SO
T3
23
1PS302
Dual high-speed switching diode
Rev. 6 — 23 July 2012
Product data sheet
1. Product profile
1.1 General description
Dual high-speed switching diode, encapsulated in a very small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
High switching speed: t
rr
4 ns
Repetitive peak reverse voltage:
V
RRM
85 V
Reverse voltage: V
R
80 V
AEC-Q101 qualified
Low capacitance: C
d
1.5 pF
Repetitive peak forward current:
I
FRM
500 mA
Very small SMD plastic package
1.3 Applications
High-speed switching
General-purpose switching
1.4 Quick reference data
Table 1.
Symbol
Per diode
I
F
forward current
[1]
[2]
[3]
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
200
170
0.5
80
4
mA
mA
A
V
ns
I
R
V
R
t
rr
[1]
[2]
[3]
[4]
reverse current
reverse voltage
reverse recovery time
V
R
= 80 V
[4]
-
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Single diode loaded.
Double diode loaded.
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA.
NXP Semiconductors
1PS302
Dual high-speed switching diode
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
anode
cathode
cathode (diode 1),
anode (diode 2)
1
2
1
2
006aaa763
Simplified outline
3
Graphic symbol
3
3. Ordering information
Table 3.
Ordering information
Package
Name
1PS302
SC-70
Description
plastic surface-mounted package; 3 leads
Version
SOT323
Type number
4. Marking
Table 4.
1PS302
[1]
* = placeholder for manufacturing site code
Marking codes
Marking code
[1]
C*3
Type number
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
RRM
V
R
I
F
repetitive peak reverse
voltage
reverse voltage
forward current
[1]
[2]
[3]
Parameter
Conditions
Min
-
-
-
-
-
[4]
Max
85
80
200
170
500
Unit
V
V
mA
mA
mA
I
FRM
I
FSM
repetitive peak forward
current
non-repetitive peak forward
current
t
p
0.5
s;
0.25
square wave
t
p
= 1
s
t
p
= 1 s
-
-
4
0.5
A
A
1PS302
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 23 July 2012
2 of 11
NXP Semiconductors
1PS302
Dual high-speed switching diode
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
Parameter
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
T
amb
25
C
[1]
Min
-
-
55
65
Max
300
150
+150
+150
Unit
mW
C
C
C
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Single diode loaded.
Double diode loaded.
T
j
= 25
C
before surge.
6. Thermal characteristics
Table 6.
Symbol
Per device
R
th(j-a)
R
th(j-sp)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
415
200
Unit
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 100 mA
I
R
reverse current
V
R
= 25 V
V
R
= 80 V
V
R
= 25 V; T
j
= 150
C
V
R
= 80 V; T
j
= 150
C
C
d
t
rr
V
FR
[1]
[2]
Parameter
Conditions
Min
-
-
-
-
-
-
-
-
-
[1]
[2]
Typ
610
740
-
-
-
-
-
-
-
-
-
Max
-
-
1.0
1.2
30
0.5
30
100
1.5
4
1.75
Unit
mV
mV
V
V
nA
A
A
A
pF
ns
V
diode capacitance
reverse recovery time
forward recovery voltage
f = 1 MHz; V
R
= 0 V
-
-
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA.
When switched from I
F
= 10 mA; t
r
= 20 ns.
1PS302
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 23 July 2012
3 of 11
NXP Semiconductors
1PS302
Dual high-speed switching diode
300
I
F
(mA)
200
(1)
(2)
(3)
006aac851
10
2
I
R
(μA)
10
mbg380
1
(1)
(2)
(3)
100
10
−1
0
0.0
10
−2
0.5
1.0
1.5
V
F
(V)
2.0
0
100
T
j
(°C)
200
(1) T
j
= 150
C;
typical values
(2) T
j
= 25
C;
typical values
(3) T
j
= 25
C;
maximum values
(1) V
R
= 80 V; maximum values
(2) V
R
= 80 V; typical values
(3) V
R
= 25 V; typical values
Fig 1.
Forward current as a function of forward
voltage
0.8
006aac852
Fig 2.
Reverse current as a function of junction
temperature
mbg443
300
I
F
(mA)
200
C
d
(pF)
0.6
(1)
0.4
(2)
100
0.2
0.0
0
4
8
12
V
R
(V)
16
0
0
100
T
amb
(°C)
200
f = 1 MHz; T
amb
= 25
C
FR4 PCB, standard footprint
(1) single diode loaded
(2) double diode loaded
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values
Fig 4.
Forward current as a function of ambient
temperature; derating curves
1PS302
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 23 July 2012
4 of 11
NXP Semiconductors
1PS302
Dual high-speed switching diode
8. Test information
t
r
D.U.T.
R
S
= 50
Ω
V = V
R
+
I
F
×
R
S
I
F
SAMPLING
OSCILLOSCOPE
R
i
= 50
Ω
V
R
mga881
t
p
t
10 %
+
I
F
trr
t
90 %
input signal
output signal
(1)
(1) I
R
= 1 mA
Input signal: reverse pulse rise time t
r
= 0.6 ns; reverse voltage pulse duration t
p
= 100 ns; duty cycle
= 0.05
Oscilloscope: rise time t
r
= 0.35 ns
Fig 5.
Reverse recovery time test circuit and waveforms
I
1 kΩ
450
Ω
I
90 %
V
R
S
= 50
Ω
D.U.T.
OSCILLOSCOPE
R
i
= 50
Ω
10 %
t
t
r
t
p
input signal
VFR
t
output signal
mga882
Input signal: forward pulse rise time t
r
= 20 ns; forward current pulse duration t
p
100 ns; duty cycle
0.005
Fig 6.
Forward recovery voltage test circuit and waveforms
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors,
and is
suitable for use in automotive applications.
1PS302
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 6 — 23 July 2012
5 of 11
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