SI7465DP_13,SI7465DP_13 pdf中文资料,SI7465DP_13引脚图,SI7465DP

Si7465DP

Vishay Siliconix

P-Channel 60-V (D-S) MOSFET

PRODUCT SUMMARY

V

DS

(V)

- 60

R

DS(on)

(Ω)

0.064 at V

GS

= - 10 V

0.080 at V

GS

= - 4.5 V

I

D

(A)

-5

26

- 4.5

Q

g

(Typ.)

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

• TrenchFET

®

Power MOSFET

• New Low Thermal Resistance PowerPAK

®

Package with Low 1.07 mm Profile

PowerPAK SO-8

6.15 mm

S

1

2

3

S

5.15 mm

G

4

S

D

8

7

6

5

D

G

Bottom View

Ordering Information:

Si7465DP-T1-E3 (Lead (Pb)-free)

Si7465DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

D

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

T

A

= 25 °C, unless otherwise noted

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (T

J

= 150°C)

a

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

a

Avalanche Current

Single Pulse Avalanche Energy

Maximum Power Dissipation

a

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

b,c

T

A

= 25 °C

T

A

= 70 °C

Symbol

V

DS

V

GS

I

D

I

DM

I

S

I

AS

E

AS

P

D

T

J

, T

stg

10 s

Steady State

- 60

± 20

- 3.2

- 2.6

- 25

- 1.2

22

24.2

1.5

0.94

- 55 to 150

260

Unit

V

-5

-4

- 2.9

A

L = 0.1 mH

T

A

= 25 °C

T

A

= 70 °C

mJ

W

°C

3.5

2.2

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

a

Maximum Junction-to-Case (Drain)

t

≤

10 s

Steady State

Symbol

R

thJA

R

thJC

Typical

27

60

3.3

Maximum

36

85

4.3

Unit

°C/W

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and

is not required to ensure adequate bottom side solder interconnection.

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 73113

S09-0271-Rev. C, 16-Feb-09

www.vishay.com

1

Si7465DP

Vishay Siliconix

SPECIFICATIONS

T

J

= 25 °C, unless otherwise noted

Parameter

Static

Gate Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

a

Drain-Source On-State Resistance

a

Forward Transconductance

a

Diode Forward Voltage

a

Dynamic

b

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Source-Drain Reverse Recovery Time

Q

g

Q

gs

Q

gd

R

g

t

d(on)

t

r

t

d(off)

t

f

t

rr

I

F

= - 5 A, dI/dt = 100 A/µs

V

DD

= - 30 V, R

L

= 30

Ω

I

D

≅

- 1.0 A, V

GEN

= –10 V, R

g

= 6

Ω

V

DS

= - 30 V, V

GS

= - 10 V, I

D

= - 5 A

26

4.5

7.0

8

9

65

30

41

15

100

45

70

ns

Ω

40

nC

V

GS(th)

I

GSS

I

DSS

I

D(on)

R

DS(on)

g

fs

V

SD

V

DS

= V

GS

, I

D

= - 250 µA

V

DS

= 0 V, V

GS

= ± 20 V

V

DS

= - 60 V, V

GS

= 0 V

V

DS

= - 60 V, V

GS

= 0 V, T

J

= 70 °C

V

DS

≤

- 5 V, V

GS

= - 10 V

V

GS

= - 10 V, I

D

= - 5 A

V

GS

= - 4.5 V, I

D

= - 4.5 A

V

DS

= - 15 V, I

D

= - 5 A

I

S

= - 2.9 A, V

GS

= 0 V

- 25

0.051

0.064

16

- 0.8

- 1.2

0.064

0.080

- 1.0

- 3.0

± 100

-1

- 10

V

nA

µA

A

Ω

S

V

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Notes:

a. Pulse test; pulse width

≤

300 µs, duty cycle

≤

2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

30

V

GS

= 10 V thru 5 V

25

I

D

- Drain Current (A)

4V

I

D

- Drain Current (A)

25

30

20

15

10

3V

10

T

C

= 125 °C

25 °C

- 55 °C

5

0

2

4

6

8

10

0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

V

DS

- Drain-to-Source Voltage (V)

V

GS

- Gate-to-Source Voltage (V)

Output Characteristics

Transfer Characteristics

www.vishay.com

2

Document Number: 73113

S09-0271-Rev. C, 16-Feb-09

Si7465DP

Vishay Siliconix

TYPICAL CHARACTERISTICS

0.12

25 °C, unless otherwise noted

1800

0.10

R

DS(on)

- On-Resistance (Ω)

C - Capacitance (pF)

1500

C

iss

0.08

V

GS

= 4.5 V

V

GS

= 10 V

1200

0.06

900

0.04

600

C

rss

C

oss

0.02

300

0.00

0

5

10

15

20

25

30

0

10

20

30

40

50

60

V

DS

- Drain-to-Source Voltage (V)

I

D

- Drain Current (A)

On-Resistance vs. Drain Current

20

V

DS

= 30 V

I

D

= 5 A

2.2

2.0

1.8

V

GS

= 10 V

I

D

= 5 A

Capacitance

V

GS

- Gate-to-Source Voltage (V)

16

R

DS(on)

- On-Resistance

1.6

12

(Normalized)

1.4

1.2

1.0

0.8

0.6

8

4

0

10

20

30

40

50

0.4

-

50

-

25

0

25

50

75

100

125

150

Qg - Total Gate Charge (nC)

T

J

- Junction Temperature (°C)

Gate Charge

40

0.30

On-Resistance vs. Junction Temperature

0.25

I

S

- Source Current (A)

T

J

= 150 °C

10

R

DS(on)

- On-Resistance (Ω)

0.20

I

D

= 5 A

0.15

0.10

T

J

= 25 °C

0.05

1

0.0

0.00

0.2

0.4

0.6

0.8

1.0

1.2

0

2

4

6

8

10

V

SD

- Source-to-Drain Voltage (V)

V

GS

- Gate-to-Source Voltage (V)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

Document Number: 73113

S09-0271-Rev. C, 16-Feb-09

www.vishay.com

3

Si7465DP

Vishay Siliconix

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

1.0

0.8

0.6

Power (W)

0.4

0.2

0.0

- 0.2

- 0.4

- 50

20

60

I

D

= 250 µA

80

V

GS(th)

Variance (V)

100

40

- 25

0

25

50

75

100

125

150

0

0.001

0.01

0.1

Time (s)

1

10

T

J

- Temperature (°C)

Threshold Voltage

Single Pulse Power, Junction-to-Ambient

100

10 µs

100 µs

10 Limited by R

DS(on)

*

I

D

- Drain Current (A)

1

1 ms

10 ms

100 ms

0.1

T

A

= 25 °C

Single Pulse

1s

10 s

100 s, DC

0.01

0.001

0.1

1

10

100

V

DS

- Drain-to-Source Voltage (V)

* V

GS

> minimum V

GS

at which R

DS(on)

is specified

Safe Operating Area

2

1

Normalized Effective Transient

Thermal Impedance

Duty Cycle = 0.5

0.2

Notes:

0.1

0.05

t

1

P

DM

0.02

Single Pulse

0.01

10

-4

10

-3

10

-2

10

-1

1

Square Wave Pulse Duration (s)

t

2

1. Duty Cycle, D =

2. Per Unit Base = R

thJA

= 52 °C/W

3. T

JM

-

T

A

= P

DM

Z

thJA(t)

4. Surface Mounted

t

1

t

2

10

100

600

Normalized Thermal Transient Impedance, Junction-to-Ambient

www.vishay.com

4

Document Number: 73113

S09-0271-Rev. C, 16-Feb-09

Si7465DP

Vishay Siliconix

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

2

1

Normalized Effective Transient

Thermal Impedance

Duty Cycle = 0.5

0.2

0.1

0.02

Single Pulse

0.05

0.01

10

-4

10

-3

10

-2

Square Wave Pulse Duration (s)

10

-1

1

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see www.vishay.com/ppg?73113.

Document Number: 73113

S09-0271-Rev. C, 16-Feb-09

www.vishay.com

5

SI7465DP_13

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