MDD200-22N1
High Voltage Standard Rectifier Module
V
RRM
I
FAV
V
F
=
2x 2200 V
=
=
224 A
1.07 V
Phase leg
Part number
MDD200-22N1
Backside: isolated
2
1
3
Features / Advantages:
●
Package with DCB ceramic
●
Improved temperature and power cycling
●
Planar passivated chips
●
Very low forward voltage drop
●
Very low leakage current
Applications:
●
Diode for main rectification
●
For single and three phase
bridge configurations
●
Supplies for DC power equipment
●
Input rectifiers for PWM inverter
●
Battery DC power supplies
●
Field supply for DC motors
Package:
Y4
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Height: 30 mm
●
Base plate: DCB ceramic
●
Reduced weight
●
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160408c
© 2016 IXYS all rights reserved
MDD200-22N1
Rectifier
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 150 °C
d = 0.5
T
VJ
= 150 °C
min.
typ.
max. non-repetitive reverse blocking voltage
max. Unit
2300
V
2200
1
20
1.16
1.39
1.07
1.36
224
350
0.80
0.6
V
mA
mA
V
V
V
V
A
A
V
mΩ
K/W
960
10.5
11.3
8.93
9.64
W
kA
kA
kA
kA
V
R
= 2200 V
V
R
= 2200 V
I
F
= 300 A
I
F
= 600 A
I
F
= 300 A
I
F
= 600 A
forward voltage drop
I
FAV
I
F(RMS)
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
average forward current
RMS forward current
threshold voltage
slope resistance
T
C
= 100 °C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0.13 K/W
0.08
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 150 °C
V
R
= 0 V
T
VJ
= 25°C
230
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
551.3 kA²s
535.0 kA²s
398.3 kA²s
386.6 kA²s
pF
C
J
junction capacitance
V
R
= 1100 V; f = 1 MHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160408c
© 2016 IXYS all rights reserved
MDD200-22N1
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
Y4
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
300
150
125
125
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
150
2.25
4.5
14.0
16.0
10.0
16.0
3600
3000
2.75
5.5
Date Code (DC)
+
Production
Index (PI)
Circuit
yywwAA
Part Number
Lot.No: xxxxxx
Data Matrix:
part no.
(1-19), DC +
PI
(20-25),
lot.no.#
(26-31),
blank
(32),
serial no.#
(33-36)
Ordering
Standard
Ordering Number
MDD200-22N1
Marking on Product
MDD200-22N1
Delivery Mode
Box
Quantity
6
Code No.
500701
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Rectifier
* on die level
T
VJ
= 150 °C
V
0 max
R
0 max
0.8
0.4
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160408c
© 2016 IXYS all rights reserved
MDD200-22N1
Outlines Y4
2
1
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160408c
© 2016 IXYS all rights reserved
MDD200-22N1
Rectifier
600
500
400
10000
50 Hz
80 % V
RRM
T
VJ
= 45°C
T
VJ
= 125°C
10
6
V
R
= 0 V
8000
I
FSM
6000
I
F
300
It
[A
2
s]
2
[A]
4000
T
VJ
= 45°C
[A]
200
100
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
2000
0
0,0
0,5
1,0
1,5
2,0
0
0,001
0,01
0,1
s
10
5
1
1
2
10
V
F
[V]
Fig. 1 Forward current versus
voltage drop
400
t [s]
Fig. 2 Surge overload current
I
FSM
: Crest value, t: duration
400
R
thKA
K/W
t [ms]
Fig. 3 I t versus time (1-10 ms)
300
P
tot
200
0.1
0.2
0.3
0.5
0.8
1.2
2.0
300
DC
180 ° sin
120 °
60 °
30 °
I
FAVM
[A]
200
[W]
100
DC
180 ° sin
120 °
60 °
30 °
100
0
0
100
200
300
0
25
50
75
100
125
150
0
0
25
50
75
100 125 150
I
FAVM
[A]
Fig.4 Power dissipation versus forward current
and ambient temperature (per diode)
1600
T
A
[°C]
T
C
[°C]
Fig. 5 Maximum forward current
at case temperature
2000
R
thKA
K/W
1200
P
tot
800
Circuit
B6
0.02
0.04
0.07
0.10
0.15
0.20
0.30
T
C
= 85°C
T
VJ
= 150°C
1600
1200
I
FRMS
800
[W]
400
[A]
400
0
0
200
400
600
0
25
50
75
100
125
150
0
0,001
0,01
0,1
1
10
I
dAVM
[A]
T
A
[°C]
t [s]
Fig. 7 Rated RMS current versus
time (360° conduction)
20160408c
Fig.6 Three phase rectifier bridge: Power dissipation versus
direct output current and ambient temperature
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
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