RN2972HFE,RN2973HFE
TOSHIBA Transistor
RN2972HFE,RN2973HFE
Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
•
•
Two devices are incorporated into an Extreme-Super-Mini (6 pin)
package.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
•
Complementary to RN1970HFE, RN1971HFE
Unit: mm
Equivalent Circuit and Bias Resistor Values
C
B
R1
E
JEDEC
JEITA
TOSHIBA
―
―
2−2N1A
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
(Note 1)
T
j
T
stg
Rating
−30
−30
−5
−100
100
150
−55~150
Unit
V
V
V
mA
mW
°C
°C
Weight:0.003g (typ.)
Equivalent Circuit
(top view)
6
5
4
Q1
Q2
1
2
3
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Total rating
1
2007-11-01
RN2972HFE,RN2973HFE
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Input resistor
RN2972HFE
RN2973HFE
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
f
T
C
ob
R1
Test Condition
V
CB
= −30
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
V
CE
= −5
V, I
C
= −1
mA
I
C
= −5
mA, I
B
= −0.25
mA
V
CE
= −10
V, I
C
= −5
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
⎯
Min
⎯
⎯
300
⎯
⎯
⎯
17.6
37.6
Typ.
⎯
⎯
⎯
−0.06
200
3
22
47
Max
−100
−100
⎯
−0.15
⎯
⎯
26.4
56.4
V
MHz
pF
kΩ
Unit
nA
nA
2
2007-11-01
RN2972HFE,RN2973HFE
Q1,Q2 Common
RN2972HFE
-100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (μA)
IC - VI(ON)
-10000
RN2972HFE
IC - VI(OFF)
Ta=100°C
-10
-1000
Ta=100°C
25
-100
EMITTER
COMMON
VCE=5V
-10
-25
-1
25
-25
EMITTER
COMMON
VCE=5V
-10
-100
-0.1
-0.1
-1
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
INPUT VOLTAGE VI(ON) (V)
INPUT VOLTAGE VI(OFF) (V)
RN2973HFE
-100
COLLECTOR CURRENT IC (mA)
IC - VI(ON)
RN2973HFE
-10000
COLLECTOR CURRENT IC (μA)
IC - VI(OFF)
Ta=100°C
-10
-1000
Ta=100°C
-100
25
-25
-1
25
-25
-0.1
-0.1
-1
EMITTER
COMMON
VCE=5V
EMITTER
COMMON
VCE=5V
-10
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-10
-100
INPUT VOLTAGE VI(ON) (V)
INPUT VOLTAGE VI(OFF) (V)
3
2007-11-01
RN2972HFE,RN2973HFE
Q1,Q2 Common
RN2972HFE
10000
hFE - IC
-1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
RN2972HFE
VCE(sat) - IC
DC CURRENT GAIN hFE
Ta=100°C
1000
-100
Ta=100°C
100
-25
25
-10
-25
25
EMITTER COMMON
IC/IB=20
EMITTER COMMON
VCE=5V
10
-0.1
-1
-10
-100
-1
-0.1
-1
-10
-100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
RN2973HFE
10000
hFE - IC
-1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (mV)
RN2973HFE
VCE(sat) - IC
DC CURRENT GAIN hFE
Ta=100°C
1000
-100
Ta=100°C
100
-25
25
-10
-25
25
EMITTER COMMON
VCE=5V
10
-0.1
-1
-10
-100
EMITTER COMMON
IC/IB=20
-1
-0.1
-1
-10
-100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
4
2007-11-01
RN2972HFE,RN2973HFE
Type Name
Marking
Type name
RN2972HFE
YY3
Type name
RN2973HFE
YY4
5
2007-11-01
传感器
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