FIG.
SINGLE
4
TEMPERATURE (℃)
FORWARD
10
AMBIENT
75
CURRENT
125
1 25
T
1 –
50
PHASE HALF WAVE 60Hz
DERATING CURVE
100 20
150 100
175
FIG.
SINGLE
– MAXIMUM NON-
1
2
5
0.00
2
0.2 0.4 0.6
10
HY125N10T
100V / 125A
N-Channel Enhancement Mode MOSFET
Features
• Low On-State Resistance
• Excellent Gate Charge x R
DS(ON)
Product ( FOM )
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for DC-DC Converter, Off-line UPS,
Automotive System, Solenoid and Motor Control
• In compliance with EU RoHs 2002/95/EC Directives
100V, R
DS(ON)
=5.8mW@V
GS
=10V, I
D
=40A
TO-220AB
2
Drain
Mechanical Information
• Case: TO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
3
2
1
Gate
3
Source
Marking & Ordering Information
TYPE
HY125N10T
1
MARKING
125N10T
PACKAGE
TO-220AB
PACKING
50PCS/TUBE
Absolute Maximum Ratings (T
C
=25°C unless otherwise specified )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1)
Pulsed Drain Current
1)
Maximum Power Dissipation
Derating Factor
Avalanche Energy with Single Pulse, L=0.3mH
Operating Junction and Storage Temperature Range
Note : 1. Maximum DC current limited by the package
T
C
=25℃
T
C
=25℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
T
J,
T
STG
Value
100
+20
120
480
192
1.28
1250
-55 to +175
Units
V
V
A
A
W
mJ
℃
Thermal Characteristics
Parameter
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Symbol
R
qJC
R
qJA
Value
0.78
62.5
Units
℃/W
℃/W
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV.1, 8-May-2012
PAGE.1
HY125N10T
Electrical Characteristics ( T
C
=25, Unless otherwise noted )
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Units
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
BV
DSS
V
GS(th)
R
DS(ON)
I
DSS
I
GSS
V
GS
=0V、I
D
=250uA
V
DS
=V
GS
、I
D
=250uA
V
GS
=10V、I
D
=80A
V
DS
=80V、V
GS
=0V
V
GS
=+20V、V
DS
=0V
100
2
-
-
-
-
3
4.6
-
-
-
4
5.8
1
100
V
V
mW
uA
nA
Zero Gate Voltage Drain Current
Gate Body Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Rg
V
DS
=30V，V
GS
=0V
f=1.0MH
Z
V
DD
=50V，I
D
=40A
V
GS
=10V，R
G
=3.6W
V
DS
=50V，I
D
=40A
V
GS
=10V
-
-
-
-
-
-
-
-
-
-
-
178
32
45
31.8
19.2
76
52
9200
680
320
1.3
-
-
-
-
-
ns
-
-
-
-
-
-
W
pF
nC
Source-Drain Diode
Max. Diode Forwad Voltage
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
V
SD
t
rr
Q
rr
-
I
S
=80A、V
GS
=0V
V
GS
=0V、I
S
=40A
di/dt=100A/us
-
-
-
-
-
0.86
72
210
120
1.4
-
-
A
V
ns
uC
NOTE :
Pulse Test : Pulse Width
≦
300us, duty cycle
≦
2%
REV.1, 8-May-2012
PAGE.2
HY125N10T
Typical Characteristics Curves ( T
C
=25℃, unless otherwise noted)
200
I
D
- Drain-to-Source Current (A)
8
R
DS(ON)
- On Resistance(mW)
V
GS
= 10V~ 8.0V
V
GS
=10V
7
160
7.0V
120
6.0V
6
80
5
40
5.0V
0
0
5
10
15
20
V
DS
- Drain-to-Source Voltage (V)
4
3
0
20
40
60
80
100
I
D
- Drain Current (A)
Fig.1 Output Characteristric
20
R
DS(ON)
- On Resistance(mW)
16
12
8
4
0
5
6
7
8
9
10
V
GS
- Gate-to-Source Voltage (V)
R
DS(ON)
- On-Resistance
(Normalized)
2.2
Fig.2 On-Resistance vs Drain Current
V
GS
=10 V
I
D
=80A
I
D
=80A
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100 125 150 175
T
J
- Junction Temperature (
o
C)
Fig.3 On-Resistance vs Gate to Source Voltage
12000
10000
Fig.4 On-Resistance vs Junction Temperature
12
V
GS
- Gate-to-Source Voltage (V)
C - Capacitance (pF)
f = 1MHz
V
GS
= 0V
Ciss
10
8
6
4
2
0
V
DS
=50V
I
D
=40A
8000
6000
4000
Coss
2000
Crss
0
0
5
10
15
20
25
30
0
40
80
120
160
200
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Gate Charge (nC)
Fig.5 Capacitance Characteristic
REV.1, 8-May-2012
Fig.6 Gate Charge Characteristic
PAGE.3
HY125N10T
Typical Characteristics Curves ( T
C
=25℃, unless otherwise noted)
200
BV
DSS
- Breakdown Voltage
(Normalized)
1.2
I
D
= 250mA
1.1
160
Power Rating
120
1
80
0.9
40
0
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (
o
C)
0.8
-50
-25
0
25
50
75
100 125 150 175
T
J
- Junction Temperature (
o
C)
Fig.7 Power Derating Curve
1000
V
GS
= 0V
I
S
- Source Current (A)
100
Fig.8 Breakdown Voltage vs Junction Temperature
10
T
J
= 125
o
C
25
o
C
1
-55
o
C
0.1
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
Fig.9 Body Diode Forward Voltage Characteristic
REV.1, 8-May-2012
PAGE.4
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