88A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZK, TO-263, 3 PIN
参数名称 | 属性值 |
是否无铅 | 不含铅 |
是否Rohs认证 | 符合 |
厂商名称 | Renesas(瑞萨电子) |
零件包装代码 | D2PAK |
包装说明 | SMALL OUTLINE, R-PSSO-G2 |
针数 | 4 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
雪崩能效等级(Eas) | 450 mJ |
外壳连接 | DRAIN |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 75 V |
最大漏极电流 (ID) | 88 A |
最大漏源导通电阻 | 0.0085 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码 | TO-263AB |
JESD-30 代码 | R-PSSO-G2 |
元件数量 | 1 |
端子数量 | 2 |
工作模式 | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | RECTANGULAR |
封装形式 | SMALL OUTLINE |
峰值回流温度(摄氏度) | 260 |
极性/信道类型 | N-CHANNEL |
最大脉冲漏极电流 (IDM) | 352 A |
认证状态 | Not Qualified |
表面贴装 | YES |
端子形式 | GULL WING |
端子位置 | SINGLE |
处于峰值回流温度下的最长时间 | NOT SPECIFIED |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
NP88N075KUE-AZ | NP88N075EUE | NP88N075CUE | NP88N075DUE | NP88N075DUE-AZ | NP88N075KUE-E2-AZ | |
---|---|---|---|---|---|---|
描述 | 88A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZK, TO-263, 3 PIN | 88A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, MP-25ZJ, TO-263, 3 PIN | 88A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN | 88A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN | 88A, 75V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, MP-25 FIN CUT, 3 PIN | TRANSISTOR,MOSFET,N-CHANNEL,75V V(BR)DSS,88A I(D),TO-263AB |
是否Rohs认证 | 符合 | 不符合 | 不符合 | 不符合 | 符合 | 符合 |
厂商名称 | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) | Renesas(瑞萨电子) |
Reach Compliance Code | compliant | compliant | unknown | compliant | compliant | compliant |
配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | Single |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
表面贴装 | YES | YES | NO | NO | NO | YES |
是否无铅 | 不含铅 | 含铅 | 含铅 | 含铅 | - | - |
零件包装代码 | D2PAK | D2PAK | TO-220AB | TO-262AA | TO-262AA | - |
包装说明 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 | IN-LINE, R-PSIP-T3 | IN-LINE, R-PSIP-T3 | - |
针数 | 4 | 4 | 3 | 3 | 3 | - |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | - |
雪崩能效等级(Eas) | 450 mJ | 450 mJ | 450 mJ | 450 mJ | 450 mJ | - |
外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | - |
最小漏源击穿电压 | 75 V | 75 V | 75 V | 75 V | 75 V | - |
最大漏极电流 (ID) | 88 A | 88 A | 88 A | 88 A | 88 A | - |
最大漏源导通电阻 | 0.0085 Ω | 0.0085 Ω | 0.0085 Ω | 0.0085 Ω | 0.0085 Ω | - |
JEDEC-95代码 | TO-263AB | TO-263AB | TO-220AB | TO-262AA | TO-262AA | - |
JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 | R-PSFM-T3 | R-PSIP-T3 | R-PSIP-T3 | - |
元件数量 | 1 | 1 | 1 | 1 | 1 | - |
端子数量 | 2 | 2 | 3 | 3 | 3 | - |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | FLANGE MOUNT | IN-LINE | IN-LINE | - |
峰值回流温度(摄氏度) | 260 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 260 | - |
最大脉冲漏极电流 (IDM) | 352 A | 352 A | 352 A | 352 A | 352 A | - |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - |
端子形式 | GULL WING | GULL WING | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | - |
端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | - |
处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | - |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | - |
最大漏极电流 (Abs) (ID) | - | 88 A | 88 A | 88 A | 88 A | 88 A |
最高工作温度 | - | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
最大功率耗散 (Abs) | - | 288 W | 288 W | 288 W | 288 W | 288 W |
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