Small Signal Field-Effect Transistor
参数名称 | 属性值 |
厂商名称 | Supertex |
包装说明 | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code | unknown |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 240 V |
最大漏极电流 (ID) | 0.19 A |
最大漏源导通电阻 | 10 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss) | 20 pF |
JEDEC-95代码 | TO-92 |
JESD-30 代码 | O-PBCY-T3 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
最低工作温度 | -55 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | ROUND |
封装形式 | CYLINDRICAL |
极性/信道类型 | N-CHANNEL |
表面贴装 | NO |
端子形式 | THROUGH-HOLE |
端子位置 | BOTTOM |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
VN2410L-GP005 | VN2410L-GP014 | VN2410L-GP013 | VN2410L-GP002 | VN2410L-GP003 | |
---|---|---|---|---|---|
描述 | Small Signal Field-Effect Transistor | Small Signal Field-Effect Transistor | Small Signal Field-Effect Transistor | Small Signal Field-Effect Transistor | Small Signal Field-Effect Transistor |
厂商名称 | Supertex | Supertex | Supertex | Supertex | Supertex |
包装说明 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 240 V | 240 V | 240 V | 240 V | 240 V |
最大漏极电流 (ID) | 0.19 A | 0.19 A | 0.19 A | 0.19 A | 0.19 A |
最大漏源导通电阻 | 10 Ω | 10 Ω | 10 Ω | 10 Ω | 10 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss) | 20 pF | 20 pF | 20 pF | 20 pF | 20 pF |
JEDEC-95代码 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 |
JESD-30 代码 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
元件数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
表面贴装 | NO | NO | NO | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
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