Data Sheet
4V Drive Nch MOSFET
RXH125N03
Structure
Silicon N-channel MOSFET
Dimensions
(Unit : mm)
SOP8
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
(8)
(5)
(1)
(4)
Application
Switching
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
RXH125N03
Taping
TB
2500
Inner circuit
(8)
(7)
(6)
(5)
Absolute maximum ratings
(Ta = 25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body Diode)
Power dissipation
Channel temperature
Range of storage temperature
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Symbol
V
DSS
V
GSS
Limits
30
20
12.5
36
1.6
36
2.0
150
55
to
150
Unit
V
V
A
A
A
A
W
C
C
(1) Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
∗2
∗1
(1)
(2)
(3)
(4)
∗1
ESD PROTECTION DIODE
∗2
BODY DIODE
Continuous
Pulsed
Continuous
Pulsed
I
D
I
DP
I
S
I
SP
P
D
Tch
Tstg
*1
*1
*2
Thermal resistance
Parameter
Channel to Ambient
*Mounted on a ceramic board.
Symbol
Rth (ch-a)
*
Limits
62.5
Unit
C
/ W
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/6
2011.03 - Rev.A
RXH125N03
Electrical characteristics
(Ta = 25C)
Parameter
Gate-source leakage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
Symbol
I
GSS
I
DSS
V
GS (th)
R
DS (on)
l Y
fs
l*
C
iss
C
oss
C
rss
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
Q
g
*
Q
gs
*
Q
gd
*
*
Min.
-
30
-
1.0
-
-
-
9.0
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
7.5
9.5
10.0
-
1000
340
170
12
20
55
18
12.7
2.6
6.0
Max.
10
-
1
2.5
12.0
13.3
14.0
-
-
-
-
-
-
-
-
-
-
-
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Unit
A
V
A
V
Conditions
V
GS
=20V, V
DS
=0V
I
D
=1mA, V
GS
=0V
V
DS
=30V, V
GS
=0V
V
DS
=10V, I
D
=1mA
I
D
=12.5A, V
GS
=10V
m I
D
=12.5A, V
GS
=4.5V
I
D
=12.5A, V
GS
=4.0V
I
D
=12.5A, V
DS
=10V
V
DS
=10V
V
GS
=0V
f=1MHz
I
D
=6.3A, V
DD
15V
V
GS
=10V
R
L
=2.38
R
G
=10
I
D
=12.5A, V
DD
15V
V
GS
=5V
Data Sheet
Drain-source breakdown voltage V
(BR)DSS
Body
diode characteristics
(Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
*Pulsed
Symbol
V
SD
*
Min.
-
Typ.
-
Max.
1.2
Unit
V
Conditions
I
s
=12.5A, V
GS
=0V
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/6
2011.03 - Rev.A
RXH125N03
Electrical
characteristic curves
(Ta=25C)
Fig.1 Typical Output Characteristics (Ⅰ)
12.5
Ta=25°C
Pulsed
10
V
GS
=10.0V
V
GS
=4.5V
Drain Current : I
D
[A]
7.5
V
GS
=3.0V
Data Sheet
Fig.2 Typical Output Characteristics (Ⅱ)
12.5
V
GS
=10.0V
V
GS
=4.5V
10
V
GS
=3.0V
Drain Current : I
D
[A]
7.5
V
GS
=4.0V
V
GS
=2.5V
V
GS
=4.0V
5
V
GS
=2.5V
2.5
5
2.5
Ta=25°C
Pulsed
0
0
0.2
0.4
0.6
0.8
1
0
0
2
4
6
8
10
Drain-Source Voltage : V
DS
[V]
Drain-Source Voltage : V
DS
[V]
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
100
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
100
Ta=25°C
Pulsed
V
GS
=10V
pulsed
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
V
GS
=4.0V
V
GS
=4.5V
V
GS
=10V
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
1
0.01
0.1
1
Drain Current : I
D
[A]
10
100
1
0.01
0.1
1
Drain Current : I
D
[A]
10
100
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current
100
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
100
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
V
GS
=4V
pulsed
V
GS
=4.5V
pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
10
10
1
0.01
0.1
1
Drain Current : I
D
[A]
10
100
1
0.01
0.1
1
Drain Current : I
D
[A]
10
100
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
3/6
2011.03 - Rev.A
RXH125N03
Data Sheet
Fig.7 Forward Transfer Admittance vs. Drain Current
100
V
DS
=10V
pulsed
10
Forward Transfer Admittance
Y
fs
[S]
Drain Currnt : I
D
[A]
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
100
V
DS
=10V
pulsed
Fig.8 Typical Transfer Characteristics
1
1
0.1
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.01
0.01
0.001
0.01
0.1
1
10
100
0.001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Drain Current : I
D
[A]
Gate-Source Voltage : V
GS
[V]
Fig.9 Source Current vs. Source-Drain Voltage
100
V
GS
=0V
pulsed
Static Drain-Source On-State Resistance
R
DS(on)
[mΩ]
Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
50
Ta=25°C
pulsed
40
I
D
=6.3A
I
D
=12.5A
30
10
Source Current : I
s
[A]
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
20
0.1
10
0.01
0.0
0.5
1.0
1.5
2.0
0
0
2
4
6
8
10
Source-Drain Voltage : V
SD
[V]
Gate-Source Voltage : V
GS
[V]
Fig.11 Switching Characteristics
10000
V
DD
≒15V
V
GS
=10V
R
G
=10Ω
Ta=25°C
Pulsed
t
f
t
d(off)
100
10
Ta=25°C
V
DD
=15V
I
D
=12.5A
Pulsed
Fig.12 Dynamic Input Characteristics
Gate-Source Voltage : V
GS
[V]
1000
Switching Time : t [ns]
8
6
4
10
t
d(on)
1
t
r
2
0.01
0.1
1
Drain Current : I
D
[A]
10
100
0
0
5
10
15
20
25
Total Gate Charge : Q
g
[nC]
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
4/6
2011.03 - Rev.A
RXH125N03
Data Sheet
Fig.13 Typical Capacitance vs. Drain-Source Voltage
10000
100
Fig.14 Maximum Safe Operating Area
Operation in this area is limited by R
DS(on)
(V
GS
= 10V)
P
W
= 100μs
10
Drain Current : I
D
[ A ]
Capacitance : C [pF]
1000
C
iss
P
W
= 1ms
1
P
W
= 10ms
100
C
rss
Ta=25°C
f=1MHz
V
GS
=0V
10
0.01
0.1
1
10
C
oss
0.1
T
a
=25°C
Single Pulse
Mounted on a ceramic board.
(30mm
×
30mm
×
0.8mm)
0.1
1
10
DC Operation
0.01
100
100
Drain-Source Voltage : V
DS
[V]
Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width
10
Drain-Source Voltage : V
DS
[ V ]
Normalized Transient Thermal Resistance : r (t)
Ta=25°C
Single Pulse
1
0.1
0.01
0.001
Mounted on a ceramic board.
(30mm
×
30mm
×
0.8mm)
Rth
(ch-a)
=62.5°C/W
Rth
(ch-a)
(t)=r(t)×Rth
(ch-a)
0.001
0.01
0.1
1
10
100
1000
0.0001
0.0001
Pulse width : Pw (s)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
5/6
2011.03 - Rev.A
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
