Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, Metal, 3 Pin
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Motorola ( NXP ) |
| 包装说明 | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknown |
| 外壳连接 | COLLECTOR |
| 最大集电极电流 (IC) | 0.5 A |
| 集电极-发射极最大电压 | 400 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 20 |
| JEDEC-95代码 | TO-205AD |
| JESD-30 代码 | O-MBCY-W3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 200 °C |
| 封装主体材料 | METAL |
| 封装形状 | ROUND |
| 封装形式 | CYLINDRICAL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | PNP |
| 功耗环境最大值 | 5 W |
| 最大功率耗散 (Abs) | 5 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | WIRE |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 30 MHz |
| 最大关闭时间（toff） | 720 ns |
| MJ4647 | MJF13007 | BUT13 | BUW12 | BUV46 | MJH10012 | BU326 | MJF13009 | |
|---|---|---|---|---|---|---|---|---|
| 描述 | Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, PNP, Silicon, TO-205AD, Metal, 3 Pin | Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN | Power Bipolar Transistor, 28A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin | Transistor | Transistor | Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plastic/Epoxy, 3 Pin | Transistor | Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknow | unknow |
| 最大集电极电流 (IC) | 0.5 A | 8 A | 28 A | 8 A | 5 A | 10 A | 6 A | 12 A |
| 配置 | SINGLE | SINGLE | DARLINGTON | Single | Single | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | Single | SINGLE |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 最高工作温度 | 200 °C | 150 °C | 200 °C | 150 °C | 150 °C | 150 °C | 200 °C | 150 °C |
| 极性/信道类型 | PNP | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
| 最大功率耗散 (Abs) | 5 W | 50 W | 175 W | 125 W | 85 W | 118 W | 75 W | 50 W |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 厂商名称 | Motorola ( NXP ) | - | - | - | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) | Motorola ( NXP ) |
| 外壳连接 | COLLECTOR | ISOLATED | COLLECTOR | - | - | COLLECTOR | - | ISOLATED |
| 集电极-发射极最大电压 | 400 V | 400 V | 400 V | - | - | 400 V | - | 400 V |
| 最小直流电流增益 (hFE) | 20 | 5 | 20 | 10 | 5 | 20 | - | 6 |
| JEDEC-95代码 | TO-205AD | TO-220AB | TO-204AA | - | - | TO-218 | - | TO-220AB |
| JESD-30 代码 | O-MBCY-W3 | R-PSFM-T3 | O-MBFM-P2 | - | - | R-PSFM-T3 | - | R-PSFM-T3 |
| 元件数量 | 1 | 1 | 1 | - | - | 1 | - | 1 |
| 端子数量 | 3 | 3 | 2 | - | - | 3 | - | 3 |
| 封装主体材料 | METAL | PLASTIC/EPOXY | METAL | - | - | PLASTIC/EPOXY | - | PLASTIC/EPOXY |
| 封装形状 | ROUND | RECTANGULAR | ROUND | - | - | RECTANGULAR | - | RECTANGULAR |
| 封装形式 | CYLINDRICAL | FLANGE MOUNT | FLANGE MOUNT | - | - | FLANGE MOUNT | - | FLANGE MOUNT |
| 功耗环境最大值 | 5 W | 40 W | 175 W | - | - | 118 W | - | 40 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | - | - | Not Qualified | - | Not Qualified |
| 端子形式 | WIRE | THROUGH-HOLE | PIN/PEG | - | - | THROUGH-HOLE | - | THROUGH-HOLE |
| 端子位置 | BOTTOM | SINGLE | BOTTOM | - | - | SINGLE | - | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | - | - | SWITCHING | - | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | - | - | SILICON | - | SILICON |
| 标称过渡频率 (fT) | 30 MHz | 14 MHz | - | - | 12 MHz | - | 6 MHz | 8 MHz |
| 最大关闭时间（toff） | 720 ns | 3700 ns | 3400 ns | - | - | 30000 ns | - | 3700 ns |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
