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Datasheet> 器件分类 > 分立半导体> 晶体管> 2SB1181F5TLPQ

2SB1181F5TLPQ: 产品描述Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon; 产品类别分立半导体晶体管; 文件大小103KB，共4页; 制造商ROHM(罗姆半导体); 官网地址https://www.rohm.com/

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2SB1181F5TLPQ概述

Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon

2SB1181F5TLPQ规格参数

参数名称	属性值
包装说明	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknow
ECCN代码	EAR99
最大集电极电流 (IC)	1 A
集电极-发射极最大电压	80 V
配置	SINGLE
最小直流电流增益 (hFE)	82
JESD-30 代码	R-PSSO-G2
元件数量	1
端子数量	2
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	PNP
功耗环境最大值	10 W
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	SINGLE
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	100 MHz
VCEsat-Max	0.4 V
Base Number Matches	1

2SB1181F5TLPQ相似产品对比

	2SB1181F5TLPQ	2SB1181F5TLPR	2SB1181F5TLP	2SB1181F5TLR	2SB1181F5TLQR	2SB1181F5TLQ
描述	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon
包装说明	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最大集电极电流 (IC)	1 A	1 A	1 A	1 A	1 A	1 A
集电极-发射极最大电压	80 V	80 V	80 V	80 V	80 V	80 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	82	82	82	180	120	120
JESD-30 代码	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
元件数量	1	1	1	1	1	1
端子数量	2	2	2	2	2	2
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	PNP	PNP	PNP	PNP	PNP	PNP
功耗环境最大值	10 W	10 W	10 W	10 W	10 W	10 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz	100 MHz
VCEsat-Max	0.4 V	0.4 V	0.4 V	0.4 V	0.4 V	0.4 V
Base Number Matches	1	1	1	1	1	1

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