FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
February 2011
FOD3182
3A Output Current, High Speed MOSFET Gate Driver
Optocoupler
Features
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High noise immunity characterized by 50kV/µs (Typ.)
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Applications
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common mode rejection @ V
CM
= 2,000V
Guaranteed operating temperature range of
-40°C to +100°C
3A peak output current
Fast switching speed
– 210ns max. propagation delay
– 65ns max pulse width distortion
Fast output rise/fall time
– Offers lower dynamic power dissipation
250kHz maximum switching speed
Wide V
DD
operating range: 10V to 30V
Use of P-Channel MOSFETs at output stage
enables output voltage swing close to the supply rail
(rail-to-rail output)
5000Vrms, 1 minute isolation
Under voltage lockout protection (UVLO) with
hysteresis – optimized for driving MOSFETs
Minimum creepage distance of 8.0mm
Minimum clearance distance of 10mm to 16mm
(option TV or TSV)
Minimum insulation thickness of 0.5mm
UL and VDE*
1,414 peak working insulation voltage (V
IORM
)
Plasma Display Panel
High performance DC/DC convertor
High performance switch mode power supply
High performance uninterruptible power supply
Isolated Power MOSFET gate drive
Description
The FOD3182 is a 3A Output Current, High Speed
MOSFET Gate Drive Optocoupler. It consists of a
aluminium gallium arsenide (AlGaAs) light emitting diode
optically coupled to a CMOS detector with PMOS and
NMOS output power transistors integrated circuit power
stage. It is ideally suited for high frequency driving of
power MOSFETS used in Plasma Display Panels
(PDPs), motor control inverter applications and high
performance DC/DC converters.
The device is packaged in an 8-pin dual in-line housing
compatible with 260°C reflow processes for lead free
solder compliance.
*Requires ‘V’ ordering option
Functional Block Diagram
Package Outlines
NC
1
8
V
DD
8
8
1
1
ANODE
2
7
V
O2
6
V
O1
CATHODE
3
NC
4
5
V
SS
8
8
1
1
Note:
A 0.1µF bypass capacitor must be connected between pins 5 and 8.
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
www.fairchildsemi.com
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Truth Table
LED
Off
On
On
On
V
DD
– V
SS
“Positive Going”
(Turn-on)
0V to 30V
0V to 7.4V
7.4V to 9V
9V to 30V
V
DD
– V
SS
“Negative Going”
(Turn-off)
0V to 30V
0V to 7V
7V to 8.5V
8.5V to 30V
V
O
Low
Low
Transition
High
Pin Definitions
Pin #
1
2
3
4
5
6
7
8
Name
NC
Anode
Cathode
NC
V
SS
V
O2
V
O1
V
DD
Not Connected
LED Anode
LED Cathode
Not Connected
Negative Supply Voltage
Description
Output Voltage 2 (internally connected to V
O1
)
Output Voltage 1
Positive Supply Voltage
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
www.fairchildsemi.com
2
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-2. This optocoupler is suitable for “safe electrical insulation” only within the safety
limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Installation Classifications per DIN VDE 0110/1.89 Table 1
For Rated Mains Voltage < 150Vrms
For Rated Mains Voltage < 300Vrms
For Rated Mains Voltage < 450Vrms
For Rated Mains Voltage < 600Vrms
For Rated Mains Voltage < 1000Vrms (Option T, TS)
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Min.
Typ.
I–IV
I–IV
I–III
I–III
I–III
40/100/21
2
Max.
Unit
CTI
V
PR
Comparative Tracking Index
Input to Output Test Voltage, Method b,
V
IORM
x 1.875 = V
PR
, 100% Production Test with
tm = 1 sec., Partial Discharge < 5pC
Input to Output Test Voltage, Method a,
V
IORM
x 1.5 = V
PR
, Type and Sample Test with
tm = 60 sec.,Partial Discharge < 5 pC
175
2651
2121
V
IORM
V
IOTM
Max Working Insulation Voltage
Highest Allowable Over Voltage
External Creepage
External Clearance
External Clearance (for Option T or TS - 0.4” Lead Spacing)
Insulation Thickness
Safety Limit Values – Maximum Values Allowed in the
Event of a Failure
1,414
6000
8
7.4
10.16
0.5
V
peak
V
peak
mm
mm
mm
mm
T
Case
I
S,INPUT
P
S,OUTPUT
R
IO
Case Temperature
Input Current
Output Power (Duty Factor
≤
2.7%)
Insulation Resistance at T
S
, V
IO
= 500V
150
25
250
10
9
°C
mA
mW
Ω
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
www.fairchildsemi.com
3
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
T
STG
T
OPR
T
J
T
SOL
I
F(AVG)
I
F(tr, tf)
V
R
I
OH(PEAK)
I
OL(PEAK)
V
DD
– V
SS
V
O(PEAK)
P
O
P
D
Parameter
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature – Wave solder
(Refer to Reflow Temperature Profile, pg. 22)
Average Input Current
(1)
LED Current Minimum Rate of Rise/Fall
Reverse Input Voltage
“High” Peak Output Current
(2)
“Low” Peak Output Current
(2)
Supply Voltage
Output Voltage
Output Power Dissipation
(4)
Total Power Dissipation
(5)
Value
-40 to +125
-40 to +100
-40 to +125
260 for 10 sec.
25
250
5
3
3
-0.5 to 35
0 to V
DD
250
295
Units
°C
°C
°C
°C
mA
ns
V
A
A
V
V
mW
mW
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol
V
DD
– V
SS
I
F(ON)
V
F(OFF)
Parameter
Power Supply
Input Current (ON)
Input Voltage (OFF)
Value
10 to 30
10 to 16
-3.0 to 0.8
Units
V
mA
V
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
www.fairchildsemi.com
4
FOD3182 — 3A Output Current, High Speed MOSFET Gate Driver Optocoupler
Electrical-Optical Characteristics (DC)
Apply over all recommended conditions, typical value is measured at V
DD
= 30V, V
SS
= 0V, T
A
= 25°C,
unless otherwise specified.
Symbol
I
OH
I
OL
V
OH
V
OL
I
DDH
I
DDL
I
FLH
V
FHL
V
F
∆V
F
/ T
A
V
UVLO+
V
UVLO–
Parameter
High Level Output Current
Low Level Output Current
High Level Output Voltage
(5)(6)
Low Level Output Voltage
(5)(6)
High Level Supply Current
Low Level Supply Current
Threshold Input Current Low to
High
Input Forward Voltage
Temperature Coefficient of Forward
Voltage
UVLO Threshold
Test Conditions
V
OH
= (V
DD
– V
SS
– 1V)
V
OH
= (V
DD
– V
SS
– 6V)
V
OL
= (V
DD
– V
SS
+ 1V)
V
OL
= (V
DD
– V
SS
+ 6V)
I
O
= -100mA
I
O
= 100mA
Output Open,
I
F
= 10 to 16mA
Output Open,
V
F
= -3.0 to 0.8V
I
O
= 0mA, V
O
> 5V
Min.
0.5
2.5
0.5
2.5
V
DD
– 0.5
Typ.
0.9
1
Max.
Unit
A
A
V
V
SS
+ 0.5
2.6
2.5
3.0
0.8
1.1
1.43
-1.5
7
6.5
5
25
8.3
7.7
0.6
9
8.5
1.8
4.0
4.0
7.5
V
mA
mA
mA
V
V
mV/°C
V
V
V
V
pF
Threshold Input Voltage High to Low I
O
= 0mA, V
O
< 5V
I
F
= 10mA
I
F
= 10mA
V
O
> 5V, I
F
= 10mA
V
O
< 5V, I
F
= 10mA
Input Reverse Breakdown Voltage
Input Capacitance
I
R
= 10µA
f = 1MHz, V
F
= 0V
UVLO
HYST
UVLO Hysteresis
BV
R
C
IN
©2010 Fairchild Semiconductor Corporation
FOD3182 Rev. 1.0.9
www.fairchildsemi.com
5
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