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SBL3050PT

产品描述Rectifier Diode,
产品类别分立半导体    二极管   
文件大小87KB,共2页
制造商EIC [EIC discrete Semiconductors]
标准  
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SBL3050PT概述

Rectifier Diode,

SBL3050PT规格参数

参数名称属性值
是否无铅不含铅
厂商名称EIC [EIC discrete Semiconductors]
Reach Compliance Codecompliant
ECCN代码EAR99

SBL3050PT文档预览

Certificate TH97/10561QM
Certificate TW00/17276EM
SBL3030PT ~ SBL3060PT
PRV : 30 ~ 60 Volts
Io : 30 Amperes
FEATURES :
* Low power loss, high efficiency
* High current capability, low forward voltage drop
* High surge capability
* Guardring for overvoltage protection
* For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
* Pb / RoHS Free
DUAL SCHOTTKY
BARRIER RECTIFIERS
TO-247AD (TO-3P)
0.245(6.2)
0.225(5.7)
0.203(5.16)
0.645 (16.4)
0.193(4.90)
0.625 (15.9) 0.323 (8.2)
0.313 (7.9)
30°
0.170(4.3)
0.840(21.3)
0.820(20.8)
1
2
3
0.160(4.1)
0.140(3.5)
0.127(3.22)
0.177(2.97)
PIN 1
PIN 3
0.225(5.7)
0.205(5.2)
0.048(1.22)
0.044(1.12)
PIN 2
CASE
0.030(0.76)
0.020(0.51)
0.118(3.0)
0.106(2.7)
0.142(3.6)
0.138(3.5)
0.078 REF
(1.98)
0.795(20.2)
0.775(19.7)
MECHANICAL DATA :
*
*
*
*
Case : TO-247AD Molded plastic
Polarity : As marked on the body
Mounting position : Any
Weight : 5.6 grams
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified.
PARAMETER
Maximum Repetitive Peak Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum RMS Reverse Voltage
Maximum Average Forward Rectified Current at T
C
= 95 °C
(1)
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method) Per leg
Maximum Forward Voltage at I
F
= 15A, T
C
= 25°C
Maximum Instantaneous Reverse Current
at Rate DC Blocking Voltage
Typical Total Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating Junction and Storage Temperature Range
Notes :
(1) Thermal resistance junction to case mounted on heatsink.
(2) Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
SYMBOL
V
RRM
V
RWM
V
DC
V
R(RMS)
I
F(AV)
I
FSM
V
F
I
R
C
T
R
ӨJC
T
J
, T
STG
SBL30 SBL30 SBL30 SBL30 SBL30 SBL30
UNIT
30PT 35PT 40PT 45PT 50PT 60PT
30
30
30
21
35
35
35
24.5
40
40
40
28
30
275
0.55
1.0
75
1100.0
1.5
-65 to + 150
0.70
45
45
45
31.5
50
50
50
35
60
60
60
42
V
V
V
V
A
A
V
mA
pF
°C/W
°C
T
C
= 25 °C
T
C
= 100 °C
Page 1 of 2
Rev. 02 : September 5, 2007
Certificate TH97/10561QM
Certificate TW00/17276EM
RATING AND CHARACTERISTIC CURVES ( SBL3030PT ~ SBL3060PT )
FIG.1 - FORWARD CURRENT DERATING CURVE
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
300
25
250
20
PEAK FORWARD SURGE
CURRENT, (A)
AVERAGE FORWARD
CURRENT, (A)
200
15
150
10
100
5
50
8.3 ms single half sine-wave
(JEDEC Method)
1
10
100
0
0
25
50
75
100
125
150
0
CASE TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS PER ELEMENT
100
SBL3030PT - SBL3045PT
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER ELEMENT
100
INSTANTANEOUS FORWARD
CURRENT, (A)
T
J
= 100
°C
10
SBL3050PT - SBL3060PT
INSTANTANEOUS REVERSE
CURRENT, (A)
10
T
J
= 75
°C
1.0
1.0
T
J
= 25
°C
Pulse Width = 300
μs
2% Duty Cycle
0.1
0.2
0.4
0.6
0.8
1.0
0.1
T
J
= 25
°C
INSTANTANEOUS FORWARD
VOLTAGE, (V)
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
Page 1 of 2
Rev. 02 : September 5, 2007

SBL3050PT相似产品对比

SBL3050PT SBL3045PT SBL3035PT SBL3060PT
描述 Rectifier Diode, Rectifier Diode, Rectifier Diode, Rectifier Diode,
是否无铅 不含铅 不含铅 不含铅 不含铅
厂商名称 EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compliant compliant compli compli
ECCN代码 EAR99 - EAR99 EAR99

 
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