NVMFD5853NL
Power MOSFET
40 V, 10 mW, 34 A, Dual N−Channel Logic
Level, Dual SO−8FL
Features
•
•
•
•
Small Footprint (5x6 mm) for Compact Designs
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NVMFD5853NLWF − Wettable Flanks Option for Enhanced Optical
Inspection
•
AEC−Q101 Qualified and PPAP Capable
•
This is a Pb−Free Device
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
YJ−mb
(Notes 1,
2, 3, 4)
Power Dissipation
R
YJ−mb
(Notes 1, 2, 3)
Continuous Drain Cur-
rent R
qJA
(Notes 1, 3
& 4)
Power Dissipation
R
qJA
(Notes 1 & 3)
Pulsed Drain Current
T
mb
= 25°C
Steady
State
T
mb
= 100°C
T
mb
= 25°C
T
mb
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
40
"20
34
24
24
12
12
8.5
3.0
1.5
165
−55 to
175
34
40
A
°C
A
mJ
W
A
W
Unit
V
V
A
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V
(BR)DSS
40 V
15 mW @ 4.5 V
Dual N−Channel
D1
D2
R
DS(on)
MAX
10 mW @ 10 V
34 A
I
D
MAX
G1
S1
G2
S2
MARKING DIAGRAM
D1 D1
1
DFN8 5x6
(SO8FL)
CASE 506BT
S1
G1
S2
G2
5853xx
AYWZZ
D2 D2
D1
D1
D2
D2
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
GS
= 10 V, I
L(pk)
= 28.3 A,
L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260
°C
5853NL = Specific Device Code
for NVMFD5853NL
5853LW = Specific Device Code
for NVMFD5853NLWF
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
Device
Package
Shipping
†
THERMAL RESISTANCE MAXIMUM RATINGS
(Note 1)
Parameter
Junction−to−Mounting Board (top) − Steady
State (Notes 2, 3)
Junction−to−Ambient − Steady State (Note 3)
Junction−to−Ambient − Steady State (min foot-
print)
R
qJA
Symbol
R
YJ−mb
Value
6.2
51
162
°C/W
Unit
NVMFD5853NLT1G
NVMFD5853NLWFT1G
DFN8
1500 / Tape &
(Pb−Free)
Reel
DFN8
1500 / Tape &
(Pb−Free)
Reel
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second are higher but are dependent on pulse duration and duty cycle.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2014
1
September, 2014 − Rev. 4
Publication Order Number:
NVMFD5853NL/D
NVMFD5853NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
V
GS
= 10 V, V
DS
= 32 V, I
D
= 15 A
V
GS
= 4.5 V, V
DS
= 32 V,
I
D
= 15 A
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 25 V
1100
152
100
12.8
1.0
3.7
7.0
23
nC
nC
pF
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
g
FS
V
GS
= 10 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 5 V, I
D
= 5 A
V
GS
= V
DS
, I
D
= 250
mA
1.4
5.9
8.4
12.7
22
10
15
S
2.4
V
mV/°C
mW
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
40
37.1
1.0
100
±100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
V
DS
= 0 V, V
GS
=
±20
V
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
T
J
= 25°C
T
J
= 125°C
V
GS
= 10 V, V
DS
= 20 V,
I
D
= 15 A, R
G
= 2.5
W
V
GS
= 4.5 V, V
DS
= 20 V,
I
D
= 15 A, R
G
= 2.5
W
10
53
17
30
9.0
23
22
4.3
ns
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
V
SD
t
RR
t
a
t
b
Q
RR
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms,
I
S
= 15 A
V
GS
= 0 V,
I
S
= 20 A
0.84
0.69
20
12
8.1
12.1
nC
ns
1.1
V
5. Pulse Test: pulse width = 300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVMFD5853NL
TYPICAL CHARACTERISTICS
70
10 V
60
I
D
, DRAIN CURRENT (A)
50
40
30
3.4 V
20
10
0
0.0
3.0 V
1.0
2.0
3.0
4.0
5.0
7.5 V
4.5 V
T
J
= 25°C
4.2 V
I
D
, DRAIN CURRENT (A)
60
50
40
30
T
J
= 25°C
20
10
0
2.0
T
J
= 125°C
2.5
3.0
T
J
= −55°C
3.5
4.0
4.5
70
V
DS
≥
10 V
3.8 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.030
I
D
= 15 A
T
J
= 25°C
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.0200
Figure 2. Transfer Characteristics
T
J
= 25°C
0.0175
0.0150
0.0125
0.0100
V
GS
= 10 V
0.0075
0.0050
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5 V
0.025
0.020
0.015
0.010
0.005
2
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. V
GS
2.2
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50
−25
0
25
50
75
100
125
150
175
100
I
D
= 15 A
V
GS
= 10 V
I
DDS
, LEAKAGE (nA)
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1000
T
J
= 125°C
5
10
15
20
25
30
35
40
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NVMFD5853NL
TYPICAL CHARACTERISTICS
1500
1250
C, CAPACITANCE (pF)
1000
750
500
250
C
rss
0
0
10
20
30
40
C
iss
V
GS
= 0 V
T
J
= 25°C
10
Q
T
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
6
4
Q
gs
Q
gd
C
oss
2
T
J
= 25°C
V
DS
= 32 V
I
D
= 15 A
0
5
10
15
20
25
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
I
S
, SOURCE CURRENT (A)
V
DS
= 20 V
I
D
= 15 A
V
GS
= 4.5 V
100
t, TIME (ns)
t
f
t
d(off)
10
t
d(on)
70
60
50
40
30
20
10
0
0.60
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
t
r
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.65
0.70
0.75
0.80
0.85
0.90
0.95 1.00
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
10
ms
10
100
ms
V
GS
= 10 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
1 ms
1
10 ms
dc
100
0.1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
NVMFD5853NL
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
10
R
qJA
(°C/W)
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
1
PULSE TIME (sec)
Figure 12. Thermal Response
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