ESMT
Flash
F25D08QA
8 Mbit Serial Flash Memory
with Dual and Quad
FEATURES
Single supply voltage 1.65~2V
Speed
- Fast Read for SPI mode
- Read max frequency: 33MHz
- Fast Read max frequency: 104MHz
- Fast Read Dual/Quad max frequency: 84MHz/104MHz
(168MHz equivalent Dual SPI;
416MHz equivalent Quad SPI)
- Fast Read for QPI mode
- Fast Read max frequency: 84MHz
- Fast Read Quad max frequency: 104MHz
(416MHz equivalent Quad QPI)
- 8/ 16/ 32/ 64 byte Wrap-Around Burst Read Mode
Low power consumption
- Active current: 15mA (typ.)
- Standby current: 30
μ
A (typ.)
- Deep Power Down current: 5
μ
A (typ.)
Reliability
- 100,000 typical program/erase cycles
- 20 years Data Retention
Program
- Page programming time: 0.4 ms (typical)
Page Programming
- 256 byte per programmable page
Program/Erase Suspend
Erase
- Chip Erase time 2 sec (typical)
- 64K bytes Block Erase time 130 ms (typical)
- 32K bytes Block Erase time 100 ms (typical)
- 4K bytes Sector Erase time 30 ms (typical)
Status and Security Register Feature
Command Reset
Advanced Security Features
- Flexible Block Protection (BP0-BP3)
Lockable 512 bytes OTP security sector
SPI Serial Interface
- SPI Compatible: Mode 0 and Mode 3
Support Serial Flash Discoverable Parameters (SFDP) mode
Write Protect (
WP
)
Hold Pin ( HOLD )
All Pb-free products are RoHS-Compliant
ORDERING INFORMATION
Product ID
F25D08QA –104PIG
F25D08QA –104PAIG
F25D08QA –104VIG
F25D08QA –104HIG
Speed
104MHz
104MHz
104MHz
104MHz
Package
8-lead
SOIC
8-lead
SOIC
8-lead
VSOP
8-contact
WSON
150 mil
200 mil
150 mil
6x5 mm
Comments
Pb-free
Pb-free
Pb-free
Pb-free
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2013
Revision: 1.1
1/69
ESMT
GENERAL DESCRIPTION
The F25D08QA is a 8 Megabit, 1.8V only CMOS Serial Flash
memory device. The device supports the standard Serial
Peripheral Interface (SPI), a Dual/Quad SPI and QPI. ESMT’s
memory devices reliably store memory data even after 100,000
programming and erase cycles.
The memory array can be organized into 4,096 programmable
pages of 256 byte each. 1 to 256 byte can be programmed at a
time with the Page Program instruction.
The device features sector erase architecture. The memory array
F25D08QA
is divided into 256 uniform sectors with 4K byte each; 32 uniform
blocks with 32K byte each; 16 uniform blocks with 64K byte each.
Sectors can be erased individually without affecting the data in
other sectors. Blocks can be erased individually without affecting
the data in other blocks. Whole chip erase capabilities provide
the flexibility to revise the data in the device. The device has
Sector, Block or Chip Erase but no page erase.
The sector protect/unprotect feature disables both program and
erase operations in any combination of the sectors of the
memory.
FUNCTIONAL BLOCK DIAGRAM
Page Address
Latch / Counter
High Voltage
Generator
Memory
Array
Page Buffer
Status
Register
Byte Address
Latch / Counter
Y-Decoder
Command and Conrol Logic
Serial Interface
CE
SCK
SI
(SIO
0
)
SO
WP
HOLD
(SIO
1
) (SIO
2
) (SIO
3
)
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2013
Revision: 1.1
2/69
ESMT
PIN CONFIGURATIONS
8-Lead SOIC / 8-Lead VSOP
(SOIC 8L, 150mil Body, 1.27mm Pin Pitch)
(SOIC 8L, 208mil Body, 1.27mm Pin Pitch)
(SOIC 8L, 150mil Body with thickness 0.88mm, 1.27mm Pin Pitch)
F25D08QA
CE
1
8
V
DD
SO / SIO
1
2
7
HOLD / SIO
3
WP / SIO
2
3
6
SCK
V
SS
4
5
SI / SIO
0
8- Contact WSON
(WSON 8C, 6mmX5mm Body, 1.27mm Contact Pitch)
CE
1
8
V
DD
SO / SIO
1
2
7
HOLD / SIO
3
WP / SIO
2
3
6
SCK
V
SS
4
5
SI / SIO
0
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2013
Revision: 1.1
3/69
ESMT
PIN DESCRIPTION
Symbol
SCK
F25D08QA
Pin Name
Serial Clock
Serial Data Input /
Serial Data Input Output 0
Functions
To provide the timing for serial input and output operations
To transfer commands, addresses or data serially into the device. Data is
latched on the rising edge of SCK (for Standard read mode). / Bidirectional IO
pin to transfer commands, addresses or data serially into the device on the
rising edge of SCK and read data or status from the device on the falling edge
of SCK(for Dual/Quad mode).
To transfer data serially out of the device. Data is shifted out on the falling edge
of SCK (for Standard read mode). / Bidirectional IO pin to transfer commands,
addresses or data serially into the device on the rising edge of SCK and read
data or status from the device on the falling edge of SCK (for Dual/Quad
mode).
To activate the device when CE is low.
The Write Protect (
WP
) pin is used to enable/disable BPL bit in the Status
Register. / Bidirectional IO pin to transfer commands, addresses or data serially
into the device on the rising edge of SCK and read data or status from the
device on the falling edge of SCK (for Quad mode).
To temporality stop serial communication with SPI flash memory without
resetting the device. / Bidirectional IO pin to transfer commands, addresses or
data serially into the device on the rising edge of SCK and read data or status
from the device on the falling edge of SCK (for Quad mode).
To provide power.
SI / SIO
0
SO / SIO
1
Serial Data Output /
Serial Data Input Output 1
Chip Enable
Write Protect /
Serial Data Input Output 2
CE
WP
/ SIO
2
HOLD / SIO
3
V
DD
V
SS
Hold /
Serial Data Input Output 3
Power Supply
Ground
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2013
Revision: 1.1
4/69
ESMT
SECTOR STRUCTURE
Table 1: Sector Address Table
64KB
Block
32KB
Block
31
15
30
Sector
255
:
248
247
:
240
239
:
232
231
:
224
223
:
216
215
:
208
Sector Size
(Kbytes)
4KB
:
4KB
4KB
:
4KB
4KB
:
4KB
4KB
:
4KB
4KB
:
4KB
4KB
:
4KB
Address range
0FF000h – 0FFFFFh
:
0F8000h – 0F8FFFh
0F7000h – 0F7FFFh
:
0F0000h – 0F0FFFh
0EF000h – 0EFFFFh
:
0E8000h – 0E8FFFh
0E7000h – 0E7FFFh
:
0E0000h – 0E0FFFh
0DF000h – 0DFFFFh
:
0D8000h – 0D8FFFh
0D7000h – 0D7FFFh
:
0D0000h – 0D0FFFh
F25D08QA
individual
16 sectors
unit: 4KB
29
14
28
27
13
26
individual
block unit:
64KB
5
2
4
3
1
2
1
0
0
47
:
40
39
:
32
31
:
24
23
:
16
15
:
8
7
:
0
4KB
:
4KB
4KB
:
4KB
4KB
:
4KB
4KB
:
4KB
4KB
:
4KB
4KB
:
4KB
02F000h – 02FFFFh
:
028000h – 028FFFh
027000h – 027FFFh
:
020000h – 020FFFh
01F000h – 01FFFFh
:
018000h – 018FFFh
017000h – 017FFFh
:
010000h – 010FFFh
00F000h – 00FFFFh
:
008000h – 008FFFh
007000h – 007FFFh
:
000000h – 000FFFh
individual
16 sectors
unit: 4KB
Elite Semiconductor Memory Technology Inc.
Publication Date: Jul. 2013
Revision: 1.1
5/69
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