SBT1020 ... SBT10100
SBT1020 ... SBT10100
Schottky Barrier Rectifier Diodes – Single Diode
Schottky-Barrier-Gleichrichterdioden – Einzeldiode
Version 2013-05-07
2.8
1.2
±0.3
±0.2
10.1
±0.3
8.7
Type
Typ
±0.3
4.5
±0.2
14.9
±0.7
Ø 3.8
±0.2
4
4
Nominal current
Nennstrom
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case – Kunststoffgehäuse
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
10 A
20...100 V
TO-220AC
1.8 g
13.9
±0.3
2.67
0.42
±0.2
3.9
1
±0.3
1
3
1.3
±0.1
±0.2
3
±0.1
0.8
5.08
±0.1
Dimensions - Maße [mm]
Maximum ratings and Characteristics
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
20
30
40
45
50
60
90
100
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RSM
[V]
20
30
40
45
50
60
90
100
T
C
= 100°C
f > 15 Hz
SBT1020... T
A
= 25°C
SBT1060
SBT1090... T
A
= 25°C
SBT10100
T
A
= 25°C
Grenz- und Kennwerte
Forward voltage
Durchlass-Spannung
V
F
[V]
1
)
I
F
= 5 A
I
F
= 10 A
< 0.55
< 0.55
< 0.55
< 0.55
< 0.70
< 0.70
< 0.85
< 0.85
10 A
30 A
1
)
135/150 A
115/125 A
80 A
2
s
T
j
T
j
-50...+150°C
≤ 200°C
< 0.48
< 0.48
< 0.48
< 0.48
< 0.63
< 0.63
< 0.78
< 0.78
I
FAV
I
FRM
I
FSM
I
FSM
i
2
t
SBT1020
SBT1030
SBT1040
SBT1045
SBT1050
SBT1060
SBT1090
SBT10100
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
in DC forward mode – bei Gleichstrom-Durchlassbetrieb
1
1
T
j
= 25°C
Max. temperature of the case T
C
= 100°C – Max. Temperatur des Gehäuses T
C
= 100°C
http://www.diotec.com/
© Diotec Semiconductor AG
1
SBT1020 ... SBT10100
Characteristics
Leakage current
Sperrstrom
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
T
j
= 25°C
T
j
= 100°C
V
R
= V
RRM
V
R
= V
RRM
I
R
I
R
R
thC
Kennwerte
< 300 µA
< 7 mA
< 3 K/W
120
[%]
100
10
2
[A]
10
SBT1020...SBT1045
80
1
SBT1050, SBT1060
60
40
10
20
I
FAV
0
0
T
C
50
100
150
[°C]
-1
SBT1080, SBT10100
I
F
10
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Temp. Des Gehäuses
-2
0
0.4
0.6
1.0
V
F
[V]
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
2
http://www.diotec.com/
© Diotec Semiconductor AG
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