HSMP-389x Series, HSMP-489x Series
Surface Mount RF PIN Switch Diodes
Data Sheet
Description/Applications
The HSMP-389x series is optimized for switching appli-
cations where low resistance at low current and low ca-
pacitance are required. The HSMP-489x series products
feature ultra low parasitic inductance. These products
are specifically designed for use at frequencies which
are much higher than the upper limit for conventional
PIN diodes.
Features
•
Unique Configurations in Surface Mount Packages
– Add Flexibility
– Save Board Space
– Reduce Cost
•
Switching
– Low Capacitance
– Low Resistance at Low Current
•
Low Failure in Time (FIT) Rate
[1]
Pin Connections and Package Marking
1
6
•
Matched Diodes for Consistent Performance
•
Better Thermal Conductivity for Higher Power
Dissipation
•
Lead-free
Note:
1. For more information see the Surface Mount PIN Reliability Data
Sheet.
GUx
2
3
5
4
Notes:
1. Package marking provides orientation, identification, and date
code.
2. See “Electrical Specifications” for appropriate package marking.
Package Lead Code Identification,
SOT-23/143
(Top View)
SINGLE
SERIES
Package Lead Code Identification,
SOT-323
(Top View)
SINGLE
SERIES
Package Lead Code Identification,
SOT-363
(Top View)
6
UNCONNECTED
TRIO
5
4
6
DUAL SWITCH
MODEL
5
4
#0
COMMON
ANODE
#2
COMMON
CATHODE
B
COMMON
ANODE
C
COMMON
CATHODE
1
2
L
3
1
2
R
3
6
LOW
INDUCTANCE
SINGLE
5
4
6
SERIES–
SHUNT PAIR
5
4
#3
UNCONNECTED
PAIR
#4
DUAL ANODE
E
DUAL ANODE
F
1
2
T
3
1
2
U
3
489B
#5
RING
QUAD
6
HIGH
FREQUENCY
SERIES
5
4
4890
1
2
3
3
4
V
1
#7
2
UNDER DEVELOPMENT
Absolute Maximum Ratings
[1]
T
C
= +25°C
Symbol
I
f
P
IV
T
j
T
stg
θ
jc
Parameter
Forward Current (1 µs Pulse)
Peak Inverse Voltage
Junction Temperature
Storage Temperature
Thermal Resistance
[2]
Unit
Amp
V
°C
°C
°C/W
SOT-23/143
1
100
150
-65 to 150
500
SOT-323/363
1
100
150
-65 to 150
150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. T
C
= +25°C, where T
C
is defined to be the temperature at the package pins where contact is made to the circuit board.
ESD WARNING:
Handling Precautions Should Be Taken To Avoid Static Discharge.
2
Electrical Specifications, T
C
= 25°C, each diode
Part Number
HSMP-
3890
3892
3893
3894
3895
389B
389C
389E
389F
389L
389R
389T
389U
389V
Package
Marking
Code
G0
[1]
G2
[1]
G3
[1]
G4
[1]
G5
[1]
G0
[2]
G2
[2]
G3
[2]
G4
[2]
GL
[2]
S
[2]
Z
[2]
GU
[2]
GV
[2]
Lead
Code
0
2
3
4
5
B
C
E
F
L
R
T
U
V
Configuration
Single
Series
Common Anode
Common Cathode
Unconnected Pair
Single
Series
Common Anode
Common Cathode
Unconnected Trio
Dual Switch Mode
Low Inductance Single
Series-Shunt Pair
High Frequency Series Pair
Minimum
Breakdown
Voltage V
BR
(V)
100
Maximum
Series Resistance
R
S
(½)
2.5
Maximum
Total Capacitance
C
T
(pF)
0.30
est Conditions
T
V
R
= V
BR
Measure
I
R
10 µA
I
F
= 5 mA
f = 100 MHz
V
R
= 5 V
f = 1 MHz
Notes:
1. Package marking code is white.
2. Package is laser marked.
High Frequency (Low Inductance, 500 MHz – 3 GHz) PIN Diodes
Part
Number
HSMP-
489x
Package
Marking
Code
[1]
GA
Configuration
Dual Anode
Minimum
Breakdown
Voltage
V
BR
(V)
100
V
R
= V
BR
Measure
I
R
10 µA
Maximum
Series
Resistance
R
S
(½)
2.5
I
F
= 5 mA
Typical
Total
Capacitance
C
T
(pF)
0.33
f = 1 MHz
V
R
= 5 V
Maximum
Total
Capacitance
C
T
(pF)
0.375
V
R
= 5 V
f = 1 MHz
Typical
Total
Inductance
L
T
(nH)
1.0
f=500 MHz–
3 GHz
Test Conditions
Note:
1. SOT-23 package marking code is white; SOT-323 is laser marked.
Typical Parameters at
T
C
= 25°C
Part Number
HSMP-
389x
Test Conditions
Series Resistance
R
S
(½)
3.8
I
F
= 1 mA
f = 100 MHz
Carrier Lifetime
τ (ns)
200
I
F
= 10 mA
I
R
= 6 mA
Total Capacitance
C
T
(pF)
0.20 @ 5V
3
HSMP-389x Series Typical Performance, T
C
= 25°C, each diode
100
TOTAL CAPACITANCE (pF)
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0
1 MHz
1 GHz
4
8
12
16
20
INPUT INTERCEPT POINT (dBm)
0.8
1.0
1.2
120
Diode Mounted as a
Series Attenuator in a
115
50 Ohm Microstrip and
Tested at 123 MHz
110
RF RESISTANCE (OHMS)
10
105
100
95
90
85
1
0.1
0.01
0.1
1
10
100
I
F
– FORWARD BIAS CURRENT (mA)
V
R
– REVERSE VOLTAGE (V)
1
10
30
I
F
– FORWARD BIAS CURRENT (mA)
Figure 1. Total RF Resistance at 25 C vs.
Forward Bias Current.
Figure 2. Capacitance vs. Reverse
Voltage.
Figure 3. 2nd Harmonic Input Intercept
Point vs. Forward Bias Current.
200
T
rr
– REVERSE RECOVERY TIME (nS)
160
120
I
F
– FORWARD CURRENT (mA)
100
V
R
= –2V
10
1
80
V
R
= –5V
40
V
R
= –10V
0
10
15
20
25
30
0.1
125 C 25 C –50 C
0
0.2
0.4
0.6
V
F
– FORWARD VOLTAGE (V)
0.01
FORWARD CURRENT (mA)
Figure 4. Typical Reverse Recovery Time
vs. Reverse Voltage.
Figure 5. Forward Current vs. Forward
Voltage.
Typical Applications for Multiple Diode Products
1
2
3
2
1
1
0
4
5
6
b1
b2
b3
RF in
4
5
6
RF out
3
2
1
3
2
“ON”
“OFF”
1
0
0
2
+V
–V
1
Figure 7. HSMP-389L Unconnected Trio used in a Dual Voltage, High Isolation
Switch.
Figure 6. HSMP-389L used in a SP3T Switch.
4
Typical Applications for Multiple Diode Products
(continued)
1
+V
0
2
0
+V
RF out
6
5
4
“ON”
“OFF”
1
6
5
4
1
1
RF in
2
3
RF out
2
RF in
1
2
3
Figure 8. HSMP-389L Unconnected Trio used in a Positive Voltage,
High Isolation Switch.
Figure 9. HSMP-389T used in a Low Inductance Shunt
Mounted Switch.
Bias
Xmtr
Bias
Xmtr
bias
C
Ant
λ
4
C
Rcvr
Ant
λ
4
Rcvr
Bias
Antenna
Xmtr
PA
HSMP-389V
λ
4
LNA
HSMP-389U
λ
4
Rcvr
Figure 10. HSMP-389U Series/Shunt Pair used in a 900 MHz
Transmit/Receive Switch.
Figure 11. HSMP-389V Series/Shunt Pair used in a 1.8 GHz
Transmit/Receive Switch.
5
机器人开发
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
