SMM4F
High junction temperature Transil™
Features
■
Typical peak pulse power:
– 400 W (10/1000 µs)
– 2.4 kW (8/20 µs)
Stand off voltage range: from 5 V to 33 V
Unidirectional types
Low leakage current:
– 0.2 µA at 25 °C
– 1 µA at 85 °C
Operating T
j
max: 175 °C
JEDEC registered package outline
RoHS package
Halogen free molding compound
K
STmite flat
(DO222-AA)
A
■
■
■
■
■
■
■
Complies with the following standards
■
IEC 61000-4-2 level 4:
– 15 kV (air discharge)
– 8 kV (contact discharge)
MIL STD 883G-Method 3015-7: class3
– 25 kV (human body model)
Description
The SMM4F Transil series has been designed to
protect sensitive equipment against electro-static
discharges according to IEC 61000-4-2, MIL STD
883 Method 3015, and electrical over stress such
as IEC 61000-4-4 and 5. They are generally for
surges below 400 W 10/1000 µs.
This planar technology makes it compatible with
high-end equipment and SMPS where low
leakage current and high junction temperature are
required to provide reliability and stability over
time. Their low clamping voltages provide a better
safety margin to protect sensitive circuits with
extended life time expectancy.
Packaged in STmite flat, this minimizes PCB
space consumption (footprint in accordance with
IPC 7531 standard).
■
TM: Transil is a trademark of STMicroelectronics
December 2007
Rev 2
1/10
www.st.com
10
Characteristics
SMM4F
1
Characteristics
Table 1.
Symbol
V
PP
P
PP
P
I
FSM
T
stg
T
j
T
L
Absolute ratings (T
amb
= 25 °C)
Parameter
Peak pulse voltage (IEC 61000-4-2 contact discharge)
Peak pulse power dissipation
(1)
Power dissipation on infinite heatsink
Non repetitive surge peak forward current
for unidirectional types
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10 s
T
j
initial = T
amb
T
amb
= 125 °C
t
p
= 10 ms
T
j
initial = T
amb
Value
30
400
2.5
30
-65 to +175
-55 to +175
260
Unit
kV
W
W
A
°C
°C
°C
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2.
Symbol
R
th(j-l)
R
th(j-a)
Thermal resistances
Parameter
Junction to leads
Junction to ambient on PCB with recommended pad layout
Value
20
°C/W
250
Unit
Table 3.
Symbol
V
RM
V
BR
I
R
V
CL
I
RM
I
PP
αT
V
F
R
D
Electrical characteristics - parameter definitions (T
amb
= 25 °C)
Parameter
Stand-off voltage
Breakdown voltage
Breakdown current
Clamping voltage
Leakage current @ V
RM
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
Dynamic resistance
I
PP
V
CL
V
BR
V
RM
I
RM
I
R
V
F
V
I
F
I
2/10
SMM4F
Table 4.
Electrical characteristics - parameter values (T
amb
= 25 °C)
I
RM
max@V
RM
Type
25 °C 85 °C
µA
SMM4F5.0A
SMM4F6.0A
SMM4F6.5A
SMM4F8.5A
SMM4F10A
SMM4F12A
SMM4F13A
SMM4F15A
SMM4F18A
SMM4F20A
SMM4F24A
SMM4F26A
SMM4F28A
SMM4F33A
10
10
10
10
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
50
50
50
50
1
1
1
1
1
1
1
1
1
1
V
min
V
BR
@I
R
(1)
Characteristics
V
CL
@I
PP
R
D(2)
V
CL
@I
PP
R
D(2)
10/1000 µs 10/1000 µs 8/20 µs 8/20 µs
max
mA
V
9.2
A
43.5
Ω
0.047
0.076
0.093
0.141
0.187
0.259
0.309
0.335
0.436
0.600
1.00
1.18
1.34
1.76
max
V
A
Ω
0.04
0.04
0.04
0.07
0.09
0.12
0.13
0.19
0.27
0.33
0.47
0.51
0.62
0.87
αT
(3)
max
10-4/°C
5.7
5.9
6.1
7.3
7.8
8.3
8.4
8.8
9.2
9.4
9.6
9.7
9.8
10.0
typ max
V
5.0 6.46 6.80 7.14 10
13.4 174
13.7 170
14.5 160
19.5 124
21.7 106
25.3 91
27.2 85
32.5 71
39.3 59
42.8 54
50
46
6.0 6.65 7.00 7.35 10 10.3 38.8
6.5 7.13 7.50 7.88 10 11.2 37.5
8.5
9.5
10.0 10.5
1
1
1
1
1
1
1
1
1
1
1
14.4 27.7
17.0 23.5
19.9 20.1
21.5 18.6
24.4 16.4
29.2 14.0
32.4 12.0
38.9
42.1
45.4
53.3
9.5
9.0
8.0
7.0
10 11.4 12.0 12.6
12 13.3 14.0 14.7
13 14.3 15.0 15.8
15 17.1 18.0 18.9
18 20.9 22.0 23.1
20 22.8 24.0 25.2
24 26.6 28.01 29.4
26 28.5 30.0 31.5
28 31.4 33.0 34.7
33 37.1 39.0 41.0
53.5 43
59.0 39
69.7 33
1. Pulse test: t
p
<50ms.
2. To calculate maximum clamping voltage at other surge currents, use the following formula V
CLmax
= R
D
x I
PP
+ V
BRmax
3. To calculate V
BR
versus junction temperature, use the following formula: V
BR
@ T
j
= V
BR
@ 25 °C x (1 +
αT
x (T
j
- 25))
Figure 1.
Definition of I
PP
pulse
%I
PP
100
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
50
0
t
r
t
p
t
3/10
Characteristics
SMM4F
Figure 2.
Peak power dissipation versus
initial junction temperature
Figure 3.
Peak pulse power versus
exponential pulse duration
(T
j
initial = 25 °C)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
PPP[T j initial] / PPP[T j initial = 2 5 °C]
10.0
P
PP
(kW)
T
j
initial = 25 °C
1.0
T
j initial
(°C)
0.1
t
p
(ms)
125
150
175
200
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0
25
50
75
100
Figure 4.
Clamping voltage versus peak pulse current
(exponential waveform, maximum values)
IPP(A)
1000
T
j
initial=25 °C
SMM4F5.0A
SMM4F15A
100
SMM4F24A
SMM4F33A
10
1
tp = 8/20 µs
tp = 10/1000 µs
VCL(V)
0
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
4/10
SMM4F
Characteristics
Figure 5.
Junction capacitance versus
reverse applied voltage (typical
values)
Figure 6.
Peak forward voltage drop versus
peak forward current (typical
values)
10000
C(pF)
F=1 MHz
V
OSC
=30 mV
RMS
T
j
=25 °C
1.0E+02
I
FM
(A)
1.0E+01
1000
SMM4F5.0A
T
j
=125 °C
SMM4F15A
SMM4F24A
1.0E+00
100
SMM4F33A
1.0E-01
T
j
=25 °C
V
R
(V)
10
1
10
100
V
FM
(V)
1.0E-02
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Figure 7.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (printed
ciruit board FR4, S
Cu
= 1 cm
2
)
Figure 8.
Thermal resistance junction to
ambient versus copper surface
under each lead (printed circuit
board FR4, e
Cu
= 35 µm)
1.00
Z
th(j-a)
/R
th(j-a)
On recommended pad
layout
200
180
160
R
th(j-a)
(°C/W)
0.10
140
120
100
80
0.01
t
p
(S)
0.00
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
60
40
0.0
0.2
0.4
0.6
0.8
S
CU
(cm
2
)
1.0
1.2
1.4
1.6
1.8
2.0
2.2
Figure 9.
Leakage current versus junction temperature (typical values)
1.E+04
I
R
(nA)
1.E+03
V
BR
≤11.7V
1.E+02
1.E+01
V
BR
>11.7V
1.E+00
T
j
(°C)
1.E-01
25
50
75
100
125
150
V
R
=V
RM
175
5/10
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