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CY7C1347G_13

产品描述4-Mbit (128 K x 36) Pipelined Sync SRAM
文件大小550KB,共26页
制造商Cypress(赛普拉斯)
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CY7C1347G_13概述

4-Mbit (128 K x 36) Pipelined Sync SRAM

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CY7C1347G
4-Mbit (128 K × 36) Pipelined Sync SRAM
4-Mbit (128 K × 36) Pipelined Sync SRAM
Features
Functional Description
The CY7C1347G is a 3.3 V, 128 K × 36 synchronous pipelined
SRAM designed to support zero-wait-state secondary cache
with minimal glue logic. CY7C1347G I/O pins can operate at
either the 2.5 V or the 3.3 V level. The I/O pins are 3.3 V tolerant
when V
DDQ
= 2.5 V. All synchronous inputs pass through input
registers controlled by the rising edge of the clock. All data
outputs pass through output registers controlled by the rising
edge of the clock. Maximum access delay from the clock rise is
2.6 ns (250 MHz device). CY7C1347G supports either the
interleaved burst sequence used by the Intel Pentium processor
or a linear burst sequence used by processors such as the
PowerPC. The burst sequence is selected through the MODE
pin. Accesses can be initiated by asserting either the address
strobe from processor (ADSP) or the address strobe from
controller (ADSC) at clock rise. Address advancement through
the burst sequence is controlled by the ADV input. A 2-bit on-chip
wraparound burst counter captures the first address in a burst
sequence and automatically increments the address for the rest
of the burst access.
Byte write operations are qualified with the four Byte Write Select
(BW
[A:D]
) inputs. A global write enable (GW) overrides all byte
write inputs and writes data to all four bytes. All writes are
conducted with on-chip synchronous self timed write circuitry.
Three synchronous chip Selects (CE
1
, CE
2
, CE
3
) and an
asynchronous output enable (OE) provide for easy bank
selection and output tristate control. To provide proper data
during depth expansion, OE is masked during the first clock of a
read cycle when emerging from a deselected state.
Fully registered inputs and outputs for pipelined operation
128 K × 36 common I/O architecture
3.3 V core power supply (V
DD
)
2.5- / 3.3-V I/O power supply (V
DDQ
)
Fast clock to output times: 2.6 ns (for 250 MHz device)
User selectable burst counter supporting Intel Pentium
interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self timed writes
Asynchronous output enable
Offered in Pb-free 100-pin TQFP, Pb-free 119-ball BGA
package
“ZZ” sleep mode option and stop clock option
Available in commercial temperature range
Selection Guide
Description
Maximum access time
Maximum operating current
Maximum CMOS standby current
250 MHz
2.6
325
40
200 MHz
2.8
265
40
166 MHz
3.5
240
40
133 MHz
4.0
225
40
Unit
ns
mA
mA
Errata:
For information on silicon errata, see
"Errata"
on page 23. Details include trigger conditions, devices affected, and proposed workaround.
Cypress Semiconductor Corporation
Document Number: 38-05516 Rev. *N
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised June 25, 2013

 
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