WILLAS
Low Capacitance Quad Array for ESD Protection Description
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
SEMF3V3LC
FM120-M
THRU
FM1200-M
Pb Free Product
Features
Package outline
SOD-123H
General
profile surface mounted application in order to
Features
•
Low
Description
optimize board
transient voltage suppressor
This integrated
space.
•
Low power loss, high efficiency.
device
High current capability, low forward voltage drop.
•
(TVS) is designed for applications requiring
•
High surge capability.
transient overvoltage protection, printers, business
•
Guardring for overvoltage protection.
machines, communication systems, medical
•
Ultra high-speed switching.
equipment, and other applications.
silicon junction.
•
Silicon epitaxial planar chip, metal
Its integrated
•
provides
meet
effective and reliable
design
Lead-free parts
very
environmental standards of
better reverse leakage current and thermal resistance.
Four Separate Unidirectional Configurations for
Protection
Power Dissipation: 380mW
Small SOT-353 SMT Package
Low Capacitance
Complies to USB 1.1 Low Speed & Speed
Specifications
These are Pb-Free Devices
0.040(1.0)
0.024(0.6)
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Low Leakage Current < 1
μA
@ 3Volts
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
protection
product for packing
lines
suffix "G"
only one
RoHS
for separate
code
using
•
Halogen free
devices are ideal
suffix "H"
package. These
product for packing code
for situations
where board space is at a premium.
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
Applications
•
Terminals :Plated terminals, solderable per MIL-STD-750
Serial and Parallel
2026
Method
Ports
Microprocessor Based Equipment
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
Notebooks, Desktops, Servers
•
Weight Approximated 0.011 gram
Cellular
:
and Portable Equipment
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive
Marking code
of inductive load.
Type number
For capacitive load, derate current by 20%
Mechanical data
Pb-Free package is available
0.031(0.8) Typ.
0.031(0.8) Typ.
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
Moisture Sensitivity Level
inches and (millimeters)
Dimensions in
1
Complies with the following standards
IEC61000-4-2
8 kV(contact discharge)
MIL STD 883E - Method 3015-7 Class 3
25 kV HBM (Human Body Model)
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
13
30
21
30
10
100
70
100
115
150
105
150
120
200
140
200
Marking
MAXIMUM RATINGS AND ELECTRICAL
Level 4 15 kV (air discharge)
CHARACTERISTICS
SEMF3V3LC
RATINGS
VB
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Functional
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
diagram
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
V
V
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
SOT-353
-
65
to +175
Maximum Ratings (T
A
=25°C)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Symbol
Rated DC Blocking Voltage
Maximum Average Reverse Current at @T A=25℃
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
Parameter
0.50
0.70
0.5
10
0.85
Value
Units
0.9
W
mW
℃/W
Mw/℃
℃
℃
℃
0.92
P
PK
P
D
I
R
Peak Power Dissipation(8×20μs@T
A
=25℃)
@T A=125℃
30
380
327
3.05
150
m
NOTES:
Steady State Power-1 Diode
Thermal Resistance, Junction-to-Ambient
Maximum Junction Temperature
Operation Junction and Storage Temperature Range
Lead Solder Temperature(10 seconds duration)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Above 25℃,
Derate
2- Thermal Resistance From Junction to Ambient
T
Jmax
T
J
T
stg
T
L
R
θ
JA
-55 to +150
260
2012-0
2012-06
WILLAS ELECTRONIC CORP.
CORP
WILLAS ELECTRONIC
WILLAS
Low Capacitance Quad Array for ESD Protection Description
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
SEMF3V3LC
THRU
FM1200-M
Pb Free Product
Features
Electrical Parameter
excellent power dissipation offers
•
Batch process design,
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
Symbol
Parameter
•
High current capability, low forward voltage drop.
capability.
•
High surge
Maximum Reverse Peak Pulse Current
I
PP
•
Guardring for overvoltage protection.
V
C
Clamping Voltage @ I
PP
•
Ultra high-speed switching.
Silicon
•
V
RWM
epitaxial planar chip, metal silicon junction.
Working Peak Reverse Voltage
•
Lead-free parts meet environmental standards of
Maximum
MIL-STD-19500 /228
Reverse Leakage Current
I
R
V
for
•
RoHS product
RWM
packing code suffix "G"
Halogen free product for packing code suffix "H"
I
T
Test Current
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
@
V
BR
Breakdown Voltage @ I
T
•
Epoxy : UL94-V0 rated flame retardant
I
F
Forward Current
•
Case : Molded plastic, SOD-123H
,
V
F
Forward Voltage @ I
F
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Mechanical data
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
Electrical Characteristics
•
Mounting Position : Any
Part Numbers
•
Weight : Approximated 0.011 gram
V
BR
Dimensions in inches and (millimeters)
V
F
Max.
V
15
50
35
50
C
I
F
Typ.
0v
bias
pF
10
100
70
100
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
I
T
V
RWM
I
R
Min.
Typ. Max.
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
V
V
V
mA
1
12
20
V
3.3
13
30
14
40
28
40
µA
1.0
mA
18
80
56
80
Marking Code
SEMF3V3LC
RATINGS
5.3
5.6
5.88
1.
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
1.25
16
60
42
60
200
28
1. Non-repetitive current per
Maximum Recurrent Peak Reverse Voltage
Figure
Maximum RMS Voltage
2. Only 1 diode
Maximum DC Blocking Voltage
V
RRM
115
150
105
150
120
200
140
200
V
14
21
V
RMS
under power. For 4 diodes under power
30
I
O
V
Maximum Average Forward Rectified Current
20
V
DC
3.
Capacitance of one diode at f=1MHz,T
A
=25℃
I
FSM
R
ΘJA
C
J
T
J
TSTG
V
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Characteristics
1.0
30
A
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
V
I
R
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Figure 1 Pulse Width
Figure 2 Power Derating Curve
2012-0
2012-06
WILLAS ELECTRONIC CORP.
CORP
WILLAS ELECTRONIC
WILLAS
Low Capacitance Quad Array for ESD Protection Description
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOD-123H
SEMF3V3LC
FM120-M
THRU
FM1200-M
Pb Free Product
Features
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
Figure 3 Reverse Leakage versus temperature
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Figure 4 Capacitance
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Figure 5 8*20 Pulse Waveform
Maximum RMS Voltage
V
RMS
V
RRM
V
DC
I
O
I
FSM
12
20
14
20
13
30
21
30
.004(0.10)
.018(0. 46)
14
40
28
40
Figure 6 Forward Voltage
35
42
56
50
60
1.0
30
40
120
80
15
50
16
60
18
80
10
100
70
100
115
150
105
150
120
200
140
200
SOT-353 Mechanical
Maximum DC Blocking Voltage
Data
Maximum Average Forward Rectified Current
Peak Forward Surge Current
( 2 . 2 0 )
single half sine-wave
.0 8 6
8.3 ms
superimposed on rated load (JEDEC method)
.071(1.80)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
(
.05
TYP.
1.30
TYP.)
.031(0.80)
R
ΘJA
Typical Junction Capacitance (Note 1)
C
J
T
J
.039(1.00)
-55 to +125
-55 to +150
-
65
to +175
.031(0.80)
.039(1.00)
TSTG
.045(1.15)
.053(1.35)
. 0 71 ( 1 .8 0 )
. 0 9 6( 2 . 45 )
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
NOTES:
V
F
@T A=125℃
0.50
0.70
0.5
10
.006(0.15)
.014(0.35)
0.85
0.9
.031(0.80)
.043(1.10)
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
0.92
I
R
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.50BSC
.020BSC
.004(0.08)
.007(0.18)
Dimensions in inches and (millimeters)
2012-0
2012-06
WILLAS ELECTRONIC CORP.
CORP
WILLAS ELECTRONIC
SEMF3V3LC
Low Capacitance Quad Array for ESD Protection Description
Ordering Information:
Device PN
SEMF3V3LC ‐T
(1)
G
(2)
‐WS
Note: (1)
Packing code, Tape & Reel
Packing
Tape&Reel: 3 Kpcs/Reel
(2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H”
***Disclaimer***
WILLAS reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. WILLAS or anyone on its behalf assumes no responsibility or liability
for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" parameters
which may be included on WILLAS data sheets and/ or specifications can
and do vary in different applications and actual performance may vary over time.
WILLAS does not assume any liability arising out of the application or
use of any product or circuit.
WILLAS products are not designed, intended or authorized for use in medical,
life‐saving implant or other applications intended for life‐sustaining or other related
applications where a failure or malfunction of component or circuitry may directly
or indirectly cause injury or threaten a life without expressed written approval
of WILLAS. Customers using or selling WILLAS components for use in
such applications do so at their own risk and shall agree to fully indemnify WILLAS
Inc and its subsidiaries harmless against all claims, damages and expenditures
.
2012-0
WILLAS ELECTRONIC CORP.
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