CY62146E MoBL
®
4-Mbit (256 K × 16) Static RAM
4-Mbit (256 K × 16) Static RAM
Features
■
■
■
Very high speed: 45 ns
Wide voltage range: 4.5 V to 5.5 V
Ultra low standby power
❐
Typical standby current: 1
A
❐
Maximum standby current: 7
A
Ultra low active power
❐
Typical active current: 2 mA at f = 1 MHz
Easy memory expansion with CE and OE features
Automatic power down when deselected
Complementary metal oxide semiconductor (CMOS) for
optimum speed and power
Available in Pb-free 44-pin thin small outline package (TSOP)
Type II package
feature that reduces power consumption when addresses are
not toggling. Placing the device into standby mode reduces
power consumption by more than 99% when deselected (CE
HIGH). The input and output pins (I/O
0
through I/O
15
) are placed
in a high impedance state when the device is deselected (CE
HIGH), the outputs are disabled (OE HIGH), both Byte High
Enable and Byte Low Enable are disabled (BHE, BLE HIGH) or
during a write operation (CE LOW and WE LOW).
To write to the device, take Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from I/O pins (I/O
0
through I/O
7
) is written into the location
specified on the address pins (A
0
through A
17
). If Byte High
Enable (BHE) is LOW, then data from I/O pins (I/O
8
through
I/O
15
) is written into the location specified on the address pins
(A
0
through A
17
).
To read from the device, take Chip Enable (CE) and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If
Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appears on I/O
0
to I/O
7
. If
Byte High Enable (BHE) is LOW, then data from memory
appears on I/O
8
to I/O
15
. See
Truth Table on page 11
for a
complete description of read and write modes.
The CY62146E device is suitable for interfacing with processors
that have TTL I/P levels. It is not suitable for processors that
require CMOS I/P levels. Please
Electrical Characteristics on
page 4
for more details and suggested alternatives.
■
■
■
■
■
Functional Description
The CY62146E is a high performance CMOS static RAM
organized as 256K words by 16 bits. This device features
advanced circuit design to provide ultra low active current. It is
ideal for providing More Battery Life (MoBL
®
) in portable
applications. The device also has an automatic power down
Logic Block Diagram
DATA IN DRIVERS
A
10
A
9
A
8
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
ROW DECODER
256 K × 16
RAM Array
SENSE AMPS
I/O
0
–I/O
7
I/O
8
–I/O
15
COLUMN DECODER
BHE
WE
CE
OE
BLE
A
11
A
12
A
13
A
15
A
14
A
16
A
17
Cypress Semiconductor Corporation
Document Number: 001-07970 Rev. *J
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised June 4, 2013
CY62146E MoBL
®
Contents
Pin Configurations ........................................................... 3
Product Portfolio .............................................................. 3
Maximum Ratings ............................................................. 4
Operating Range ............................................................... 4
Electrical Characteristics ................................................. 4
Capacitance ...................................................................... 5
Thermal Resistance .......................................................... 5
AC Test Loads and Waveforms ....................................... 5
Data Retention Characteristics ....................................... 6
Data Retention Waveform ................................................ 6
Switching Characteristics ................................................ 7
Switching Waveforms ...................................................... 8
Truth Table ...................................................................... 11
Ordering Information ...................................................... 12
Ordering Code Definitions ......................................... 12
Package Diagram ............................................................ 13
Acronyms ........................................................................ 14
Document Conventions ................................................. 14
Units of Measure ....................................................... 14
Document History Page ................................................. 15
Sales, Solutions, and Legal Information ...................... 16
Worldwide Sales and Design Support ....................... 16
Products .................................................................... 16
PSoC Solutions ......................................................... 16
Document Number: 001-07970 Rev. *J
Page 2 of 16
CY62146E MoBL
®
Pin Configurations
Figure 1. 44-pin TSOP II pinout (Top View)
[1]
A
4
A
3
A
2
A
1
A
0
CE
I/O
0
I/O
1
I/O
2
I/O
3
V
CC
V
SS
I/O
4
I/O
5
I/O
6
I/O
7
WE
A
17
A
16
A
15
A
14
A
13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A
5
A
6
A
7
OE
BHE
BLE
I/O
15
I/O
14
I/O
13
I/O
12
V
SS
V
CC
I/O
11
I/O
10
I/O
9
I/O
8
NC
A
8
A
9
A
10
A
11
A
12
Product Portfolio
Power Dissipation
Product
Range
Min
CY62146ELL
Industrial /
Automotive-A
4.5
V
CC
Range (V)
Typ
[2]
5.0
Max
5.5
45
Speed
(ns)
Operating I
CC
, (mA)
f = 1 MHz
Typ
[2]
2
Max
2.5
f = f
max
Typ
[2]
15
Max
20
Standby, I
SB2
(A)
Typ
[2]
1
Max
7
Notes
1. NC pins are not connected on the die.
2. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
Document Number: 001-07970 Rev. *J
Page 3 of 16
CY62146E MoBL
®
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 °C to +150 °C
Ambient temperature with
power applied .......................................... –55 °C to +125 °C
Supply voltage to ground potential ................–0.5 V to 6.0 V
DC voltage applied to outputs
in high Z state
[3, 4]
.........................................–0.5 V to 6.0 V
DC input voltage
[3, 4]
.....................................–0.5 V to 6.0 V
Output current into outputs (LOW) ............................. 20 mA
Static discharge voltage
(MIL-STD-883, Method 3015) .................................. >2001 V
Latch-up current ..................................................... >200 mA
Operating Range
Device
CY62146ELL
Range
Ambient
Temperature
V
CC
[5]
Industrial /
–40 °C to +85 °C 4.5 V–5.5 V
Automotive-A
Electrical Characteristics
Over the Operating Range
Parameter
V
OH
V
OL
V
IH
V
IL
I
IX
I
OZ
I
CC
Description
Output high voltage
Output low voltage
Input high voltage
Input low voltage
Input leakage current
Output leakage current
V
CC
operating supply current
Test Conditions
V
CC
= 4.5 V
V
CC
= 5.5 V
I
OL
= 2.1 mA
4.5 < V
CC
< 5.5
4.5 < V
CC
< 5.5
GND < V
I
< V
CC
GND < V
O
< V
CC
, output disabled
f = f
max
= 1/t
RC
f = 1 MHz
I
SB2 [8]
Automatic CE power down
current – CMOS inputs
V
CC
= V
CCmax
I
OUT
= 0 mA,
CMOS levels
I
OH
= –1.0 mA
I
OH
= –0.1 mA
45 ns (Industrial/Automotive-A)
Min
2.4
–
–
2.2
–0.5
–1
–1
–
–
–
Typ
[6]
–
–
–
–
–
–
–
15
2
1
Max
–
3.4
[7]
0.4
V
CC
+ 0.5
0.8
+1
+1
20
2.5
7
A
V
V
V
A
A
mA
Unit
V
CE > V
CC
– 0.2 V,
V
IN
> V
CC
– 0.2 V or V
IN
< 0.2 V,
f = 0, V
CC
= V
CC(max)
Notes
3. V
IL
(min) = –2.0 V for pulse durations less than 20 ns for I < 30 mA.
4. V
IH
(max) = V
CC
+ 0.75 V for pulse durations less than 20 ns.
5. Full Device AC operation assumes a minimum of 100
s
ramp time from 0 to V
CC
(min) and 200
s
wait time after V
CC
stabilization.
6. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
= V
CC(typ)
, T
A
= 25 °C.
7. Please note that the maximum V
OH
limit does not exceed minimum CMOS V
IH
of 3.5 V. If you are interfacing this SRAM with 5 V legacy processors that require a
minimum V
IH
of 3.5 V, please refer to Application Note
AN6081
for technical details and options you may consider.
8. Chip enable (CE) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the I
SB2
/ I
CCDR
spec. Other inputs are left floating.
Document Number: 001-07970 Rev. *J
Page 4 of 16
CY62146E MoBL
®
Capacitance
Parameter
[9]
C
IN
C
OUT
Description
Input capacitance
Output capacitance
Test Conditions
T
A
= 25 °C, f = 1 MHz, V
CC
= V
CC(typ)
Max
10
10
Unit
pF
pF
Thermal Resistance
Parameter
[9]
JA
JC
Description
Thermal resistance
(junction to ambient)
Thermal resistance
(junction to case)
Test Conditions
Still Air, soldered on a 3 × 4.5 inch, two layer printed circuit
board
44-pin TSOP II Unit
77
13
C/W
C/W
AC Test Loads and Waveforms
Figure 2. AC Test Loads and Waveforms
R1
V
CC
OUTPUT
30 pF
INCLUDING
JIG AND
SCOPE
V
CC
10%
GND
R2 Rise Time = 1 V/ns
Equivalent to:
ALL INPUT PULSES
90%
90%
10%
Fall Time = 1 V/ns
THÉVENIN EQUIVALENT
R
TH
OUTPUT
V
TH
Parameters
R1
R2
R
TH
V
TH
5.0 V
1800
990
639
1.77
Unit
V
Note
9. Tested initially after any design or process changes that may affect these parameters.
Document Number: 001-07970 Rev. *J
Page 5 of 16
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