ABA-51563
3.5 GHz Broadband Silicon RFIC Amplifier
Data Sheet
Description
Avago’s ABA-51563 is an economical, easy-to-
use, internally 50-ohm matched silicon monolithic
broadband amplifier that offers excellent gain and flat
broadband response from DC to 3.5 GHz. Packaged in
an ultraminiature industry-standard SOT-363 package, it
requires half the board space of a SOT-143 package.
At 2 GHz, the ABA-51563 offers a small-signal gain of
21.5 dB, output P1dB of 1.8 dBm and 11.4 dBm output
third order intercept point. It is suitable for use as buffer
amplifiers for wideband applications. They are designed
for low cost gain blocks in cellular applications, DBS tuners,
LNB and other wireless communications systems.
ABA-51563 is fabricated using Avago’s HP25 silicon
bipolar process, which employs a double-diffused single
polysilicon process with self-aligned submicron emitter
geometry. The process is capable of simultaneous high
f
T
and high NPN breakdown (25 GHz f
T
at 6V BVCEO). The
process utilizes industry standard device oxide isolation
technologies and submicron aluminum multilayer
interconnect to achieve superior performance, high
uniformity, and proven reliability.
Features
•
Operating frequency: DC ~ 3.5 GHz
•
21.5 dB gain
•
VSWR < 2.0 throughout operating frequency
•
1.8 dBm output P1dB
•
3.7 dB noise figure
•
Unconditionally stable
•
Single 5V supply (Id = 18 mA)
•
Lead-free option available
Applications
•
Amplifier for cellular, cordless, special mobile radio, PCS,
ISM, wireless LAN, DBS, TVRO, and TV tuner applications
Attention:
Surface Mount Package: SOT-363/SC70
Observe precautions for handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Pin Connections and Package Marking
GND 2
GND 1
Input
Output
& Vcc
GND 3
Vcc
Simplified Schematic
Vcc
RF
Output
& Vcc
Note:
Top View. Package marking provides orientation and identification.
“x” is character to identify date code.
AHx
RF
Input
Ground 1
Ground 3
Ground 2
ABA-51563 Absolute Maximum Ratings
[1]
Symbol
V
cc
P
in
P
diss
T
j
T
STG
Parameter
Device Voltage, RF output to ground (T = 25°C)
CW RF Input Power (Vcc = 5V)
Total Power Dissipation
[3]
Junction Temperature
Storage Temperature
Units
V
dBm
W
°C
°C
Absolute Max.
+7
+20
0.3
150
-65 to 150
Thermal Resistance
[2]
(Vcc = 5V)
θ
jc
= 104°C/W
Notes:
1. Operation of this device in excess of any
of these limits may cause permanent
damage.
2. Thermal resistance measured using 150°C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tb, is
25°C. Derate 2.3 mW/°C for Tb > 120.8°C.
Electrical Specifications
T
c
= +25°C, Z
o
= 50 Ω, P
in
= -30 dBm, V
cc
= 5V, Freq = 2 GHz, unless stated otherwise.
Symbol
Gp
[1]
∆Gp
NF
[1]
P1dB
[1]
OIP3
[1]
VSWR
in[1]
VSWR
out[1]
Icc
[1]
td
[1]
Parameter and Test Condition
Power Gain (|S
21
|
2
)
Power Gain Flatness,
Noise Figure
Output Power at 1dB Gain Compression
Output Third Order Intercept Point
Input VSWR
Output VSWR
Device Current
Group Delay
f = 0.1 ~ 2.5 GHz
f = 0.1 ~ 3.5 GHz
Units
dB
dB
dB
dBm
dBm
Min.
20
Typ.
21.5
1.0
1.3
3.7
1.8
11.4
1.2
Max.
Std Dev.
0.2
4
0.12
0.13
0.24
1.2
mA
ps
18
140
28
0.3
Notes:
1. Measurements taken on 50Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 6 wafer lots. Future wafers allocated to this product may have nominal
values anywhere within the upper and lower spec limits.
C
block
RF Output
AHx
RFC
Vcc
C
bypass
RF Input
C
block
Figure 1. ABA-51563 Production Test Circuit.
2
ABA-51563 Typical Performance
T
c
= +25°C, Z
o
= 50Ω, V
cc
= 5V unless stated otherwise.
23
22
21
GAIN (dB)
GAIN (dB)
23
22
4.5
4
21
NF (dB)
20
19
18
17
4.5V
5V
5.5V
20
19
18
17
-40C
+25C
+85C
3.5
4.5V
5V
5.5V
3
2.5
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 2. Gain vs. Frequency and Voltage.
Figure 3. Gain vs. Frequency and Temperature.
Figure 4. Noise Figure vs. Frequency and
Voltage.
6
4
2
0
-2
6
6
4
5
P1dB (dBm)
P1dB (dBm)
2
0
-2
NF (dB)
4
3
-40C
+25C
+85C
-4
-6
4.5V
5V
5.5V
-4
-6
-40C
+25C
+85C
2
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency and
Temperature.
20
Figure 6. Output Power for 1 dB Gain
Compression vs. Frequency and Voltage.
16
Figure 7. Output Power for 1 dB Gain
Compression vs. Frequency and Temperature.
16
OIP3 (dBm)
OIP3 (dBm)
4.5V
5V
5.5V
12
12
8
8
4
4
-40C
+25C
+85C
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 8. Output IP3 vs. Frequency and Voltage.
Figure 9. Output IP3 vs. Frequency and
Temperature.
3
3
-40C
+25C
+85C
-4
-6
4.5V
5V
5.5V
-4
-6
-40C
+25C
+85C
2
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
ABA-51563 Typical
vs. Frequency and
continued
6. Output Power for 1 dB Gain
Figure
Figure 5. Noise Figure
Performance,
Compression vs. Frequency and Voltage.
T
c
Temperature.
= 50Ω, V
cc
= 5V unless stated otherwise.
= +25°C, Z
o
20
16
Figure 7. Output Power for 1 dB Gain
Compression vs. Frequency and Temperature.
16
12
OIP3 (dBm)
12
OIP3 (dBm)
4.5V
5V
5.5V
8
8
4
4
-40C
+25C
+85C
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 8. Output IP3 vs. Frequency and Voltage.
Figure 9. Output IP3 vs. Frequency and
Temperature.
60
1.8
1.7
1.6
1.5
VSWR IN
VWSR OUT
50
40
+25C
-40C
+85C
1.3
1.2
1.1
1.0
0.9
0.8
0
1
2
3
4
5
6
Icc (mA)
VSWR
1.4
30
20
10
0
0
1
2
3
4
5
6
7
FREQUENCY (GHz)
VOLTAGE (V)
Figure 10. Input and Output VSWR vs.
Frequency.
Figure 11. Supply Current vs. Voltage and
Temperature.
4
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