Standard SRAM, 512KX36, 2.3ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209
参数名称 | 属性值 |
厂商名称 | SONY(索尼) |
零件包装代码 | BGA |
包装说明 | BGA, BGA209,11X19,40 |
针数 | 209 |
Reach Compliance Code | unknown |
ECCN代码 | 3A991.B.2.A |
最长访问时间 | 2.3 ns |
其他特性 | PIPELINED ARCHITECTURE; LATE WRITE |
最大时钟频率 (fCLK) | 200 MHz |
I/O 类型 | COMMON |
JESD-30 代码 | R-PBGA-B209 |
长度 | 22 mm |
内存密度 | 18874368 bit |
内存集成电路类型 | STANDARD SRAM |
内存宽度 | 36 |
功能数量 | 1 |
端子数量 | 209 |
字数 | 524288 words |
字数代码 | 512000 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | |
组织 | 512KX36 |
输出特性 | 3-STATE |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | BGA |
封装等效代码 | BGA209,11X19,40 |
封装形状 | RECTANGULAR |
封装形式 | GRID ARRAY |
并行/串行 | PARALLEL |
电源 | 1.5/1.8,1.8 V |
认证状态 | Not Qualified |
座面最大高度 | 2.3 mm |
最大待机电流 | 0.25 A |
最小待机电流 | 1.7 V |
最大压摆率 | 0.47 mA |
最大供电电压 (Vsup) | 1.95 V |
最小供电电压 (Vsup) | 1.7 V |
标称供电电压 (Vsup) | 1.8 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | OTHER |
端子形式 | BALL |
端子节距 | 1 mm |
端子位置 | BOTTOM |
宽度 | 14 mm |
CXK79M36C160GB-5 | CXK79M72C160GB-4 | CXK79M72C160GB-33 | CXK79M36C160GB-4 | CXK79M36C160GB-33 | CXK79M72C160GB-5 | |
---|---|---|---|---|---|---|
描述 | Standard SRAM, 512KX36, 2.3ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209 | Standard SRAM, 256KX72, 2.1ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209 | Standard SRAM, 256KX72, 1.8ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209 | Standard SRAM, 512KX36, 2.1ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209 | Standard SRAM, 512KX36, 1.8ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209 | Standard SRAM, 256KX72, 2.3ns, CMOS, PBGA209, 14 X 22 MM, 1 MM PITCH, PLASTIC, BGA-209 |
零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA |
包装说明 | BGA, BGA209,11X19,40 | BGA, BGA209,11X19,40 | BGA, BGA209,11X19,40 | BGA, BGA209,11X19,40 | BGA, BGA209,11X19,40 | BGA, BGA209,11X19,40 |
针数 | 209 | 209 | 209 | 209 | 209 | 209 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
最长访问时间 | 2.3 ns | 2.1 ns | 1.8 ns | 2.1 ns | 1.8 ns | 2.3 ns |
其他特性 | PIPELINED ARCHITECTURE; LATE WRITE | PIPELINED ARCHITECTURE; LATE WRITE | PIPELINED ARCHITECTURE; LATE WRITE | PIPELINED ARCHITECTURE; LATE WRITE | PIPELINED ARCHITECTURE; LATE WRITE | PIPELINED ARCHITECTURE; LATE WRITE |
最大时钟频率 (fCLK) | 200 MHz | 250 MHz | 303 MHz | 250 MHz | 303 MHz | 200 MHz |
I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 代码 | R-PBGA-B209 | R-PBGA-B209 | R-PBGA-B209 | R-PBGA-B209 | R-PBGA-B209 | R-PBGA-B209 |
长度 | 22 mm | 22 mm | 22 mm | 22 mm | 22 mm | 22 mm |
内存密度 | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit | 18874368 bit |
内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
内存宽度 | 36 | 72 | 72 | 36 | 36 | 72 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 209 | 209 | 209 | 209 | 209 | 209 |
字数 | 524288 words | 262144 words | 262144 words | 524288 words | 524288 words | 262144 words |
字数代码 | 512000 | 256000 | 256000 | 512000 | 512000 | 256000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
组织 | 512KX36 | 256KX72 | 256KX72 | 512KX36 | 512KX36 | 256KX72 |
输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | BGA | BGA | BGA | BGA | BGA | BGA |
封装等效代码 | BGA209,11X19,40 | BGA209,11X19,40 | BGA209,11X19,40 | BGA209,11X19,40 | BGA209,11X19,40 | BGA209,11X19,40 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
电源 | 1.5/1.8,1.8 V | 1.5/1.8,1.8 V | 1.5/1.8,1.8 V | 1.5/1.8,1.8 V | 1.5/1.8,1.8 V | 1.5/1.8,1.8 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 2.3 mm | 2.3 mm | 2.3 mm | 2.3 mm | 2.3 mm | 2.3 mm |
最大待机电流 | 0.25 A | 0.25 A | 0.25 A | 0.25 A | 0.25 A | 0.25 A |
最小待机电流 | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
最大压摆率 | 0.47 mA | 0.75 mA | 0.85 mA | 0.55 mA | 0.63 mA | 0.65 mA |
最大供电电压 (Vsup) | 1.95 V | 1.95 V | 1.95 V | 1.95 V | 1.95 V | 1.95 V |
最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
表面贴装 | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL |
端子节距 | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm | 1 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
宽度 | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm |
厂商名称 | SONY(索尼) | - | SONY(索尼) | SONY(索尼) | SONY(索尼) | SONY(索尼) |
是否无铅 | - | 含铅 | 含铅 | 含铅 | 含铅 | - |
是否Rohs认证 | - | 不符合 | 不符合 | 不符合 | 不符合 | - |
JESD-609代码 | - | e0 | e0 | e0 | e0 | - |
峰值回流温度(摄氏度) | - | 240 | 240 | 240 | 240 | - |
端子面层 | - | TIN LEAD | TIN LEAD | TIN LEAD | TIN LEAD | - |
处于峰值回流温度下的最长时间 | - | 10 | 10 | 10 | 10 | - |
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