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GBU802

产品描述8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
产品类别半导体    分立半导体   
文件大小355KB,共2页
制造商Gaomi Xinghe Electronics
官网地址http://www.sddzg.com
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GBU802概述

8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

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星合电子
XINGHE ELECTRONICS
GLASS PASSIVATED
BRIDGE RECTIFIERS
FEATURES
Surge overload rating -200 amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing
GBU8005 thru GBU810
REVERSE VOLTAGE
- 50
to
1000Volts
FORWARD CURRENT
- 8.0
Amperes
GBU
.437(11.1)
.430(10.9)
.874(22.2)
.860(21.8)
.154(3.9)
.146(3.7)
.232(5.9)
.224(5.7)
.401(10.2)
.392(9.80)
.126(3.2)*45°
CHAMFER
.139(3.53)
.133(3.37)
molded plastic technique
Plastic material has U/L
the flammability classification 94V-0
Mounting postition:Any
.752(19.1)
.720(18.3)
.073(1.85)
.057(1.45)
.720(18.29)
.680(17.27)
.047(1.2)
.035(0.9)
.100(2.54)
.085(2.16)
.080(2.03)
.065(1.65)
.106(2.7)
.091(2.3)
.210
.190
(5.3)
(4.8)
.210
.190
(5.3)
(4.8)
.210
.190
(5.3)
(4.8)
.022(.56)
.018(.46)
Dimensions in inches and (milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward (with heatsink Note 2)
Rectified Current
@ T
C
=100℃ (without heatsink)
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 4.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I
2
t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance Per Element (Note1)
Typical Thermal Resistance
Operating Temperature Range
Storage Temperature Range
@ T
J
=25℃
@ T
J
=125℃
SYMBOL GBU8005 GBU801 GBU802 GBU804 GBU806 GBU808 GBU810
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
8.0
3.2
200
1.1
10.0
500
166
60
2.2
-55 to +150
-55 to +150
600
420
600
800
560
800
1000
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
I
2
t
C
J
R
θJC
T
J
T
STG
A
V
μA
A
2
s
pF
℃/W
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 75mm*75mm*1.6mm Cu plate heatsink.
1
GAOMI XINGHE ELECTRONICSCO.,LTD.    WWW.SDDZG.COM     TEL:0536-2210359       QQ:464768017

GBU802相似产品对比

GBU802 GBU8005 GBU801 GBU804 GBU806 GBU808 GBU810
描述 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 3.2 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

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