TSM2321
-20V P-Channel Enhancement Mode MOSFET
Pin assignment:
1. Gate
2. Source
3. Drain
V
DS
= - 20V
R
DS (on)
, Vgs @ -4.5V, Ids @ -3.2A = 65mΩ
R
DS (on)
, Vgs @ -2.5V, Ids @ -2.0A = 90mΩ
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Compact and low profile SOT-23 package
Block Diagram
Ordering Information
Part No.
TSM2321CX
Packing
Tape & Reel
Package
SOT-23
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Ta = 25
o
C
Ta = 75
o
C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
T
J
, T
STG
Limit
-20V
±10
-3.2
-11
1.25
0.8
+150
-55 to +150
Unit
V
V
A
A
W
o
o
C
C
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=5sec.
Symbol
T
L
R
θja
Limit
5
100
Unit
S
o
C/W
TSM2321
1-5
2005/06 rev. A
Electrical Characteristics
Ta = 25
o
C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
On-State Drain Current
Forward Transconductance
Conditions
Symbol
Min
Typ
Max
Unit
V
GS
= 0V, I
D
= -250uA
V
GS
= -4.5V, I
D
= -3.2A
V
GS
= -2.5V, I
D
= -2.0A
V
DS
= V
GS
, I
D
= -250uA
V
DS
= -16V, V
GS
= 0V
V
GS
= ±10V, V
DS
= 0V
V
DS
= -5V, V
GS
= -4.5V
V
DS
= -5V, I
D
= -3.2A
BV
DSS
R
DS(ON)
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
I
D(ON)
g
fs
-20
--
--
-0.6
--
--
-8
--
--
50
75
-0.9
--
--
--
8
--
65
90
-1.5
-1.0
±100
--
--
V
mΩ
V
uA
nA
A
S
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
I
S
= - 1.6A, V
GS
= 0V
I
S
V
SD
--
--
--
-0.78
-1.6
-1.2
A
V
V
DS
= -10V, I
D
= -3.2A,
V
GS
= -4.5V
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
--
--
--
--
--
--
--
--
--
--
7.4
1.2
2.8
13.9
7.1
75.2
54
610
155
105
--
--
--
pF
nS
--
--
--
nC
V
DD
= -10V, R
L
= 10Ω,
I
D
= -1A, V
GEN
= -4.5V,
R
G
= 6Ω
V
DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Note : pulse test: pulse width <=300uS, duty cycle <=2%
TSM2321
2-5
2005/06 rev. A
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