TSM2312
20V N-Channel Enhancement Mode MOSFET
Pin assignment:
1. Gate
2. Source
3. Drain
V
DS
= 20V
R
DS (on)
, Vgs @ 4.5V, Ids @ 5.0A = 33mΩ
R
DS (on)
, Vgs @ 2.5V, Ids @ 4.0A = 40mΩ
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Compact and low profile SOT-23 package
Block Diagram
Ordering Information
Part No.
TSM2312CX
Packing
Tape & Reel
Package
SOT-23
Absolute Maximum Rating
(Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
Ta = 25
o
C
Ta = 75
o
C
P
D
Limit
20V
±8
5
15
1.25
0.8
Unit
V
V
A
A
W
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T
J
T
J
, T
STG
+150
- 55 to +150
o
o
C
C
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=5sec.
Symbol
T
L
R
θja
Limit
5
100
Unit
S
o
C/W
TSM2312
1-1
2003/12 rev. A
Electrical Characteristics
Ta = 25
o
C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State
Resistance
Drain-Source On-State
Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
On-State Drain Current
Forward Transconductance
Conditions
Symbol
Min
Typ
Max
Unit
V
GS
= 0V, I
D
= 250uA
V
GS
= 4.5V, I
D
= 5.0A
V
GS
= 2.5V, I
D
= 4.0A
V
DS
= V
GS
, I
D
= 250uA
V
DS
= 20V, V
GS
= 0V
V
GS
= ± 8V, V
DS
= 0V
V
DS
≧
10V, V
GS
= 4.5V
V
DS
= 5V, I
D
= 5.0A
BV
DSS
R
DS(ON)
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
I
D(ON)
g
fs
20
--
--
25
--
33
V
mΩ
--
35
40
0.45
--
--
15
--
--
--
--
--
20
--
1.0
± 100
--
--
V
uA
nA
A
S
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
V
DD
= 10V, R
L
= 10Ω,
I
D
= 1A, V
GEN
= 4.5V,
R
G
= 6Ω
V
DS
= 10V, I
D
= 3.6A,
V
GS
= 4.5V
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
--
--
--
--
--
--
--
--
--
--
11
1.4
2.2
15
40
48
31
900
140
100
14
--
--
25
60
70
45
--
--
--
pF
nS
nC
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
I
S
= 1.0A, V
GS
= 0V
Note : pulse test: pulse width <=300uS, duty cycle <=2%
I
S
V
SD
--
--
--
0.75
1.6
1.2
A
V
TSM2312
2-2
2003/12 rev. A
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