0.5
Marking
1065
65P
Packing
13" Reel
7" Reel
Q'ty
3K
3K
Package Outline Dimension
MSOP-8 Package
DFN-10 Package
REV. 1, 20-Mar-2012
DSP 与 ARM 处理器
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