CY62157ESL MoBL
®
8-Mbit (512 K × 16) Static RAM
8-Mbit (512 K × 16) Static RAM
Features
■
■
■
Very high speed: 45 ns
Wide voltage range: 2.2 V to 3.6 V and 4.5 V to 5.5 V
Ultra low standby power
❐
Typical Standby current: 2
A
❐
Maximum Standby current: 8
A
Ultra low active power
❐
Typical active current: 1.8 mA at f = 1 MHz
Easy memory expansion with CE and OE features
Automatic power down when deselected
Complementary metal oxide semiconductor (CMOS) for
optimum speed and power
Available in Pb-free 44-pin thin small outline package (TSOP) II
package
addresses are not toggling. Place the device into standby mode
when deselected (CE HIGH or both BHE and BLE are HIGH).
The input or output pins (I/O
0
through I/O
15
) are placed in a high
impedance state when the device is deselected (CE HIGH), the
outputs are disabled (OE HIGH), both the Byte High Enable and
the Byte Low Enable are disabled (BHE, BLE HIGH), or during
an active write operation (CE LOW and WE LOW).
To write to the device, take Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from I/O pins (I/O
0
through I/O
7
) is written into the location
specified on the address pins (A
0
through A
18
). If Byte High
Enable (BHE) is LOW, then data from I/O pins (I/O
8
through
I/O
15
) is written into the location specified on the address pins
(A
0
through A
18
).
To read from the device, take Chip Enable (CE) and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If
Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appear on I/O
0
to I/O
7
. If
Byte High Enable (BHE) is LOW, then data from memory
appears on I/O
8
to I/O
15
. See the
Truth Table on page 11
for a
complete description of read and write modes.
The CY62157ESL device is suitable for interfacing with
processors that have TTL I/P levels. It is not suitable for
processors that require CMOS I/P levels. Please see
Electrical
Characteristics on page 4
for more details and suggested
alternatives.
■
■
■
■
■
Functional Description
The CY62157ESL is a high performance CMOS static RAM
organized as 512K words by 16 bits. This device features
advanced circuit design to provide ultra low active current. This
is ideal for providing More Battery Life (MoBL
®
) in portable
applications. The device also has an automatic power down
feature that significantly reduces power consumption when
Logic Block Diagram
DATA IN DRIVERS
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
ROW DECODER
512 K × 16
RAM Array
SENSE AMPS
I/O
0
–I/O
7
I/O
8
–I/O
15
COLUMN DECODER
Power Down
Circuit
CE
BHE
WE
CE
OE
BLE
A
11
A
12
A
13
A
15
BLE
A
14
A
16
A
17
A
18
BHE
Cypress Semiconductor Corporation
Document Number: 001-43141 Rev. *E
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised June 4, 2013
CY62157ESL MoBL
®
Contents
Pin Configurations ........................................................... 3
Product Portfolio .............................................................. 3
Maximum Ratings ............................................................. 4
Operating Range ............................................................... 4
Electrical Characteristics ................................................. 4
Capacitance ...................................................................... 5
Thermal Resistance .......................................................... 5
AC Test Loads and Waveforms ....................................... 5
Data Retention Characteristics ....................................... 6
Data Retention Waveform ................................................ 6
Switching Characteristics ................................................ 7
Switching Waveforms ...................................................... 8
Truth Table ...................................................................... 11
Ordering Information ...................................................... 12
Ordering Code Definitions ......................................... 12
Package Diagram ............................................................ 13
Acronyms ........................................................................ 14
Document Conventions ................................................. 14
Units of Measure ....................................................... 14
Document History Page ................................................. 15
Sales, Solutions, and Legal Information ...................... 17
Worldwide Sales and Design Support ....................... 17
Products .................................................................... 17
PSoC Solutions ......................................................... 17
Document Number: 001-43141 Rev. *E
Page 2 of 17
CY62157ESL MoBL
®
Pin Configurations
Figure 1. 44-pin TSOP II pinout (Top View)
A
4
A
3
A
2
A
1
A
0
CE
I/O
0
I/O
1
I/O
2
I/O
3
V
CC
V
SS
I/O
4
I/O
5
I/O
6
I/O
7
WE
A
18
A
17
A
16
A
15
A
14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
5
A
6
A
7
OE
BHE
BLE
I/O
15
I/O
14
I/O
13
I/O
12
V
SS
V
CC
I/O
11
I/O
10
I/O
9
I/O
8
A
8
A
9
A
10
A
11
A
12
A
13
Product Portfolio
Power Dissipation
Product
Range
V
CC
Range (V)
[1]
Speed
(ns)
45
Operating I
CC
, (mA)
f = 1MHz
Typ
[2]
CY62157ESL
Industrial 2.2 V–3.6 V and 4.5 V–5.5 V
1.8
Max
3
f = f
max
Typ
[2]
18
Max
25
Standby, I
SB2
(A)
Typ
[2]
2
Max
8
Notes
1. Datasheet specifications are not guaranteed for V
CC
in the range of 3.6 V to 4.5 V.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= 3 V, and V
CC
= 5 V, T
A
= 25 °C.
Document Number: 001-43141 Rev. *E
Page 3 of 17
CY62157ESL MoBL
®
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ............................... –65 °C to +150 °C
Ambient Temperature with
Power Applied ......................................... –55 °C to +125 °C
Supply Voltage to Ground Potential ...............–0.5 V to 6.0 V
DC Voltage Applied to Outputs
in High Z State
[3, 4]
........................................–0.5 V to 6.0 V
DC Input Voltage
[3, 4]
....................................–0.5 V to 6.0 V
Output Current into Outputs (LOW) ............................ 20 mA
Static Discharge Voltage
(MIL-STD-883, Method 3015) .................................. >2001 V
Latch up Current ..................................................... >200 mA
Operating Range
Device
CY62157ESL
Range
Industrial
Ambient
Temperature
–40 °C to +85 °C
V
CC
[5]
2.2 V–3.6 V,
and
4.5 V–5.5 V
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
Description
Output high voltage
Test Conditions
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
4.5 < V
CC
< 5.5
4.5 < V
CC
< 5.5
V
OL
Output low voltage
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
4.5 < V
CC
< 5.5
V
IH
Input high voltage
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
4.5 < V
CC
< 5.5
V
IL
Input low voltage
2.2 < V
CC
< 2.7
2.7 < V
CC
< 3.6
4.5 < V
CC
< 5.5
I
IX
I
OZ
I
CC
Input leakage current
Output leakage current
V
CC
operating supply current
GND < V
I
< V
CC
GND < V
O
< V
CC
, Output Disabled
f = f
max
= 1/t
RC
f = 1 MHz
I
SB1[8]
Automatic CE power down
current – CMOS inputs
V
CC
= V
CCmax
I
OUT
= 0 mA,
CMOS levels
I
OH
= –0.1 mA
I
OH
= –1.0 mA
I
OH
= –1.0 mA
I
OH
= –0.1 mA
I
OL
= 0.1 mA
I
OL
= 2.1 mA
I
OL
= 2.1 mA
45 ns
Min
2.0
2.4
2.4
–
–
–
–
1.8
2.2
2.2
–0.3
–0.3
–0.5
–1
–1
–
–
–
Typ
[6]
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
18
1.8
2
Max
–
–
–
3.4
[7]
0.4
0.4
0.4
V
CC
+ 0.3
V
CC
+ 0.3
V
CC
+ 0.5
0.6
0.8
0.8
+1
+1
25
3
8
A
A
A
mA
V
V
V
Unit
V
CE > V
CC
0.2
V,
V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V,
f = f
max
(address and data only),
f = 0 (OE, BHE, BLE and WE),
V
CC
= V
CC(max)
CE > V
CC
– 0.2 V,
V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V,
f = 0, V
CC
= V
CC(max)
I
SB2[8]
Automatic CE power down
current – CMOS inputs
–
2
8
A
Notes
3. V
IL
(min) = –2.0 V for pulse durations less than 20 ns.
4. V
IH
(max) = V
CC
+ 0.75 V for pulse durations less than 20 ns.
5. Full device AC operation assumes a 100
s
ramp time from 0 to V
CC
(min) and 200
s
wait time after V
CC
stabilization.
6. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= 3 V, and V
CC
= 5 V, T
A
= 25 °C.
7. Please note that the maximum V
OH
limit does not exceed minimum CMOS V
IH
of 3.5 V. If you are interfacing this SRAM with 5 V legacy processors that require a
minimum V
IH
of 3.5 V, please refer to Application Note
AN6081
for technical details and options you may consider.
8. Chip enable (CE) needs to be tied to CMOS levels to meet the I
SB1
/I
SB2
/ I
CCDR
spec. Other inputs can be left floating.
Document Number: 001-43141 Rev. *E
Page 4 of 17
CY62157ESL MoBL
®
Capacitance
Parameter
[9]
C
IN
C
OUT
Description
Input capacitance
Output capacitance
Test Conditions
T
A
= 25 °C, f = 1 MHz, V
CC
= V
CC(typ)
Max
10
10
Unit
pF
pF
Thermal Resistance
Parameter
[9]
JA
JC
Description
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
Test Conditions
Still Air, soldered on a 3 × 4.5 inch, two-layer printed circuit
board
TSOP II
77
13
Unit
C/W
C/W
AC Test Loads and Waveforms
Figure 2. AC Test Loads and Waveforms
R1
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
V
CC
10%
GND
R2 Rise Time = 1 V/ns
Equivalent to:
ALL INPUT PULSES
90%
90%
10%
Fall Time = 1 V/ns
THÉVENIN EQUIVALENT
R
TH
OUTPUT
V
TH
Parameters
R1
R2
R
TH
V
TH
2.5 V
16667
15385
8000
1.20
3.0 V
1103
1554
645
1.75
5.0 V
1800
990
639
1.77
Unit
V
Note
9. Tested initially and after any design or process changes that may affect these parameters
.
Document Number: 001-43141 Rev. *E
Page 5 of 17
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
