HY10N65T / HY10N65FT
650V / 10A
N-Channel Enhancement Mode MOSFET
Features
• Low ON Resistance
•
•
•
•
•
Fast Switching
Low Gate Charge & Low C
RSS
Fully Characterized Avalanche Voltage and Current
Specially Desigened for AC Adapter, Battery Charger and SMPS
In compliance with EU RoHs 2002/95/EC Directives
650V, R
DS(ON)
=1.0Ω@V
GS
=10V, I
D
=5.0A
1
G 23
D
S
1
G 23
D
S
Mechanical Information
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
TO-220AB
ITO-220AB
2
Drain
Marking & Ordering Information
TYPE
HY10N65T
HY10N65FT
MARKING
10N65T
10N65FT
PACKAGE
TO-220AB
ITO-220AB
PACKING
50PCS/TUBE
50PCS/TUBE
1
Gate
Gate
3
Source
Absolute Maximum Ratings (T
C
=25
O
C unless otherwise noted )
P a ra me te r
D ra i n-S o urc e Vo lta g e
Ga te -S o urc e Vo lta g e
C o nti nuo us D ra i n C urre nt
P uls e d D ra i n C urre nt
1 )
Ma xi mum P o we r D i s s i p a ti o n
D e ra ti ng F a c to r
Avalanche Energy with Single Pulse
I
AS
=10A, VDD=90V, L=12mΗ
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e
T
C
=2 5
O
C
T
C
=2 5
O
C
S ymb o l
V
DS
V
GS
I
D
I
D M
P
D
E
AS
T
J
,T
S TG
HY1 0 N6 5 T
HY1 0 N6 5 F T
650
+3 0
Uni ts
V
V
10
40
156
1 .2 5
600
-5 5 to +1 5 0
10
40
50
0 .4
A
A
W
mJ
O
C
Note :
1. Maximum DC current limited by the package
Thermal Characteristics
PA RA M E TE R
Junction-to-Case Thermal Resistance
Junction-to Ambient Thermal Resistance
S ym b o l
R
θ
JC
R
θ
JA
HY1 0 N6 5 T
0 .8
6 2 .5
HY1 0 N6 5 F T
2 .5
100
Uni ts
O
C /W
C /W
O
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV1.0 : AUG. 2011
PAGE . 1
HY10N65T / HY10N65FT
Electrical Characteristics ( T
C
=25
O
C unless otherwise noted )
P a ra m e te r
S ymb o l
Te s t C o nd i ti o n
Mi n.
Typ .
Ma x.
Uni ts
S ta ti c
D ra i n-S o urc e B re a k d o wn Vo lta g e
B V
DSS
V
GS (th)
R
D S (o n)
I
DSS
I
GS S
V
GS
=0 V, I
D
=2 5 0 uA
V
D S
=V
GS
, I
D
=2 5 0 uA
V
GS
= 10V, I
D
=
5.0
A
V
DS
=6
5
0V, V
GS
=0V
V
GS
=+3 0 V, V
D S
=0 V
650
2 .0
-
-
-
-
-
0.84
-
-
-
4 .0
1.0
10
+1 0 0
V
V
Ω
uA
nΑ
Ga te Thre s ho ld Vo lta g e
D ra i n-S o urc e On-S ta te
Re s i s ta nc e
Ze ro Ga te Vo lta g e D ra i n
C urr e nt
Gate Body Leakage
Dynamic
To ta l Ga te C ha r g e
Ga te -S o urc e C ha rg e
Ga te -D ra i n C ha rg e
Turn- On D e la y Ti me
Turn- On Ri s e Ti m e
Turn- Off D e la y Ti m e
Turn- Off F a ll Ti m e
Inp ut C a p a c i ta nc e
Outp ut C a p a c i ta nc e
Re ve rs e Tra ns fe r
C a p a c i ta nc e
t
Q
g
Q
Q
t
gs
-
3 6 .4
7 .8
10.2
13.8
21.6
52
2 4 .8
11 5 0
145
4.5
48
-
-
18
32
ns
88
36
1850
175
12
pF
nC
V
D S
=
5 2 0
V, I
D
=
1 0
A ,
V
GS
=1 0 V
-
-
-
gd
d (o n)
t
r
d (o ff)
V
DD
=325V, I
D
=
10
A
V
GS
=1 0 V, R
G
=25Ω
-
-
-
-
t
C
C
C
f
i ss
oss
V
D S
=2 5 V, V
GS
=0 V
f=1 .0 MH
Z
-
-
rs s
S o urc e -D ra i n D i o d e
Ma x. D i o d e F o rwa rd C urre nt
I
S
I
SM
V
SD
t
Q
rr
-
-
I
S
=
1 0
A , V
GS
=0 V
V
GS
=0 V, I
F
=
1 0
A
d i /d t=1 0 0 A /us
-
-
-
-
-
-
-
-
440
4 .3
10
40
1 .4
-
-
A
A
V
ns
uC
M a x.P uls e d S o urc e C urre nt
D i o d e F o rwa rd Vo lta g e
Re ve rs e Re c o ve ry Ti me
Re ve rs e Re c o ve ry C ha rg e
rr
NOTE :
Plus Test : Pluse Width < 300us, Duty Cycle < 2%.
REV1.0 : AUG. 2011
PAGE . 2
HY10N65T / HY10N65FT
Typical Characteristics Curves ( T
C
=25℃, unless otherwise noted)
℃
20
I
D
- Drain-to-Source Current (A)
100
I
D
- Drain Source Current (A)
V
GS
= 20V~ 7.0V
V
DS
=50V
15
6.0V
10
10
T
J
= 125
o
C
25
o
C
1
5
5.0V
-55
o
C
0
0
10
20
30
40
50
0.1
1
2
3
4
5
6
7
V
GS
- Gate-to-Source Voltage (V)
8
V
DS
- Drain-to-Source Voltage (V)
Fig.1 Output Characteristric
1.6
Fig.2 Transfer Characteristric
3
R
DS(ON)
- On Resistance(Ω)
Resistance(
Ω
2.5
2
1.5
1
0.5
0
R
DS(ON)
- On Resistance(
Ω
)
Resistance(Ω
I
D
=5.0A
1.4
1.2
1
V
GS
=10V
0.8
V
GS
= 20V
0.6
0
2
4
6
8
10
12
14
16
3
4
5
6
7
8
9
10
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
Fig.3 On-Resistance vs Drain Current
2000
Fig.4 On-Resistance vs Gate to Source Voltage
12
V
GS
- Gate-to-Source Voltage (V)
C - Capacitance (pF)
f = 1MHz
V
GS
= 0V
1500
Ciss
1000
I
D
=10A
10
8
V
DS
=130V
V
DS
=520V
V
DS
=325V
6
4
2
0
0
5
10
15
20
25
30
35
40
Q
g
- Gate Charge (nC)
500
Coss
Crss
0
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
Fig.5 Capacitance Characteristic
REV 1.0 : AUG. 2011
Fig.6 Gate Charge Characteristic
PAGE. 3
HY10N65T / HY10N65FT
Typical Characteristics Curves ( T
C
=25℃, unless otherwise noted)
℃
2.5
2.1
1.7
1.3
0.9
0.5
-50
-25
0
25 50 75 100 125 150
T
J
- Junction Temperature (
o
C)
BV
DSS
- Breakdown Voltage
(Normalized)
R
DS(ON)
- On-Resistance
(Normalized)
V
GS
=10 V
I
D
=5.0A
1.2
I
D
= 250µA
1.1
1
0.9
0.8
-50
-25
0
25
50
75
100 125 150
TJ - Junction Temperature (oC)
Fig.7 On-Resistance
vs Junction Temperature
V
GS
= 0V
I
S
- Source Current (A)
10
T
J
= 125
o
C
1
Fig.8 Breakdown Voltage
vs Junction Temperature
25
o
C
-55
o
C
0.1
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
Fig.9 Body Diode
Forward Voltage Characteristic
REV 1.0 : AUG. 2011
PAGE. 4
模拟与混合信号
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
