Radiation Hardened BiCMOS Dual SPDT Analog Switch
HS-303CEH
The HS-303CEH is an analog switch and a monolithic device
that is fabricated using Intersil’s dielectrically isolated
Radiation Hardened Silicon Gate (RSG) process technology to
insure latch-up free operation. It is pinout compatible and
functionally equivalent to the HS-303RH. This switch offers
low-resistance switching performance for analog voltages up
to the supply rails. ON-resistance is low and stays reasonably
constant over the full range of operating voltage and current.
ON-resistance also stays reasonably constant when exposed to
radiation. Break-before-make switching is controlled by 5V
digital inputs. The HS-303CEH can operate with rails of ±15V.
Features
• QML, per MIL-PRF-38535
• No latch-up, dielectrically isolated device islands
• Pinout and functionally compatible with intersil HS-303RH
series analog switches
• Analog signal range equal to the supply voltage range
• Low leakage . . . . . . . . . . . . . . . . . . . . . 150nA (max, post-rad)
• Low r
ON
. . . . . . . . . . . . . . . . . . . . . . . . . . . 60Ω (max, post-rad)
• Low standby supply current . . . . . . . ±150µA (max, post-rad)
• Radiation assurance
- High dose rate (50 to 300rad(Si)/s) . . . . . . . . 100krad(Si)
- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . 50krad(Si)*
• Single event effects
- For LET = 60MeV-mg/cm
2
at 60° incident angle,
<150pC charge transferred to the output of an off switch
* Product capability established by initial characterization. The
EH version is acceptance tested on a wafer-by-wafer basis to
50krad(Si) at low dose rate.
Specifications
The Detailed Electrical Specifications for the HS-303CEH is
contained in SMD
5962-95813.
A “hot-link” is provided from
our website for downloading.
NEGATIVE SWITCH VOLTAGE (V
SW-
)
S
16
14
12
10
8
6
4
2
0
10
11
12
13
14
15
IN
N
P
D
FIGURE 1. LOGIC CIRCUIT
TABLE 1. TRUTH TABLE
LOGIC
0
1
SW1 AND SW2
OFF
ON
SW3 AND SW4
ON
OFF
NEGATIVE SUPPLY VOLTAGE (V
EE-
)
FIGURE 2. RECOMMENDED OPERATING AREA IN GREY
April 19, 2013
FN8399.1
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Copyright Intersil Americas LLC 2013. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
HS-303CEH
Pin Configuration
HS-303CEH
(14 LD FLATPACK)
TOP VIEW
1
NC
2
S3
3
D3
4
D1
5
S1
6
IN1
7
GND
8
V-
9
IN2
10
11
D2
S2
12
D4
13
S4
14
V+
Pin Descriptions
PIN NUMBER
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PIN NAME
NC
S3
D3
D1
S1
IN1
GND
V-
IN2
S2
D2
D4
S4
V+
Not Electrically Connected
Analog Switch: Source connection
Analog Switch: Drain Connection
Analog Switch: Drain Connection
Analog Switch: Source connection
Digital Control Input for SW1 and SW3
Ground
Negative Power Supply
Digital Control Input for SW2 and SW4
Analog Switch: Source connection
Analog Switch: Drain Connection
Analog Switch: Drain Connection
Analog Switch: Source connection
Positive Power Supply
PIN DESCRIPTION
Ordering Information
ORDER
NUMBER
5962R9581308VXC
5962R9581308V9A
HS9-303CEH/PROTO
HS0-303CEH/SAMPLE
PART
NUMBER
HS9-303CEH-Q
HS0-303CEH-Q
HS9-303CEH/PROTO
HS0-303CEH/SAMPLE
TEMP. RANGE
(°C)
-55 to +125
-55 to +125
-55 to +125
-55 to +125
PACKAGE
(Pb-free)
14 Ld Flatpack
Die
14 Ld Flatpack
Die
PKG.
DWG. #
K14.A
N/A
K14.A
N/A
NOTE: These Intersil Pb-free Hermetic packaged products employ 100% Au plate - e4 termination finish, which is RoHS compliant and compatible with
both SnPb and Pb-free soldering operations.
2
FN8399.1
April 19, 2013
HS-303CEH
Absolute Maximum Ratings
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
±V
SUPPLY
to Ground (V+, V-) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .±17.5V
Analog Input Voltage
(+V
S
). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+V
SUPPLY
+1.5V
(-V
S
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -V
SUPPLY
-1.5V
Digital Input Voltage
(+V
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +V
SUPPLY
+4V
(-V
A
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -V
SUPPLY
-4V
Peak Current (S or D)
(Pulse at 1ms, 10% Duty Cycle Max) . . . . . . . . . . . . . . . . . . . . . . . . 40mA
Continuous Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Thermal Information
Thermal Resistance (Typical)
θ
JA
(°C/W)
θ
JC
(°C/W)
Flatpack Package (Notes 1, 2) . . . . . . . . . .
105
17
Package Power Dissipation at 125°C
Flatpack Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.48W/°C
Lead Temperature (Soldering, 10s) . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C
Junction Temperature (T
J
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175°C
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Recommended Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . .-55°C to +125°C
Operating Supply Voltage Range (±V
SUPPLY
) . . . . . . . . . . . . . . . . . . . . ±15V
Analog Input Voltage (V
S
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±V
SUPPLY
Logic Low Level (V
AL
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0V to 0.8V
Logic High Level (V
AH
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.0V to +V
SUPPLY
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
1.
θ
JA
is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief
TB379
for details.
2. For
θ
JC
, the “case temp” location is the center of the package underside.
-55°C to +125°C
.
SYMBOL
+r
DS(ON)
-r
DS(ON)
+I
S(OFF)
-I
S(OFF)
+I
D(OFF)
-I
D(OFF)
+I
D(ON)
-I
D(ON)
I
AL
I
AH
I+
Electrical Specifications
V
SUPPLY
= ±15V unless otherwise specified. Boldface limits apply across the operating temperature range,
MIN
(Note 5)
MAX
(Note 5)
75
75
150
20
0.5
150
20
0.05
150
20
0.5
150
20
-0.1
0.01
0.03
0.03
45
0.15
-0.1
-0.1
100
100
1000
1000
150
0.6
-100
-100
28
10
PARAMETER
“Switch On” Resistance
“Switch On” Resistance
Leakage Current into Source of an “OFF” Switch
TEST CONDITIONS
V
D
= 10V, I
S
= -10mA
V
D
= -10V, I
S
= 10mA
V
S
= +14V, V
D
= -14V
V
S
= +15V, V
D
= -15V
V
S
= -14V, V
D
= +14V
V
S
= -15V, V
D
= +15V
V
S
= +14V, V
D
= -14V
V
S
= +15V, V
D
= -15V
V
S
= -14V, V
D
= +14V
V
S
= -15V, V
D
= +15V
V
S
= +14V, V
D
= +14V
V
S
= -14V, V
D
= -14V
All Channels V
A
= 0.8V
All Channels V
A
= 4.0V
All Channels V
A
= 0.8V
V
A1
= 0V, V
A2
= 4V
V
A1
= 4V, V
A2
= 0V
TYP
35
35
UNITS
Ω
Ω
nA
µA
nA
µA
nA
µA
nA
µA
nA
nA
nA
nA
µA
mA
µA
µA
pF
pF
-150
-20
-150
-20
-150
-20
-150
-20
-100
-100
-1000
-1000
0.05
Leakage Current into Source of an “OFF” Switch
Leakage Current into Drain of an “OFF” Switch
Leakage Current into Drain of an “OFF” Switch
Leakage Current from an “ON” Driver into the
Switch (Drain and Source)
Leakage Current from an “ON” Driver into the
Switch (Drain and Source)
Low Level Input Address Current
High Level Input Address Current
Positive Supply Current
I-
Negative Supply Current
All Channels V
A
= 0.8V
V
A1
= 0V, V
A2
= 4V
V
A1
= 4V, V
A2
= 0V
CIS(OFF)
CC1
Switch Input Capacitance
Driver Input Capacitance
From Source to GND (Notes 3, 4)
V
A
= 0V (Notes 3, 4)
3
FN8399.1
April 19, 2013
HS-303CEH
-55°C to +125°C
. (Continued)
SYMBOL
CC2
COS
V
ISO
V
CR
V
CTE
t
OPEN
t
ON
t
OFF
NOTES:
3. Limits established by characterization and are not production tested.
4. VAL = 0V and VAH = 4V.
5. Parameters with MIN and/or MAX limits are 100% tested at +25°C, unless otherwise specified. Temperature limits established by characterization
and are not production tested.
Electrical Specifications
V
SUPPLY
= ±15V unless otherwise specified. Boldface limits apply across the operating temperature range,
MIN
(Note 5)
MAX
(Note 5)
10
28
40
40
15
10
50
250
200
300
500
450
PARAMETER
Driver Input Capacitance
Switch Output
Off Isolation
Cross Talk
Charge Transfer Error
Break-Before-Make Time Delay
Switch Turn “ON” Time
Switch Turn “OFF” Time
TEST CONDITIONS
V
A
= 15V (Notes 3, 4)
Measured Drain to GND (Notes 3, 4)
V
GEN
= 1V
p-p
, f = 1MHz (Notes 3, 4)
V
GEN
= 1V
p-p
, f = 1MHz (Notes 3, 4)
V
S
= GND, C
L
= 0.01µF (Notes 3, 4)
R
L
= 300Ω, V
S
= 3V, V
AH
= 5V, V
AL
= 0V
R
L
= 300Ω, V
S
= 3V, V
AH
= 4V, V
AL
= 0V
R
L
= 300Ω, V
S
= 3V, V
AH
= 4V, V
AL
= 0V
TYP
UNITS
pF
pF
dB
dB
mV
ns
ns
ns
Post Radiation Characteristics
V
SUPPLY
= ±15V unless otherwise specified. This data is typical test data post radiation exposure at a
rate of 50 to 300rad(Si)/s. This data is intended to show typical parameter shifts due to total ionizing dose (high dose radiation) T
A
= +25°C.
SYMBOL
+r
DS(ON)
-r
DS(ON)
+I
S(OFF)
-I
S(OFF)
+I
D(OFF)
-I
D(OFF)
+I
D(ON)
-I
D(ON)
I
AL
I
AH
I+
“Switch On” Resistance
“Switch On” Resistance
Leakage Current into Source of an “OFF” Switch
PARAMETER
TEST CONDITIONS
V
D
= 10V, I
S
= -10mA
V
D
= -10V, I
S
= 10mA
V
S
= +14V, V
D
= -14V
V
S
= +15V, V
D
= -15V
Leakage Current into Source of an “OFF” Switch
V
S
= -14V, V
D
= +14V
V
S
= -15V, V
D
= +15V
Leakage Current into Drain of an “OFF” Switch
V
S
= +14V, V
D
= -14V
V
S
= +15V, V
D
= -15V
Leakage Current into Drain of an “OFF” Switch
V
S
= -14V, V
D
= +14V
V
S
= -15V, V
D
= +15V
Leakage Current from an “ON” Driver into the Switch (Drain
and Source)
Leakage Current from an “ON” Driver into the Switch (Drain
and Source)
Low Level Input Address Current
High Level Input Address Current
Positive Supply Current
V
S
= +14V, V
D
= +14V
V
S
= -14V, V
D
= -14V
All Channels V
A
= 0.8V
All Channels V
A
= 4.0V
All Channels V
A
= 0.8V
V
A1
= 0V, V
A2
= 4V
V
A1
= 4V, V
A2
= 0V
I-
Negative Supply Current
All Channels V
A
= 0.8V
V
A1
= 0V, V
A2
= 4V
V
A1
= 4V, V
A2
= 0V
t
OPEN
t
ON
t
OFF
Break-Before-Make Time Delay
Switch Turn “ON” Time
Switch Turn “OFF” Time
R
L
= 300Ω, V
S
= 3V, V
AH
= 5V, V
AL
= 0V
R
L
= 300Ω, V
S
= 3V, V
AH
= 4V, V
AL
= 0V
R
L
= 300Ω, V
S
= 3V, V
AH
= 4V, V
AL
= 0V
0k
34
28
-0.20
-0.003
0.30
0.001
-1.20
-0.001
0.31
0.0003
-0.2
0.15
0.35
1.98
55
167.2
-0.01
-0.01
42
224
192
100k
35
29
-0.31
-0.47
0.84
0.02
-0.90
-0.001
0.90
0.001
-0.55
0.28
0.25
1.47
53
113.7
-0.01
-0.02
47
213
173
UNITS
Ω
Ω
nA
µA
nA
µA
nA
µA
nA
µA
nA
nA
nA
nA
µA
µA
µA
µA
ns
ns
ns
4
FN8399.1
April 19, 2013
HS-303CEH
Post Radiation Characteristics
V
SUPPLY
= ±15V unless otherwise specified. This data is typical test data post radiation exposure
at a rate of <10mrad(Si)/s. This data is intended to show typical parameter shifts due to total ionizing dose (low dose radiation). T
A
= +25°C.
SYMBOL
+r
DS(ON)
-r
DS(ON)
+I
S(OFF)
-I
S(OFF)
+I
D(OFF)
-I
D(OFF)
+I
D(ON)
-I
D(ON)
I
AL
I
AH
I+
PARAMETER
“Switch On” Resistance
“Switch On” Resistance
Leakage Current into Source of an
“OFF” Switch
Leakage Current into Source of an
“OFF” Switch
TEST CONDITIONS
V
D
= 10V, I
S
= -10mA
V
D
= -10V, I
S
= 10mA
V
S
= +14V, V
D
= -14V
V
S
= +15V, V
D
= -15V
V
S
= -14V, V
D
= +14V
V
S
= -15V, V
D
= +15V
0k
33.57
27.56
-0.30
-0.006
0.32
0.004
-0.36
-0.001
0.34
0.0004
-0.25
0.17
0.19
1.72
54
185
-0.011
-0.013
42.58
221.03
188.62
25k
34.39
28.37
-0.26
-0.002
0.45
0.003
-0.22
-0.001
0.43
50k
34.37
28.48
-0.36
-0.002
0.75
0.003
-0.25
-0.001
0.69
75k
34.75
28.92
-0.55
-0.003
1.05
0.003
-0.46
-0.001
1.02
100k
34.65
28.77
-0.47
-0.002
0.94
0.002
-0.40
-0.002
0.92
UNITS
Ω
Ω
nA
µA
nA
µA
nA
µA
nA
µA
nA
nA
nA
nA
µA
µA
µA
µA
ns
ns
ns
Leakage Current into Drain of an “OFF” V
S
= +14V, V
D
= -14V
Switch
V
S
= +15V, V
D
= -15V
Leakage Current into Drain of an “OFF” V
S
= -14V, V
D
= +14V
Switch
V
S
= -15V, V
D
= +15V
Leakage Current from an “ON” Driver
into the Switch (Drain and Source)
Leakage Current from an “ON” Driver
into the Switch (Drain and Source)
Low Level Input Address Current
High Level Input Address Current
Positive Supply Current
V
S
= +14V, V
D
= +14V
V
S
= -14V, V
D
= -14V
All Channels V
A
= 0.8V
All Channels V
A
= 4.0V
All Channels V
A
= 0.8V
V
A1
= 0V, V
A2
= 4V
V
A1
= 4V, V
A2
= 0V
0.0008 0.0011 0.0014 0.0018
-0.26
0.15
0.30
0.87
51
146
-0.015
-0.016
50.84
-0.36
0.26
0.23
0.83
50
129
-0.011
-0.017
55.63
-0.55
0.45
0.71
0.28
49
116
-0.019
-0.019
56.74
-0.65
0.40
0.48
1.31
50
106
-0.022
-0.014
58.06
I-
Negative Supply Current
All Channels V
A
= 0.8V
V
A1
= 0V, V
A2
= 4V
V
A1
= 4V, V
A2
= 0V
t
OPEN
t
ON
t
OFF
Break-Before-Make Time Delay
Switch Turn “ON” Time
Switch Turn “OFF” Time
R
L
= 300Ω, V
S
= 3V, V
AH
= 5V, V
AL
= 0V
R
L
= 300Ω, V
S
= 3V, V
AH
= 4V, V
AL
= 0V
R
L
= 300Ω, V
S
= 3V, V
AH
= 4V, V
AL
= 0V
229.24 240.85 249.79 256.37
184.65 182.27 184.06 182.45
5
FN8399.1
April 19, 2013
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