Radiation Hardened Programmable Low Power Op
Amps
HS-3530ARH, HS-3530AEH
The HS-3530ARH, HS-3530AEH are Low Power Operational
Amplifiers, which are internally compensated monolithic
devices offering a wide range of performance specifications.
Parameters such as power dissipation, slew rate, bandwidth,
noise and input DC parameters are programmed by selecting
an external resistor or current source. Supply voltages as low
as ±3V may be used with little degradation of AC performance.
The HS-3530ARH, HS-3530AEH have been specifically
designed to meet exposure to space radiation environments.
Operation from -55°C to +125°C is guaranteed.
A major advantage of the HS-3530ARH, HS-3530AEH is that
operating characteristics remain virtually constant over a wide
supply range (±3V to
±15V),
allowing the amplifiers to offer
maximum performance in almost any system, including
battery operated equipment. A primary application for these
devices is in active filtering and conditioning for a wide variety
of signals that differ in frequency and amplitude. Also, by
modulating the set current, they can be used for designs such
as current controlled oscillators/modulators, sample and hold
circuits and variable active filters.
Features
• Radiation Performance
- Gamma Dose . . . . . . . . . . . . . . . . . . . . . . . . 3 x 10
5
RAD(Si)
- SEL . . . . . . . . . . . . . . . . . . . . . . . . Immune (RSG DI Process)
- Low dose rate . . . . . . . . . . . . . . . . . . . . . . . . . . 100krad(Si)*
*Product capability established by initial characterization. The EH
version is acceptance tested on a wafer by wafer basis to
50krad(Si) at low dose rate.
• Wide Range AC Programming
- Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . 0.025 to 0.1V/µs
- Gain X Bandwidth . . . . . . . . . . . . . . . . . . 30kHz to 750kHz
• Wide Range DC Programming
- Power Supply Range . . . . . . . . . . . . . . . . . . .
±3.0V
to
±15V
• Supply Current . . . . . . . . . . . . . . . . . . . . . . . . . 15µA to 150µA
• Output Current . . . . . . . . . . . . . . . . . . . . . . . 0.25mA to 2.5mA
• Quiescent Power . . . . . . . . . . . . . . . . . . . . . . . . . 4.8mW (Max)
• Dielectrically Isolated Device Islands
• Short Circuit Protection
• Full -55°C to +125°C Military Temperature Range
Specifications
Specifications for Rad Hard QML devices are controlled by the
Defense Logistics Agency Land and Maritime (DLA). The SMD
numbers listed below must be used when ordering.
Detailed Electrical Specifications for the HS-3530ARH,
HS-3530AEH are contained in SMD
5962-95687.
A “hot-link”
to the DLA website is also provided on the Product Information
page for downloading the document.
www.intersil.com/products/deviceinfo.asp?pn=HS-3530ARH
The Intersil Quality Management Plan, listing all screening
operations, is available on our website.
www.intersil.com/design/quality/manuals.asp
Pin Configurations
HS2-3530ARH (CAN), MACY1-X8
TOP VIEW
I
SET
8
OFFSET
NULL
INVERTING
INPUT
2
1
7
V+
6
OUTPUT
NON-INVERTING
INPUT
3
4
V-
5
OFFSET
NULL
Ordering Information
ORDERING
NUMBER
5962F9568701QGA
5962F9568701VGA
5962F9568702VGA
5962F9568701VXC
5962F9568702VXC
5962F9568701V9A
5962F9568702V9A
PART
NUMBER
HS2-3530ARH-8
HS2-3530ARH-Q
HS2-3530AEH-Q
HS9-3530ARH-Q
HS9-3530AEH-Q
HS0-3530ARH-Q
HS0-3530AEH-Q
TEMP.
RANGE (°C)
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
-55 to +125
NC
OFFSET
- IN
+ IN
V-
1
2
3
4
5
HS9-3530ARH, HS9-3530AEH(FLATPACK), CDFP3-F10
TOP VIEW
10
9
8
7
6
I
SET
V+
OUTPUT
OFFSET
NC
HS2-3530ARH/PROTO HS2-3530ARH/Proto
HS9-3530ARH/PROTO HS9-3530ARH/Proto
December 12, 2012
FN4653.1
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Copyright Intersil Americas Inc. 1999, 2012. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
HS-3530ARH, HS-3530AEH
Die Characteristics
DIE DIMENSIONS:
1720µm x 1390µm x 533µm
±25.4µm
(68 mils x 55 mils x 21 mils
±1
mil)
ASSEMBLY RELATED INFORMATION
SUBSTRATE POTENTIAL:
Unbiased (DI)
ADDITIONAL INFORMATION
WORST CASE CURRENT DENSITY:
<2.0 x 10
5
A/cm
2
INTERFACE MATERIALS
GLASSIVATION
Type: Silox (SiO
2
)
Thickness: 8.0kA
±1.0kA
TRANSISTOR COUNT:
49
TOP METALLIZATION
Type: AlSiCu
Thickness: 16.0kA
±2kA
SUBSTRATE:
Radiation Hardened Silicon Gate,
Dielectric Isolation
BACKSIDE FINISH:
Silicon
Metallization Mask Layout
IN+
(3)
Pin Numbers shown are for the Can Package
HS-3530ARH, HS-3530AEH
IN-
(2)
OFFSET
(1)
NC
V- (4)
NC
I
SET
(8)
NC
OFFSET (5)
OUTPUT (6)
NC
V+ (7)
For additional products, see
www.intersil.com/product_tree
Intersil products are manufactured, assembled and tested utilizing ISO9000 quality systems as noted
in the quality certifications found at
www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see
www.intersil.com
2
FN4653.1
December 12, 2012
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