TSOP52..
Not for new designs
Vishay Semiconductors
IR Receiver Module for PCM Remote Control Systems
Available Types For Different Carrier Frequencies
Type
TSOP5230
TSOP5236
TSOP5238
TSOP5256
fo
30 kHz
36 kHz
38 kHz
56 kHz
Type
TSOP5233
TSOP5237
TSOP5240
fo
33.0 kHz
36.7 kHz
40.0 kHz
Description
The TSOP52.. – series are miniaturized SMD–IR
Receiver Modules for infrared remote control systems.
PIN diode and preamplifier are assembled on lead
frame, the epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. TSOP52.. is the
standard IR remote control SMD–Receiver series,
supporting all major transmission codes.
16797
Features
D
Photo detector and preamplifier in one package
D
Internal filter for PCM frequency
D
Continuous data transmission possible
D
TTL and CMOS compatibility
D
Output active low
D
Low power consumption
D
High immunity against ambient light
D
Suitable burst length
y10
cycles/burst
D
Taping available for topview and sideview
assembly
Block Diagramm
4
Input
Control
Circuit
V
S
30 kW
3
OUT
PIN
AGC
Band
Pass
Demodu-
lator
1
GND
16798
Document Number 82154
Rev. 2, 05–Nov–01
www.vishay.com
1 (10)
TSOP52..
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25°C
Parameter
Supply Voltage
Supply Current
Output Voltage
Output Current
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Power Consumption
Test Conditions
Pin 4
Pin 4
Pin 3
Pin 3
Symbol
V
S
I
S
V
O
I
O
T
j
T
stg
T
amb
P
tot
Value
–0.3...6.0
5
–0.3...6.0
15
100
–40...+85
–25...+85
50
Unit
V
mA
V
mA
°C
°C
°C
mW
Not for new designs
T
amb
x
85°C
Basic Characteristics
T
amb
= 25°C
Parameter
Supply Current
Supply Current
Supply Voltage
Transmission Distance
Test Conditions
V
S
= 5 V, E
v
= 0
V
S
= 5 V, E
v
= 40 klx, sunlight
Symbol
I
SD
I
SH
VS
d
V
OSL
E
e min
E
e min
E
e max
ϕ
1/2
30
±50
Min.
0.8
4.5
30
250
0.6
0.7
Typ.
1.1
1.4
Max.
1.5
5.5
Unit
mA
mA
V
m
mV
mW/m
2
mW/m
2
W/m
2
deg
E
v
= 0, test signal see fig.7,
IR diode TSAL6200, I
F
= 400 mA
Output Voltage Low (Pin 3) I
OSL
= 0.5 mA,E
e
= 0.7 mW/m
2
Irradiance (30–40 kHz)
Pulse width tolerance:
t
pi
– 5/f
o
< t
po
< t
pi
+ 6/f
o
,
Irradiance (56 kHz)
test signal see fig.7
Irradiance
t
pi
– 5/f
o
< t
po
< t
pi
+ 6/f
o
Directivity
Angle of half transmission distance
0.5
0.6
Application Circuit
100
W
*)
4
TSOP52..
TSAL62..
3
2
1
16633
+5V
>10 kW
optional
4.7
mF
*)
mC
GND
**)
GND
*) recommended to suppress power supply disturbances
**) the output voltage should not be hold continuously at a voltage below 3.3V by the external circuit.
www.vishay.com
2 (10)
Document Number 82154
Rev. 2, 05–Nov–01
TSOP52..
Not for new designs
Suitable Data Format
The circuit of the TSOP52.. is designed in that way that
unexpected output pulses due to noise or disturbance
signals are avoided. A bandpassfilter, an integrator
stage and an automatic gain control are used to
suppress such disturbances.
The distinguishing mark between data signal and
disturbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fullfill the following condition:
•
Carrier frequency should be close to center
frequency of the bandpass (e.g. 38 kHz).
•
Burst length should be 10 cycles/burst or longer.
•
After each burst which is between 10 cycles and
70 cycles a gap time of at least 14 cycles is
neccessary.
•
For each burst which is longer than 1.8 ms a
corresponding gap time is necessary at some
time in the data stream. This gap time should be at
least 4 times longer than the burst.
•
Up to 800 short bursts per second can be
received continuously.
Some examples for suitable data format are:
NEC Code, Toshiba Micom Format, Sharp Code,
RC5 Code, RC6 Code, R–2000 Code.
When a disturbance signal is applied to the TSOP52..
it can still receive the data signal. However the
sensitivity is reduced to that level that no unexpected
pulses will occure.
Some examples for such disturbance signals which
are suppressed by the TSOP52.. are:
•
DC light (e.g. from tungsten bulb or sunlight)
•
Continuous signal at 38 kHz or at any other
frequency
•
Signals from fluorescent lamps with electronic
ballast with low modulation
(see Figure A or Figure B).
Vishay Semiconductors
0
5
10
time [ms]
15
20
Figure A: IR Signal from Fluorescent Lamp with low Modulation
0
5
10
time [s]
15
20
Figure B: IR Signal from Fluorescent Lamp with high Modulation
Document Number 82154
Rev. 2, 05–Nov–01
www.vishay.com
3 (10)
TSOP52..
Vishay Semiconductors
Not for new designs
Typical Characteristics
(T
amb
= 25_C, unless otherwise specified)
E
e min
– Threshold Irradiance (mW/m
2
)
1.2
1.3
16802
1.0
/ E – Rel. Responsitivity
e
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5
1.0
1.5
2.0
E – Field Strength of Disturbance (kV/m)
0.8
0.6
0.4
0.2
0.0
0.7
0.8
0.9
1.0
1.1
e
E
min
f = f
0
"5%
Df
( 3dB ) = f
0
/10
94 8143
f/f
0
– Relative Frequency
Figure 1. Frequency Dependence of Responsivity
Figure 4. Threshold Irradiance vs.
Field Strength of Disturbance
E
e min
– Threshold Irradiance ( mW/m
2
)
10
f = f
0
1 kHz
1.0
0.9
t
po
– Output Pulse Length (ms)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
96 12110
Input burst duration
10 kHz
1
l
= 950 nm,
optical test signal, fig.7
100 Hz
1.0
10.0
100.0 1000.0 10000.0
94 9106
0.1
0.01
0.1
1
10
100
1000
E
e
– Irradiance ( mW/m
2
)
DV
sRMS –
AC Voltage on DC Supply Voltage (mV)
Figure 2. Sensitivity in Dark Ambient
E
e min
– Threshold Irradiance (mW/m
2
)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.01
0.10
1.00
10.00
E – DC Irradiance (W/m
2
)
100.00
Ambient,
l
= 950 nm
Correlation with ambient light sources
(Disturbanceeffect):10W/m
2
^1.4klx
(Stand.illum.A,T=2855K)^8.2klx
(Daylight,T=5900K)
Figure 5. Sensitivity vs. Supply Voltage Disturbances
E
e min
– Threshold Irradiance (mW/m
2
)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
90
Sensitivity in dark ambient
96 12111
0.0
–30 –15 0
15 30 45 60 75
96 12112
T
amb
– Ambient Temperature (
°C
)
Figure 3. Sensitivity in Bright Ambient
Figure 6. Sensitivity vs. Ambient Temperature
www.vishay.com
4 (10)
Document Number 82154
Rev. 2, 05–Nov–01
TSOP52..
Not for new designs
Optical Test Signal
E
e
(IR diode TSAL6200, I
F
= 0.4 A, 30 pulses, f = f
0
, T = 10 ms)
Vishay Semiconductors
1.0
T
on
,T – Output Pulse Length (ms)
off
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.1
1.0
10.0
100.0 1000.0 10000.0
l
= 950 nm,
optical test signal, fig.8
T
off
T
on
t
t
pi
*
T
* t
pi
w
10/fo is recommended for optimal function
Output Signal
1)
2)
16110
V
O
V
OH
V
OL
7/f
0
<
t
d
<
15/f
0
t
po
=
t
pi
"
6/f
0
t
t
d1 )
96 12114
E
e
– Irradiance (mW/m
2
)
t
po2 )
Figure 7. Output Function
S (
l
)
rel
– Relative Spectral Sensitivity
E
e
Optical Test Signal
1.2
1.0
0.8
0.6
0.4
0.2
Figure 10. Output Pulse Diagram
600
ms
T = 60 ms
600
ms
t
94 8134
V
O
V
OH
V
OL
Output Signal,
( see Fig.10 )
0
750
T
on
T
off
t
94 8408
850
950
1050
1150
l
– Wavelength ( nm )
Figure 8. Output Function
0.8
0.7
Envelope Duty Cycle
0.6
0.5
0.4
0.3
0.2
f = 38 kHz
Figure 11. Relative Spectral Sensitivity vs. Wavelength
0°
10°
20°
30°
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
16801
0.1
0.0
10
16156
20 30 40 50 60 70 80
Burstlength [number of cycles/burst]
90
0.6
0.4
0.2
0
0.2
0.4
d
rel
– Relative Transmission Distance
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
Figure 12. Directivity
Document Number 82154
Rev. 2, 05–Nov–01
www.vishay.com
5 (10)
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