MwT-H9
AlGaAs/InGaAs PHEMT
DOWNLOAD ADDITIONAL DATA
WWW.MWTINC.COM
75
All Dimensions in Microns
67
292
98
FEATURES
•
+27 dBm OUTPUT POWER AT 12 GHz
•
10 dB SMALL SIGNAL GAIN AT 12 GHz
•
0.3 MICRON REFRACTORY METAL/GOLD GATE
•
750 MICRON GATE WIDTH
•
CHOICE OF CHIP AND THREE PACKAGE TYPES
97
75
419
97
CHIP THICKNESS = 125
DESCRIPTION
The MwT-H9 is a AlGaAs/InGaAs PHEMT device whose nominal quarter-micron gate length and 750 micron gate width make it ideally
suited to applications requiring high-gain in the 500 MHz to 26 GHz frequency range with a 0.5W power output while exhibiting low noise
figure. The chip is produced using MwT’s reliable metal system and all devices are screened to insure reliability. All chips are passivated
using MwT’s patented “Diamond-Like Carbon” process for increased durability, Designers can use MwT’s unique BIN selection feature to
choose devices from narrow Idss ranges, insuring consistent circuit operation.
DC SPECIFICATIONS AT Ta = 25
°
C
SYMBOL
PARAM. & CONDITIONS
UNITS
MIN
TYP
MAX
RF SPECIFICATIONS AT Ta = 25
°
C
SYMBOL
PARAMETERS AND CONDITIONS
FREQ
UNITS
MIN
TYP
IDSS
Gm
Vp
BVGSO
BVGDO
Rth
Saturated Drain Current
Vds= 4.0 V VGS= 0.0 V
Transconductance
Vds= 2.0 V VGS= 0.0 V
Pinch-off Voltage
Vds= 3.0 V IDS= 5.0 mA
Gate-to-Source Breakdown Volt.
Igs= -0.5 mA
Gate-to-Drain Breakdown Volt.
Igd= -0.5 mA
Thermal
Resistance
mA
mS
V
V
V
126
120
210
160
-1.2
282
P1dB
SSG
Output Power at 1 dB Compression
VDS= 6.0 V Idss= 0.8 IDS=170mA
Small Signal Gain
VDS= 6.0 V Idss= 0.8 IDS=170mA
Power Added Efficiency
VDS= 6.0 V Idss= 0.8 IDS=170mA
Output Power at 1dB Compression
VDS= 6.0 V Idss= 0.8 IDS=170mA
Recommended IDSS Range
for Optimum P1dB
12 GHz
12 GHz
12 GHz
12 GHz
dBm
dB
%
dBm
mA
26.0
9.0
35
27.0
10.0
45
27.8
162-
258
-3.0
PAE
Pmax
-6.0
-8.0
-12.0
-12.0
70
175*
Idss
MwT-H9 Chip, H971
°
C/W
MwT-H970, H973
*Overall Rth depends on case mounting.
DEVICE EQUIVALENT CIRCUIT MODEL
Lg
GATE
PARAMETER
Rd
Rds
Cds
Cpd
Ld
DRAIN
VALUE
Rs
Ls
Rds
Cds
Rd
Cpd
Ld
Lg
Cpg
Rg
Cgs
Ri
Cgd
gm
tau
0.60
0.04
160.0
0.08
0.8
0.10
0.30
0.10
0.03
0.50
1.2
3.0
0.08
170.0
3.0
Ω
nH
Ω
pF
Ω
pF
nH
nH
pF
Ω
pF
Ω
pF
mS
psec
Rg
Cgs
Cgd
Cpg
Ri
gm
tau
Rs
Ls
SOURCE
Source Resistance
Source Inductance
Drain-Source Resistance
Drain-Source Capacitance
Drain Resistance
Drain Pad Capacitance
Drain Inductance
Gate Bond Wire Inductance
Gate Pad Capacitance
Gate Resistance
Gate-Source Capacitance
Channel Resistance
Gate-Drain Capacitance
Transconductance
Transit Time
ORDERING INFORMATION
Chip
Package 70
Package 71
Package 73
MwT-H9
MwT-H970
MwT-H971
MwT-H973
NOTE:
For Package information, please see supplimentary application note from our website at
www.mwtinc.com. When placing order or inquiring, please specify BIN range, wafer no., if
known, and screening level required.
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
MwT-H9
AlGaAs/InGaAs PHEMT
MwT-9 And H9
DUAL BIAS
Output Reference
Plane
18 Mils Long
Copper Heat Sink
5 Mils Below Level of
Microstrip
MwT
FPH9
MwT-9 And H9
OPTIONAL BONDING
Output Reference
Plane
50
Ω
Output
Microstrip
2 Mils
50
Ω
Output
Microstrip
2 Mils
18 Mils Long
Copper Heat Sink
5 Mils Below Level of
Microstrip
20 Mils
MwT
FPH9
20 Mils
7 Mils Long
Input Reference
Plane
50
Ω
Input
Microstrip
2 Mils
Gold Ridge
10x 10x 5 Mils
(2 each)
7 Mils Long
Input Reference
Plane
50
Ω
Input
Microstrip
2 Mils
All Bond
Wires are 1.0
Mil Diameter
Gold Ridge
10x 10x 5 For
Dual Bias, or
25pF Caps for
All Bond
Wires are 1.0
Single Bias
(2 each)
Mil Diameter
SAFE OPERATING LIMITS vs. BACKSIDE CHIP
400
325
150
125
100
75°
C or Lower
°
Absolute Maximum
Continuous Maximum
MAXIMUM RATINGS AT Ta = 25
°
C
125
100
75°
C or Lower
°
SYMBOL
PARAMETER
UNITS
CONT MAX
1
ABSOLUTE MAX
2
Ids (mA)
250
175
100
0
VDS
Tch
Tst
Pin
Drain to Source Voltage
Channel Temperature
Storage Temperature
RF Input Power
V
°
C
°
C
mW
See Safe Operating Limits
+150
+175
-65 to +150
+175
200
300
0
2
4
Vds (V)
6
8
NOTES: 1. Exceeding any one of these limits in continuous operation may reduce the
mean-time-to-failure below the design goals.
2. Exceeding any one of these limits may cause permanent damage.
BIN SELECTION
BIN#
IDSS
(mA)
1
2
3
4
162-
174
5
174-
186
6
186-
198
7
198-
210
8
210-
222
9
222-
234
10
234-
246
11
246-
258
12
258-
270
13
270-
282
126- 138- 150-
138 150 162
BIN ACCURACY STATEMENT
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required.
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
