FIG.
SINGLE
4
TEMPERATURE (℃)
FORWARD
10
AMBIENT
75
CURRENT
125
1 25
T
1 –
50
PHASE HALF WAVE 60Hz
DERATING CURVE
100 20
150 100
175
FIG.
SINGLE
– MAXIMUM NON-
1
2
5
0.00
2
0.2 0.4 0.6
10
HY110N06T
55V / 110A
N-Channel Enhancement Mode MOSFET
Features
• Low On-State Resistance
• Excellent Gate Charge x R
DS(ON)
Product ( FOM )
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for DC-DC Converter, Off-line UPS,
Automotive System, Solenoid and Motor Control
• In compliance with EU RoHs 2002/95/EC Directives
55V, R
DS(ON)
=5.5mW@V
GS
=10V, I
D
=30A
TO-220AB
2
Drain
Mechanical Information
• Case: TO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
3
2
1
Gate
3
Source
Marking & Ordering Information
TYPE
HY110N06T
1
MARKING
110N06T
PACKAGE
TO-220AB
PACKING
50PCS/TUBE
Absolute Maximum Ratings (T
C
=25°C unless otherwise specified )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1)
Pulsed Drain Current
1)
Maximum Power Dissipation
Derating Factor
Avalanche Energy with Single Pulse, L=0.3mH
Operating Junction and Storage Temperature Range
Note : 1. Maximum DC current limited by the package
T
C
=25℃
T
C
=25℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
T
J,
T
STG
Value
55
+20
110
420
125
0.83
470
-55 to +175
Units
V
V
A
A
W
mJ
℃
Thermal Characteristics
Parameter
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Symbol
R
qJC
R
qJA
Value
1.2
62.5
Units
℃/W
℃/W
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN、FUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV. 1, 11-May-2012
PAGE.1
HY110N06T
Electrical Characteristics ( T
C
=25, Unless otherwise noted )
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Units
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
BV
DSS
V
GS(th)
R
DS(ON)
I
DSS
I
GSS
V
GS
=0V、I
D
=250uA
V
DS
=V
GS
、I
D
=250uA
V
GS
=10V、I
D
=30A
V
DS
=44V、V
GS
=0V
V
GS
=+20V、V
DS
=0V
55
1
-
-
-
-
1.6
4.2
-
-
-
3
5.5
1
100
V
V
mW
uA
nA
Zero Gate Voltage Drain Current
Gate Body Leakage Current
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Rg
V
DS
=30V，V
GS
=0V
f=1.0MH
Z
V
DD
=30V，I
D
=30A
V
GS
=10V，R
G
=3.6W
V
DS
=30V，I
D
=30A
V
GS
=10V
-
-
-
-
-
-
-
-
-
-
-
98
37.6
26.2
21.8
12.6
68
58
4150
385
260
1.3
-
-
-
-
-
ns
-
-
-
-
-
-
W
pF
nC
Source-Drain Diode
Max. Diode Forwad Voltage
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
V
SD
t
rr
Q
rr
-
I
S
=30A、V
GS
=0V
V
GS
=0V、I
S
=30A
di/dt=100A/us
-
-
-
-
-
0.85
52
128
110
1.4
-
-
A
V
ns
uC
NOTE :
Pulse Test : Pulse Width
≦
300us, duty cycle
≦
2%
REV. 1, 11-May-2012
PAGE.2
HY110N06T
Typical Characteristics Curves ( T
C
=25℃, unless otherwise noted)
200
I
D
- Drain-to-Source Current (A)
7
10V
R
DS(ON)
- On Resistance(mW)
V
GS
=7.0V
6.5V
180
160
140
120
100
80
60
40
20
0
0
6
6.0V
5
V
GS
=10V
5.5V
5.0V
4
3
5
10
15
20
0
20
40
60
80
100
V
DS
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
Fig.1 Output Characteristric
12
R
DS(ON)
- On Resistance(mW)
10
8
6
4
2
0
5
6
7
8
9
10
V
GS
- Gate-to-Source Voltage (V)
R
DS(ON)
- On-Resistance
(Normalized)
2
Fig.2 On-Resistance vs Drain Current
V
GS
=10 V
I
D
=30A
I
D
=30A
1.8
1.6
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100 125 150 175
T
J
- Junction Temperature (
o
C)
Fig.3 On-Resistance vs Gate to Source Voltage
6000
5000
f = 1MHz
V
GS
= 0V
Fig.4 On-Resistance vs Junction Temperature
12
V
GS
- Gate-to-Source Voltage (V)
10
8
6
4
2
0
C - Capacitance (pF)
Ciss
4000
3000
2000
V
DS
=30V
I
D
=30A
Coss
1000
0
Crss
0
5
10
15
20
25
30
0
20
40
60
80
100
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Gate Charge (nC)
Fig.5 Capacitance Characteristic
REV. 1, 11-May-2012
Fig.6 Gate Charge Characteristic
PAGE.3
HY110N06T
Typical Characteristics Curves ( T
C
=25℃, unless otherwise noted)
140
120
Power Rating
100
80
60
40
20
0
0
25
50
75
100
125
150
175
200
T
J
- Junction Temperature (
o
C)
1.2
BV
DSS
- Breakdown Voltage
(Normalized)
I
D
= 250mA
1.1
1
0.9
0.8
-50
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (
o
C)
Fig.7 Power Derating Curve
1000
Fig.8 Breakdown Voltage vs Junction Temperature
V
GS
= 0V
I
S
- Source Current (A)
100
10
T
J
= 125
o
C
25
o
C
1
-55
o
C
0.1
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
Fig.9 Body Diode Forward Voltage Characteristic
REV. 1, 11-May-2012
PAGE.4
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