DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BAV20; BAV21
General purpose diodes
Product data sheet
Supersedes data of 1996 Sep 17
1999 May 25
NXP Semiconductors
Product data sheet
General purpose diodes
FEATURES
•
Hermetically sealed leaded glass
SOD27 (DO-35) package
•
Switching speed: max. 50 ns
•
General application
•
Continuous reverse voltage:
max. 150 V, 200 V
•
Repetitive peak reverse voltage:
max. 200 V, 250 V
•
Repetitive peak forward current:
max. 625 mA.
APPLICATIONS
•
General purposes in industrial
equipment e.g. oscilloscopes,
digital voltmeters and video output
stages in colour television.
The diodes are type branded.
handbook, halfpage
k
BAV20; BAV21
DESCRIPTION
The BAV20 and BAV21 are switching diodes fabricated in planar technology,
and encapsulated in hermetically sealed leaded glass SOD27 (DO-35)
packages.
a
MAM246
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
1999 May 25
2
NXP Semiconductors
Product data sheet
General purpose diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
BAV20
BAV21
V
R
continuous peak reverse voltage
BAV20
BAV21
I
F
I
FRM
I
FSM
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
μs
t = 100
μs
t=1s
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed circuit-board; lead length 10 mm.
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
−
−
−
−
−65
−
see Fig.2; note 1
−
−
−
−
PARAMETER
repetitive peak reverse voltage
−
−
CONDITIONS
BAV20; BAV21
MIN.
MAX.
200
250
150
200
250
625
V
V
V
V
UNIT
mA
mA
9
3
1
400
+175
175
A
A
A
mW
°C
°C
1999 May 25
3
NXP Semiconductors
Product data sheet
General purpose diodes
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
see Fig.3
I
F
= 100 mA
I
F
= 200 mA
I
R
reverse current
see Fig.5
V
R
= V
Rmax
V
R
= V
Rmax
; T
j
= 150
°C
C
d
t
rr
diode capacitance
reverse recovery time
f = 1 MHz; V
R
= 0; see Fig.6
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
Ω;
measured
at I
R
= 3 mA; see Fig.8
−
−
−
−
−
−
CONDITIONS
BAV20; BAV21
MIN.
MAX.
1.0
1.25
100
100
5
50
V
V
UNIT
nA
μA
pF
ns
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on a printed circuit-board without metallization pad.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
lead length 10 mm
lead length 10 mm; note 1
VALUE
240
375
UNIT
K/W
K/W
1999 May 25
4
NXP Semiconductors
Product data sheet
General purpose diodes
GRAPHICAL DATA
BAV20; BAV21
handbook, halfpage
300
MBG449
handbook, halfpage
600
MBG459
IF
(mA)
200
IF
(mA)
400
(1)
(2)
(3)
100
200
0
0
100
Tamb ( C)
o
0
200
0
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
1
VF (V)
2
Device mounted on an FR4 printed-circuit board; lead length 10 mm.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
handbook, full pagewidth
10
2
MBG703
IFSM
(A)
10
1
10
−1
1
10
10
2
10
3
tp (μs)
10
4
Based on square wave currents.
T
j
= 25
°C
prior to surge.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1999 May 25
5
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