Reflective Photosensors (Photo Reflectors)
CNZ2253
(ON2253)
Reflective Photosensor
Overview
CNZ2253 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a high sensitivity Si Darlington
phototransistor is used as the light detecting element. The two
elements are located parallel in the same direction and objects are
detected when passing in front of the device.
3.0±0.2
Mark for indicating
LED side
7.5±0.2
(3.2)
4.0±0.2
Unit : mm
10.2 min. 6.0±0.2
1.7±0.2
ø2.2±0.2
Features
High sensitivity
Small size and light weight
Optical mark reading
Detection of coin and bill
Applications
Detection of paper, film and cloth
Detection of position and edge
(7.2)
2
3
ø0.45±0.05
ø0.3±0.05
*2-0.9±0.15
Start, end mark detection of magnetic tape
1
Absolute Maximum Ratings
(Ta = 25˚C)
Parameter
Reverse voltage (DC)
Input (Light
Forward current (DC)
emitting diode)
Power dissipation
Collector to emitter voltage
Output (Photo Emitter to collector voltage
transistor)
Collector current
Collector power dissipation
Temperature
Operating ambient temperature
Storage temperature
Symbol Ratings
V
R
I
F
P
D*1
V
CEO
V
ECO
I
C
P
C
*2
Unit
V
mA
mW
V
V
mA
mW
˚C
˚C
(Note)
1
2 3
4
1. ( ) Dimension is reference
Pin connection
2. * is dimension at the root of leads
3
50
75
20
5
30
100
–25 to +85
*1
T
opr
T
stg
–30 to +100
Input power derating ratio is
1.0 mW/˚C at Ta
≥
25˚C.
*2
Output power derating ratio is
1.34 mW/˚C at Ta
≥
25˚C.
Electrical Characteristics
(Ta = 25˚C)
Parameter
Forward voltage (DC)
Input
Reverse current (DC)
characteristics
Capacitance between terminals
Output characteristics Collector cutoff current
Symbol
V
F
I
R
C
t
I
CEO
I
F
= 50mA
V
R
= 3V
V
R
= 0V, f = 1MHz
V
CE
= 10V
3
150
1.5
50
0.5
30
Conditions
min
typ
1.2
max
1.5
10
Unit
V
µA
pF
µA
mA
µs
V
Collector current
I
C*1*2
V
CC
= 5V, I
F
= 10mA, R
L
= 100Ω
Transfer
t
r*3
, t
f*4
V
CC
= 10V, I
C
= 1mA, R
L
= 100Ω
characteristics Response time
Collector to emitter saturation voltage V
CE(sat)
I
F
= 50mA, I
C
= 1mA
*1
I
C
classifications
Class
I
C
(mA)
Q
3 to 9
R
6 to 18
S
12 to 30
*2
Transfer characteristics measurement circuit
(Ambient light is shut off completely)
I
C
V
CC
d = 3 mm
I
F
*3
*4
90%
10%
t
f
t
r
Note) The part number in the parenthesis shows conventional part number.
;;
;;
;;
;
;
;
;;
;
;;
;
R
L
Time required for the collector current to increase
from 10% to 90% of its final value.
Time required for the collector current to decrease
from 90% to 10% of its initial value.
;
;;
4
Standard white paper
(Reflective ratio 90%)
0.5
10.6±0.3
9.6±0.3
1
CNZ2253
Reflective Photosensors (Photo Reflectors)
I
F
, I
C
— Ta
60
60
I
F
— V
F
1.6
Ta = 25˚C
V
F
— Ta
I
F
, I
C
(mA)
50
I
F
50
I
F
(mA)
Forward current, collector current
40
I
C
40
V
F
(V)
1.2
I
F
= 50mA
Forward current
Forward voltage
10mA
0.8
30
30
20
20
0.4
10
10
0
– 25
0
20
40
60
80
100
0
0
0.4
0.8
1.2
1.6
2.0
2.4
0
– 40 – 20
0
20
40
60
80
100
Ambient temperature Ta (˚C )
Forward voltage V
F
(V)
Ambient temperature Ta (˚C )
I
C
— I
F
10
3
V
CC
= 5V
Ta = 25˚C
R
L
= 100Ω
10
3
I
C
— V
CE
160
Ta = 25˚C
V
CC
= 5V
I
F
= 10mA
R
L
= 100Ω
120
I
C
— Ta
I
C
(mA)
10
2
I
C
(mA)
10
2
I
F
= 20mA
10
10
Relative output current
10
2
Collector current
Collector current
I
C
(%)
10mA
80
1
1
40
10
–1
1
10
10
2
10
3
10
–1
10
–1
1
10
0
– 40 – 20
0
20
40
60
80
100
Forward current I
F
(mA)
Collector to emitter voltage V
CE
(V)
Ambient temperature Ta (˚C )
I
CEO
— Ta
10
3
V
CE
= 10V
10
4
t
r
— I
C
V
CC
= 10V
Ta = 25˚C
16
I
C
— d
V
CC
= 5V
Ta = 25˚C
R
L
= 100Ω
I
F
= 1.5mA
12
I
CEO
(µA)
10
3
R
L
= 1kΩ
500Ω
100Ω
t
r
(µs)
I
C
(mA)
10
2
10
Dark current
1
Rise time
10
2
Collector current
8
10
10
–1
4
10
–2
– 40 – 20
0
20
40
60
80
100
1
10
–2
10
–1
1
10
0
0
2
Ambient temperature Ta (˚C )
Collector current I
C
(mA)
2
;
;
d
4
6
8
Distance d (mm)
Caution for Safety
Gallium arsenide material (GaAs) is used
in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemi-
cally decompose the product, since gallium arsenide
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when dispos-
ing of the products. Do not mix them with ordinary in-
dustrial waste or household refuse when disposing of
GaAs-containing products.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the
products or technologies described in this material and controlled under the "Foreign Exchange and Foreign
Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting
of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or general electronic
equipment (such as office equipment, communications equipment, measuring instruments and household ap-
pliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion
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•
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reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the prod-
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2001 MAR
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