Standard SRAM, 512KX32, 20ns, CMOS, CQFP68, CERAMIC, QFP-68
参数名称 | 属性值 |
厂商名称 | Cobham Semiconductor Solutions |
零件包装代码 | QFP |
包装说明 | GQFF, |
针数 | 68 |
Reach Compliance Code | unknown |
ECCN代码 | 3A991.B.2.A |
最长访问时间 | 20 ns |
JESD-30 代码 | R-CQFP-F68 |
JESD-609代码 | e0 |
长度 | 24.892 mm |
内存密度 | 16777216 bit |
内存集成电路类型 | STANDARD SRAM |
内存宽度 | 32 |
功能数量 | 1 |
端子数量 | 68 |
字数 | 524288 words |
字数代码 | 512000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 125 °C |
最低工作温度 | -40 °C |
组织 | 512KX32 |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
封装代码 | GQFF |
封装形状 | RECTANGULAR |
封装形式 | FLATPACK, GUARD RING |
并行/串行 | PARALLEL |
认证状态 | Not Qualified |
座面最大高度 | 3.302 mm |
最大供电电压 (Vsup) | 1.9 V |
最小供电电压 (Vsup) | 1.7 V |
标称供电电压 (Vsup) | 1.8 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | AUTOMOTIVE |
端子面层 | TIN LEAD |
端子形式 | FLAT |
端子节距 | 1.27 mm |
端子位置 | QUAD |
宽度 | 24.892 mm |
UT8ER512K32-20WWA | UT8ER512K32-20WCA | UT8ER512K32-20WCC | UT8ER512K32-20WPC | UT8ER512K32-20WWX | |
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描述 | Standard SRAM, 512KX32, 20ns, CMOS, CQFP68, CERAMIC, QFP-68 | Standard SRAM, 512KX32, 20ns, CMOS, CQFP68, CERAMIC, QFP-68 | Standard SRAM, 512KX32, 20ns, CMOS, CQFP68, CERAMIC, QFP-68 | Standard SRAM, 512KX32, 20ns, CMOS, CQFP68, CERAMIC, QFP-68 | Standard SRAM, 512KX32, 20ns, CMOS, CQFP68, CERAMIC, QFP-68 |
厂商名称 | Cobham Semiconductor Solutions | Cobham Semiconductor Solutions | Cobham Semiconductor Solutions | Cobham Semiconductor Solutions | Cobham Semiconductor Solutions |
零件包装代码 | QFP | QFP | QFP | QFP | QFP |
包装说明 | GQFF, | GQFF, | GQFF, | GQFF, | GQFF, |
针数 | 68 | 68 | 68 | 68 | 68 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | 3A991.B.2.A | 3A001.A.2.C | 3A001.A.2.C | 3A991.B.2.A | 3A991.B.2.A |
最长访问时间 | 20 ns | 20 ns | 20 ns | 20 ns | 20 ns |
JESD-30 代码 | R-CQFP-F68 | R-CQFP-F68 | R-CQFP-F68 | R-CQFP-F68 | R-CQFP-F68 |
JESD-609代码 | e0 | e0 | e4 | e4 | e0/e4 |
长度 | 24.892 mm | 24.892 mm | 24.892 mm | 24.892 mm | 24.892 mm |
内存密度 | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit |
内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
内存宽度 | 32 | 32 | 32 | 32 | 32 |
功能数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 68 | 68 | 68 | 68 | 68 |
字数 | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words |
字数代码 | 512000 | 512000 | 512000 | 512000 | 512000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
组织 | 512KX32 | 512KX32 | 512KX32 | 512KX32 | 512KX32 |
封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
封装代码 | GQFF | GQFF | GQFF | GQFF | GQFF |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | FLATPACK, GUARD RING | FLATPACK, GUARD RING | FLATPACK, GUARD RING | FLATPACK, GUARD RING | FLATPACK, GUARD RING |
并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 3.302 mm | 3.302 mm | 3.302 mm | 3.302 mm | 3.302 mm |
最大供电电压 (Vsup) | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V |
最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
表面贴装 | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
端子面层 | TIN LEAD | TIN LEAD | GOLD | GOLD | TIN LEAD/GOLD |
端子形式 | FLAT | FLAT | FLAT | FLAT | FLAT |
端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
端子位置 | QUAD | QUAD | QUAD | QUAD | QUAD |
宽度 | 24.892 mm | 24.892 mm | 24.892 mm | 24.892 mm | 24.892 mm |
最高工作温度 | 125 °C | 125 °C | 125 °C | - | 125 °C |
最低工作温度 | -40 °C | -55 °C | -55 °C | - | -40 °C |
温度等级 | AUTOMOTIVE | MILITARY | MILITARY | - | AUTOMOTIVE |
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