Smart Low Side Power Switch
HITFET BTS 133
Features
•
Logic Level Input
•
Input Protection (ESD)
•=Thermal
shutdown with latch
•
Green product (RoHS compliant)
•
Short circuit
and Overload
protection
•
Overvoltage protection
•
Current
Product Summary
Drain source voltage
On-state resistance
Current limit
Nominal load current
Clamping energy
V
DS
R
DS(on)
I
D(lim)
I
D(ISO)
E
AS
60
50
21
7
V
mΩ
A
A
2000 mJ
limitation
•
Status feedback with external input resistor
•
Analog driving possible
•
AEC
qualified
•
Green product (RoHS compliant)
Application
•
All kinds of resistive, inductive and capacitive loads in switching or
linear applications
•
µC compatible power switch for 12 V and 24 V DC applications
•
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS
chip on chip tech-
nology. Providing embedded protection functions.
V bb
+
LOAD
M
D rain
2
1
IN
dv /d t
lim ita tio n
C u rre n t
O ve rvoltag e
p rotection
lim ita tio n
ESD
O v erloa d
pro te ctio n
O ve r-
te m pe rature
p ro te ctio n
S ho rt c ircu it
S h ort circ uit
p rotection
p ro te ctio n
S o u rce
3
H IT F E T
Datasheet
1
Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 133
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Drain source voltage
Drain source voltage for short circuit protection
Continuous input current
1)
-0.2V
≤
V
IN
≤
10V
V
IN
< -0.2V or
V
IN
> 10V
Operating temperature
Storage temperature
Power dissipation
T
C
= 25 °C
Unclamped single pulse inductive energy
I
D(ISO)
= 7 A
Electrostatic discharge
voltage
(Human Body Model)
V
ESD
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
Load dump protection
V
LoadDump2)
=
V
A
+
V
S
V
IN
=low or high;
V
A
=13.5 V
t
d
= 400 ms,
R
I
= 2
Ω,
I
D
=0,5*7A
t
d
= 400 ms,
R
I
= 2
Ω,
I
D
= 7A
V
LD
90
74
3000
V
E
AS
2000
mJ
T
j
T
stg
P
tot
Symbol
V
DS
V
DS(SC)
I
IN
no limit
|
I
IN
|
≤
2
- 40 ... +150
- 55 ... +150
90
W
°C
Value
60
32
mA
Unit
V
Thermal resistance
junction - case:
junction - ambient:
SMD version, device on PCB:
3)
R
thJC
R
thJA
R
thJA
1.4
75
45
K/W
1In case of thermal shutdown a minimum sensor holding current of 500 µA has to be guaranteed (see also page 3).
2
V
Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70µm thick) copper area for Drain connection.
PCB mounted vertical without blown air.
Datasheet
2
Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 133
Electrical Characteristics
Parameter
at T
j
=25°C, unless otherwise specified
Characteristics
Drain source clamp voltage
T
j
= - 40 ...+ 150°C,
I
D
= 10 mA
Off state drain current
V
DS
= 32 V,
T
j
= -40...+150 °C,
V
IN
= 0 V
Input threshold voltage
I
D
= 1,4 mA
Input current - normal operation,
I
D
<I
D(lim)
:
V
IN
= 10 V
Input current - current limitation mode,
I
D
=I
D(lim)
:
V
IN
= 10 V
Input current - after thermal shutdown,
I
D
=0 A:
V
IN
= 10 V
Input holding current after thermal shutdown
1)
T
j
= 25 °C
T
j
= 150 °C
On-state resistance
V
IN
= 5 V,
I
D
= 7 A,
T
j
= 25 °C
V
IN
= 5 V,
I
D
= 7 A,
T
j
= 150 °C
On-state resistance
V
IN
= 10 V,
I
D
= 7 A,
T
j
= 25 °C
V
IN
= 10 V,
I
D
= 7 A,
T
j
= 150 °C
Nominal load current (ISO 10483)
V
IN
= 10 V,
V
DS
= 0.5 V,
T
C
= 85 °C
I
D(ISO)
R
DS(on)
-
-
7
40
75
-
50
100
-
A
R
DS(on)
-
-
50
90
60
120
I
IN(1)
I
IN(2)
I
IN(3)
I
IN(H)
500
300
-
-
-
-
mΩ
-
60
1000
30
150
2500
55
350
4000
µA
V
DS(AZ)
I
DSS
V
IN(th)
Symbol
min.
60
-
1.3
Values
typ.
-
-
1.7
max.
73
10
2.2
V
µA
V
Unit
Datasheet
3
Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 133
Electrical Characteristics
Parameter
at T
j
=25°C, unless otherwise specified
Characteristics
Initial peak short circuit current limit
V
IN
= 10 V,
V
DS
= 12 V
Current limit
1)
V
IN
= 10 V,
V
DS
= 12 V,
t
m
= 350 µs,
T
j
= -40...+150 °C
Dynamic Characteristics
V
IN
to 90%
I
D
:
R
L
= 2,2
Ω,
V
IN
= 0 to 10 V,
V
bb
= 12 V
Turn-off time
V
IN
to 10%
I
D
:
Turn-on time
R
L
= 2,2
Ω,
V
IN
= 10 to 0 V,
V
bb
= 12 V
Slew rate on
Slew rate off
70 to 50%
V
bb
:
-dV
DS
/dt
on
dV
DS
/dt
off
--
--
1
1
3
3
V/µs
R
L
= 2,2
Ω,
V
IN
= 0 to 10 V,
V
bb
= 12 V
50 to 70%
V
bb
:
R
L
= 2,2
Ω,
V
IN
= 10 to 0 V,
V
bb
= 12 V
t
on
t
off
--
--
40
70
100
170
µs
I
D(lim)
21
28
40
I
D(SCp)
-
65
-
A
Symbol
min.
Values
typ.
max.
Unit
Protection Functions
2)
Thermal overload trip temperature
Unclamped single pulse inductive energy
I
D
= 7 A,
T
j
= 25 °C,
V
bb
= 32 V
I
D
= 7 A,
T
j
= 150 °C,
V
bb
= 32 V
T
jt
E
AS
2000
450
-
-
-
-
150
165
-
°C
mJ
Inverse Diode
Inverse diode forward voltage
I
F
= 5*7A,
t
m
= 300
µS,
V
IN
= 0 V
1Device switched on into existing short circuit (see diagram Determination of I D(lim)). If the device is in on condition
and a short circuit occurs, these values might be exceeded for max. 50 µs.
V
SD
-
1.08
-
V
2
Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
Datasheet
4
Rev. 1.3, 2008-12-10
Smart Low Side Power Switch
HITFET BTS 133
Block Diagramm
Terms
Inductive and overvoltage output clamp
RL
I IN
1
IN
HITFET
V
Z
D
2
D
ID
VDS
Vbb
S
S
VIN
3
HITFET
Short circuit behaviour
Input circuit (ESD protection)
V IN
I D(SCp)
IN
I D(Lim)
ESD-ZD
I
Source
ID
t0
tm
t1
t2
ESD zener diodes are not designed
for DC current > 2 mA @
V
IN
>10V.
t0:
Turn on into a short circuit
tm: Measurementpoint for
I
D(lim)
t1: Activation of the fast temperature sensor and
regulation of the drain current to a level where
the junction temperature remains constant.
Thermal shutdown caused by the second
temperature sensor, achieved by an
integrating measurement.
t2:
Datasheet
5
Rev. 1.3, 2008-12-10
电机控制
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