TSM2N7000
60V N-Channel Enhancement Mode MOSFET
Pin assignment:
1. Gate
2. Source
3. Drain
V
DS
= 60V
I
D
= 200mA
R
DS (on)
, Vgs @ 10V, Ids @ 500mA = 5.0Ω
General Description
The TSM2N7000 is produced using high cell density, DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most
applications requiring up to 200mA DC and can deliver pulsed currents up to 500mA. This product is particularly suited
for low voltage, low current application such as small servo motor control, power MOSFET gate drivers, and other
switching applications.
Features
High density cell design for low on-resistance
Voltage control small signal switch
Rugged and reliable
High saturation current capability
Provide in TO-92 package
Ordering Information
Part No.
TSM2N7000CT A3
TSM2N7000CT B0
Packing
Ammo pack
Bulk pack
Package
TO-92
Block Diagram
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage --- Continuous
--- Pulsed
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Ta = 25 C
Ta > 25
o
C
Operating Junction Temperature
Operating Junction and Storage Temperature Range
T
J
T
J
, T
STG
o
Symbol
V
DS
V
DGR
V
GS
V
GSM
I
D
I
DM
P
D
Limit
60
60
± 20
± 40
200
500
350
2.8
+150
- 55 to +150
Unit
V
V
V
mA
mA
mW
mW/
o
C
o
o
C
C
Thermal Performance
Parameter
Lead Temperature (1/8” from case)
Junction to Ambient Thermal Resistance
Symbol
T
L
R
θja
Limit
10
357
Unit
S
o
C/W
TSM2N7000
1-3
2003/12 rev. A
Electrical Characteristics
Tj = 25
o
C unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance *
Conditions
V
GS
= 0V, I
D
= 10uA
V
GS
= 10V, I
D
= 500mA
V
GS
= 5V, I
D
= 50mA
Symbol
Min
60
--
--
--
0.8
--
--
60
Typ
--
--
7.5
--
--
--
--
--
Max
--
5.0
--
2.5
3.0
1.0
- 10
--
Unit
V
Ω
BV
DSS
R
DS(ON)
R
DS(ON)
V
DS(ON)
V
GS(TH)
I
DSS
I
GSS
I
D(ON)
Drain-Source On-Voltage *
Gate Threshold Voltage *
Zero Gate Voltage Drain Current
Gate Body Leakage - Forward
On-State Drain Current
V
GS
= 0V, I
D
= 10uA
V
DS
= V
GS
, I
D
= 1.0mA
V
DS
= 48V, V
GS
= 0V
V
GS
= 15V, V
DS
= 0V
V
DS
5V, V
GS
= 10V
V
V
uA
nA
mA
Dynamic
Turn-On Rise Time *
Turn-Off Fall Time *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DD
= 15V, R
L
= 30Ω,
I
D
= 500mA,
V
GEN
= 10V, R
G
= 25Ω
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
t
r
t
f
C
iss
C
oss
C
rss
--
--
--
--
--
10
10
60
25
5
--
--
--
--
--
pF
nS
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
I
S
= 200mA, V
GS
= 0V
I
S
V
SD
--
--
--
1.3
500
1.5
mA
V
* Note : pulse test: pulse width <=300uS, duty cycle <=2%
TSM2N7000
2-3
2003/12 rev. A
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