FIG.
SINGLE
4
TEMPERATURE (℃)
FORWARD
10
AMBIENT
75
CURRENT
125
1 25
T
1 –
50
PHASE HALF WAVE 60Hz
DERATING CURVE
100 20
150 100
175
FIG.
SINGLE
– MAXIMUM NON-
1
2
5
0.00
2
0.2 0.4 0.6
10
HY4N65D / HY4N65M
650V / 4A
N-Channel Enhancement Mode MOSFET
Features
• Low On-State Resistance
• Fast Switching
• Low Gate Charge & Low C
RSS
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charger and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
650V, R
DS(ON)
=2.8W@V
GS
=10V, I
D
=2A
TO-252
TO-251
1 2
G D3
S
Mechanical Information
• Case: TO-252 / TO-251 Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
2
1
G 2 3
D
S
Drain
Marking & Ordering Information
TYPE
HY4N65D
HY4N65M
1
MARKING
4N65D
4N65M
PACKAGE
TO-252
TO-251
PACKING
Gate
2500PCS/REEL
80PCS/TUBE
3
Source
Absolute Maximum Ratings (T
C
=25°C unless otherwise specified )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1)
Maximum Power Dissipation
Derating Factor
Avalanche Energy with Single Pulse
I
AS
=4A, V
DD
=150V, L=22.5mH
Operating Junction and Storage Temperature Range
T
C
=25℃
T
C
=25℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
T
J,
T
STG
HY4N65D
650
+30
4
16
56.8
0.46
180
HY4N65M
Units
V
V
4
16
48
0.39
A
A
W
mJ
℃
-55 to +150
Note : 1. Maximum DC current limited by the package
Thermal Characteristics
Parameter
Junction-to-Case Thermal Resistance
Junction-to-Case Thermal Resistance
Symbol
R
qJC
R
qJA
HY4N65D
2.2
50
HY4N65M
2.6
110
Units
℃/W
℃/W
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV 1.0, 20-Sept-2012
PAGE.1
HY4N65D / HY4N65M
Electrical Characteristics ( T
C
=25℃, Unless otherwise noted )
Paramter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
BV
DSS
V
GS(th)
R
DS(ON)
I
DSS
I
GSS
V
GS
=0V、I
D
=250uA
V
DS
=V
GS
、I
D
=250uA
V
GS
=10V、I
D
=2A
V
DS
=650V、V
GS
=0V
V
GS
=+30V、V
DS
=0V
650
2.0
-
-
-
-
-
2.5
-
-
-
4.0
2.8
10
+100
V
V
W
uA
nA
Symbol
Test Condition
Min.
Typ.
Max.
Units
Zero Gate Voltage Drain Current
Gate Body Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
DS
=25V，V
GS
=0V
f=1.0M
HZ
V
DD
=325V，I
D
=4A
V
GS
=10V，R
G
=25W
V
DS
=520V，I
D
=4A
V
GS
=10V
-
-
-
-
-
-
-
-
-
-
16.2
3.2
5.6
16.8
36
21.8
19.2
480
65
1.3
20
-
-
22
46
ns
32
28
-
-
-
pF
nC
Source-Drain Diode
Max. Diode Forwad Voltage
Max. Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
-
-
I
S
=4A、V
GS
=0V
V
GS
=0V、I
S
=4A
di/dt=100A/us
-
-
-
-
-
-
-
-
210
0.8
4.0
16
1.4
-
-
A
A
V
ns
uC
NOTE :
Pulse Test : Pulse Width
≦
300us, duty cycle
≦
2%
REV 1.0, 20-Sept-2012
PAGE.2
HY4N65D / HY4N65M
Typical Characteristics Curves ( T
C
=25℃, unless otherwise noted)
7
I
D
- Drain-to-Source Current (A)
6
5
4
V
GS
= 20V~ 8.0V
10
I
D
- Drain Source Current (A)
V
DS
=50V
7.0V
6.0V
3
2
1
25
o
C
T
J
= 125
o
C
-55
o
C
5.0V
1
0
0
10
20
30
40
50
V
DS
- Drain-to-Source Voltage (V)
0.1
1
2
3
4
5
6
7
8
V
GS
- Gate-to-Source Voltage (V)
9
Fig.1 Output Characteristric
8
R
DS(ON)
- On Resistance(W)
R
DS(ON)
- On Resistance(W)
12
10
8
6
4
2
0
0
2
4
6
8
4
Fig.2 Transfer Characteristric
I
D
=2.0A
6
4
V
GS
=10V
2
V
GS
= 20V
0
5
6
7
8
9
10
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
Fig.3 On-Resistance vs Drain Current
1000
Fig.4 On-Resistance vs Gate to Source Voltage
12
V
GS
- Gate-to-Source Voltage (V)
C - Capacitance (pF)
800
f = 1MHz
V
GS
= 0V
I
D
=4.0A
10
V
DS
=520V
V
DS
=325V
8
6
4
2
0
600
Ciss
400
V
DS
=130V
200
Crss
0
Coss
0
5
10
15
20
25
30
0
2
4
6
8
10
12
14
16
18
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Gate Charge (nC)
Fig.5 Capacitance Characteristic
REV 1.0, 20-Sept-2012
Fig.6 Gate Charge Characteristic
PAGE.3
HY4N65D / HY4N65M
Typical Characteristics Curves ( T
C
=25℃, unless otherwise noted)
2.5
BV
DSS
- Breakdown Voltage
(Normalized)
R
DS(ON)
- On-Resistance
(Normalized)
V
GS
=10 V
I
D
=2.0A
2
1.2
I
D
= 250mA
1.1
1.5
1
1
0.9
0.5
0
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (
o
C)
0.8
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (
o
C)
Fig.7 On-Resistance vs Junction Temperature
100
Fig.8 Breakdown Voltage vs Junction Temperature
V
GS
= 0V
I
S
- Source Current (A)
10
T
J
= 125
o
C
1
25
o
C
-55
o
C
0.1
0.01
0.2
0.4
0.6
0.8
1
1.2
V
SD
- Source-to-Drain Voltage (V)
1.4
Fig.9 Body Diode Forward Voltage Characteristic
REV 1.0, 20-Sept-2012
PAGE.4
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