SBCT1020 ... SBCT10100
SBCT1020 ... SBCT10100
Schottky Barrier Rectifier Diodes – Common Cathode
Schottky-Barrier-Gleichrichterdioden – Gemeinsame Kathode
Version 2013-05-07
2.8
±0.3
1.2
±0.2
10.1
±0.3
Nominal Current
Nennstrom
4
10 A
20...100 V
TO-220AB
2.2g
14.9
Type
Typ
8.7
±0.3
4.5
±0.2
±0.7
Ø 3.8
±0.2
4
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
Plastic case
Kunststoffgehäuse
13.9
±0.3
2.67
±0.2
3.9
±0.3
1 2 3
1.3
±0.1
±0.2
1 2 3
0.42
±0.1
0.8
Weight approx.
Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
2.54
±0.1
Dimensions - Maße [mm]
Maximum ratings
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
20
30
40
45
50
60
90
100
Surge peak reverse voltage
Stoßspitzensperrspannung
V
RSM
[V]
20
30
40
45
50
60
90
100
Grenzwerte
Forward Voltage
Durchlass-Spannung
V
F
[V]
1
)
2
)
I
F
= 5 A
I
F
= 10 A
< 0.63
< 0.63
< 0.63
< 0.63
< 0.79
< 0.79
< 0.92
< 0.92
< 0.55
< 0.55
< 0.55
< 0.55
< 0.70
< 0.70
< 0.85
< 0.85
SBCT1020
SBCT1030
SBCT1040
SBCT1045
SBCT1050
SBCT1060
SBCT1090
SBCT10100
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
1
1
2
T
j
= 25°C
Per diode − Pro Diode
Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)
http://www.diotec.com/
T
C
= 100°C
f > 15 Hz
T
A
= 25°C
T
A
= 25°C
T
j
T
S
I
FAV
I
FAV
I
FRM
I
FSM
i
2
t
5 A
1
)
10 A
2
)
20 A
2
)
100/120 A
2
)
50 A
2
s
2
)
-50...+150°C
-50...+175°C
© Diotec Semiconductor AG
1
SBCT1020 ... SBCT10100
Characteristics
Leakage current
Sperrstrom
Thermal resistance junction to case
Wärmewiderstand Sperrschicht - Gehäuse
T
j
= 25°C
T
j
= 100°C
V
R
= V
RRM
I
R
R
thC
Kennwerte
< 300 µA
1
)
< 7 mA
1
)
3.0 K/W
2
)
120
[%]
100
10
2
[A]
10
SBCT1020...SBCT1045
80
1
SBCT1050, SBCT1060
60
40
10
20
I
FAV
0
0
T
C
50
100
150
[°C]
-1
SBCT1080, SBCT10100
I
F
10
-2
T
j
= 25°C
0
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Gehäusetemperatur
0.4
0.6
1.0
V
F
[V]
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
1
2
Per diode − Pro Diode
Per device (parallel operation) − Pro Bauteil (Parallelbetrieb)
http://www.diotec.com/
© Diotec Semiconductor AG
2
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
