TSM3461CX5
20V N-Channel MOSFET w/ESD Protected
Pin assignment:
1. Drain
5. Drain
2. Drain
3. Gate
4. Source
V
DS
= 20V
R
DS (on)
, Vgs @ 4.5V, Ids @ 6A =22mΩ (typ.)
R
DS (on)
, Vgs @ 2.5V, Ids @ 5A =35mΩ (typ.)
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Excellent thermal and electrical capabilities
Specially designed for Li-ion battery packs.
Battery switch application
Block Diagram
Ordering Information
Part No.
TSM3461CX5 RF
Packing
Tape & Reel
3,000/per reel
Package
SOT-25
Absolute Maximum Rating
(Ta = 25
o
C
unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@4.5V.
Ta = 25
o
C
Ta = 70
o
C
Pulsed Drain Current, V
GS
@4.5V
Diode Forward Current
Maximum Power Dissipation
Ta = 25
o
C
Ta = 70
o
C
Operating Junction and Storage Temperature Range
T
J
, T
STG
Symbol
V
DS
V
GS
I
D
I
D
I
DM
Is
P
D
Limit
20V
± 12
6
5
30
1.5
1.3
0.96
- 55 to +150
Unit
V
V
A
A
A
A
W
o
C
Thermal Performance
Parameter
Junction to Foot (Drain) Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Note: Surface mounted on FR4 board t<=300uS, Duty < 2%.
Symbol
R
θjf
R
θja
Limit
35
120
Unit
o
o
C/W
C/W
TSM3461CX5
1-5
2005/05 rev. C
Electrical Characteristics
Tj = 25
o
C unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage
On-State Drain Current
Forward Transconductance
Conditions
V
GS
= 0V, I
D
= 250uA
V
GS
= 4.5V, I
D
= 6A
V
GS
= 4.5V, I
D
= 6A
V
GS
= 2.5V, I
D
= 5A
V
DS
= V
GS
, I
D
= 250uA
V
DS
= 12V, V
GS
= 0V
V
DS
= 12V, V
GS
= 0V, Tj = 60
o
C
V
GS
= ± 12V, V
DS
= 0V
V
GS
= 4.5V, V
DS
>= 5V
V
DS
= 10V, I
D
= 6A
V
DS
= 10V, I
D
= 6A,
V
GS
= 4.5V
V
DD
= 10V, R
L
= 10Ω,
I
D
= 1A, V
GEN
= 4.5V,
R
G
= 6Ω
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
25
o
C
60
o
C
Symbol
Min
20
--
--
--
0.5
--
--
--
30
--
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
25
40
35
0.85
--
--
--
--
30
15.5
2
3.5
75
125
600
300
1336
220
130
--
0.6
Max
--
30
50
45
--
1.0
25
± 100
--
--
30
--
--
100
150
720
360
--
--
--
1.5
1.2
Unit
V
mΩ
mΩ
V
uA
nA
A
S
BV
DSS
R
DS(ON)
R
DS(ON)
R
DS(ON)
V
GS(TH)
I
DSS
I
GSS
I
D(ON)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
I
S
Dynamic *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
I
S
= 1.5A, V
GS
= 0V
A
V
V
SD
nC
nS
pF
Note : * for design only, not subject to production tested.
pulse test: pulse width <=300uS, duty cycle <=2%
TSM3461CX5
2-5
2005/05 rev. C
实时操作系统RTOS
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