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NE961R500: 产品描述RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-3; 产品类别分立半导体晶体管; 文件大小63KB，共10页; 制造商NEC(日电)

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NE961R500概述

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-3

	NE961R500	NE962R575
描述	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-3	RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, HERMETIC SEALED, CERAMIC, 75, 2 PIN
厂商名称	NEC(日电)	NEC(日电)
包装说明	DIE-3	HERMETIC SEALED, CERAMIC, 75, 2 PIN
Reach Compliance Code	unknown	unknown
配置	SINGLE	SINGLE
最小漏源击穿电压	9 V	9 V
最大漏极电流 (ID)	0.7 A	0.7 A
FET 技术	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
最高频带	KU BAND	KU BAND
JESD-30 代码	R-XUUC-N3	R-CDFM-F2
元件数量	1	1
端子数量	3	2
工作模式	DEPLETION MODE	DEPLETION MODE
封装主体材料	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR	RECTANGULAR
封装形式	UNCASED CHIP	FLANGE MOUNT
极性/信道类型	N-CHANNEL	N-CHANNEL
认证状态	Not Qualified	Not Qualified
表面贴装	YES	YES
端子形式	NO LEAD	FLAT
端子位置	UPPER	DUAL
晶体管应用	AMPLIFIER	AMPLIFIER
晶体管元件材料	GALLIUM ARSENIDE	GALLIUM ARSENIDE

器件捷径: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

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