Supertex inc.
P-Channel Enhancement-Mode
Vertical DMOS FETs
Features
►
►
►
►
►
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
VP2106
General Description
►
Integral source-drain diode
►
High input impedance and high gain
Applications
►
Converters
►
Amplifiers
►
Switches
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
►
Motor controls
►
Power supply circuits
►
Drivers (relays, hammers, solenoids, lamps, memories,
displays, bipolar transistors, etc.)
Ordering Information
Part Number
VP2106N3-G
VP2106N3-G P002
VP2106N3-G P003
VP2106N3-G P005
VP2106N3-G P013
VP2106N3-G P014
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Package Option
TO-92
Packing
1000/Bag
Product Summary
BV
DSS
/BV
DGS
-60V
R
DS(ON)
(max)
I
D(ON)
(min)
12Ω
-500mA
TO-92
2000/Reel
Pin Configuration
DRAIN
SOURCE
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
GATE
TO-92
Product Marking
SiVP
2106
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
Typical Thermal Resistance
Package
TO-92
θ
ja
132
O
C/W
Package may or may not include the following marks: Si or
Doc.# DSFP-VP2106
C082313
Supertex inc.
www.supertex.com
VP2106
Thermal Characteristics
Package
TO-92
(continuous)
I
D
†
(pulsed)
I
D
Power Dissipation
@T
C
= 25
O
C
I
DR
†
-250mA
I
DRM
-800mA
-250mA
-800mA
1.0W
Notes:
† I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(T
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Parameter
Gate threshold voltage
A
= 25
O
C unless otherwise specified)
Min
-60
-1.5
-
-
-
Typ
-
-
5.8
-1.0
-
-
-1.0
11
9.0
0.55
200
45
22
3.0
4.0
5.0
5.0
4.0
-1.2
400
Max
-
-3.5
6.5
-100
-10
-1.0
-
15
12
1.0
-
60
30
8.0
5.0
8.0
9.0
8.0
-2.0
-
Units
V
V
nA
µA
mA
A
Ω
%/
O
C
Conditions
V
GS
= 0V, I
D
= -1.0mA
V
GS
= V
DS
, I
D
= -1.0mA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125°C
V
GS
= -10V, V
DS
= -25V
V
GS
= -5.0V, I
D
= -100mA
V
GS
= -10V, I
D
= -500mA
V
GS
= -10V, I
D
= -500mA
V
GS
= 0V,
V
DS
= -25V,
f = 1.0MHz
V
DD
= -25V,
I
D
= -500mA,
R
GEN
= 25Ω
Drain-to-source breakdown voltage
Change in V
GS(th)
with temperature
Gate body leakage
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state resistance
Change in R
DS(ON)
with temperature
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
mV/
O
C V
GS
= V
DS
, I
D
= -1.0mA
-
-0.5
-
-
-
150
-
-
-
-
-
-
-
-
-
mmho V
DS
= -25V, I
D
= -500mA
pF
ns
V
ns
V
GS
= 0V, I
SD
= -500mA
V
GS
= 0V, I
SD
= -500mA
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
INPUT
-10V
10%
90%
t
(OFF)
t
r
t
d(OFF)
t
f
Pulse
Generator
R
GEN
D.U.T.
INPUT
t
(ON)
t
d(ON)
0V
OUTPUT
R
L
VDD
OUTPUT
VDD
90%
10%
90%
10%
Doc.# DSFP-VP2106
C082313
2
Supertex inc.
www.supertex.com
VP2106
Typical Performance Curves
-1.1
BV
DSS
Variation with Temperature
20
On-Resistance vs. Drain Current
16
BV
DSS
(normalized)
12
V
GS
= -5.0V
R
DS(ON)
(ohms)
8.0
-1.0
6.0
V
GS
= -10V
4.0
2.0
-0.9
-50
0
50
100
150
0
0
-0.2
-0.4
-0.6
-0.8
-1.0
T
j
( C)
O
I
D
(amperes)
-1.0
Transfer Characteristics
V
DS
= -25V
T
A
= -55
O
C
V
(th)
and R
DS
Variation with Temperature
2.0
1.4
-0.8
-0.6
V
GS(th)
(normalized)
1.2
1.2
1.0
0.8
0.8
-0.4
25
O
C
-0.2
125
O
C
V
(th)
@ 1.0mA
0.4
0.6
0
0
-2.0
-4.0
-6.0
-8.0
-10
-50
0
50
100
0
150
V
GS
(volts)
T
j
(
O
C)
Capacitance vs. Drain-to-Source Voltage
100
-10
Gate Drive Dynamic Characteristics
f = 1.0MHz
-8.0
75
V
DS
= -10V
C (picofarads)
50
V
GS
(volts)
-6.0
V
DS
= -40V
-4.0
101 pF
C
ISS
25
C
OSS
-2.0
C
RSS
0
0
-10
-20
-30
-40
0
0
35 pF
1.0
2.0
V
DS
(volts)
Q
G
(nanocoulombs)
Doc.# DSFP-VP2106
C082313
3
Supertex inc.
www.supertex.com
R
DS(ON)
(normalized)
R
DS(ON)
@ -10V. 0.5A
1.6
I
D
(amperes)
VP2106
Typical Performance Curves
(cont.)
-2.0
Output Characteristics
-1.0
Saturation Characteristics
V
GS
= -10V
-1.6
-0.8
-9V
I
D
(amperes)
-1.2
I
D
(amperes)
V
GS
= -10V
-0.6
-8V
-7V
-0.8
-9V
-8V
-7V
-0.4
-6V
-5V
-4V
-0.4
-6V
-5V
-0.2
0
-4V
0
-10
-20
-30
-40
-50
0
-3V
0
-2.0
-4.0
-6.0
-8.0
-10
V
DS
(volts)
V
DS
(volts)
250
Transconductance vs. Drain Current
V
DS
= 25V
T
A
= -55
O
C
Power Dissipation vs. Ambient Temperature
1.0
200
25
O
C
TO-92
G
FS
(millisiemens)
P
D
(watts)
-10
150
0.5
100
125
O
C
50
0
0
-0.2
-0.4
-0.6
-0.8
0
0
25
50
75
100
125
150
I
D
(amperes)
T
A
(
O
C)
-1.0
Maximum Rated Safe Operating Area
TO-92 (pulsed)
1.0
Thermal Response Characteristics
Thermal Resistance (normalized)
TO-92 (DC)
-0.1
0.8
I
D
(amperes)
0.6
0.4
-0.01
0.2
TO-92
P
D
= 1.0W
T
A
= 25
O
C
-0.001
-0.1
T
A
= 25
O
C
-1.0
V
DS
(volts)
-10
-100
0
0.001
0.01
0.1
1.0
10
t
P
(seconds)
Doc.# DSFP-VP2106
C082313
4
Supertex inc.
www.supertex.com
VP2106
3-Lead TO-92 Package Outline (N3)
D
A
Seating
Plane
1
2
3
L
b
e1
e
c
Front View
Side View
E1
E
1
2
3
Bottom View
Symbol
Dimensions
(inches)
MIN
NOM
MAX
A
.170
-
.210
b
.014
†
-
.022
†
c
.014
†
-
.022
†
D
.175
-
.205
E
.125
-
.165
E1
.080
-
.105
e
.095
-
.105
e1
.045
-
.055
L
.500
-
.610*
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO92N3, Version E041009.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html.)
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
(website: http//www.supertex.com)
©2013
Supertex inc.
All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-VP2106
C082313
5
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
Supertex inc.
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