Preliminary
Datasheet
RJK0631JPR
60 V - 30 A - N Channel Power MOS FET
High Speed Power Switching
Features
•
•
•
•
•
For Automotive application
AEC-Q101 compliant
Low on-resistance : R
DS(on)
= 12 mΩ typ.
Capable of 4.5 V gate drive
Low input capacitance: Ciss = 1350 pF typ
R07DS0879EJ0200
Rev.2.00
May 23, 2013
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
2
D
1G
1. Gate
2. Drain
3. Source
1 2
3
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10μs duty cycle
≤
1%
2. Tch = 25°C, Rg
≥
50
Ω
3. Tc = 25°C
4. AEC-Q101 compliant
Symbol
V
DSS
V
GSS
I
D
I
D
(pulse)
Note1
I
DR
I
DR
(pulse)
Note1
I
AP Note2
E
AR Note2
Pch
Note3
Tch
Note4
Tstg
Value
60
±20
30
120
30
120
27
62.5
30
175
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
Thermal Impedance Characteristics
•
Channel to case thermal impedance
θch-c:
5.00°C/W
R07DS0879EJ0200 Rev.2.00
May 23, 2013
Page 1 of 6
RJK0631JPR
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note:
5. Pulse test
Symbol
I
GSS
I
DSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
12
15
1350
360
270
32
3.6
10
13
15
60
15
0.94
40
Max
±10
1
2.0
15
20
—
—
—
—
—
—
—
—
—
—
1.17
—
Unit
μA
μA
V
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
V
GS
=
±20
V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 15 A, V
GS
= 10 V
Note5
I
D
= 15 A, V
GS
= 4.5 V
Note5
V
DS
= 10V, V
GS
= 0,
f = 1 MHz
V
DD
= 25 V, V
GS
= 10 V,
I
D
= 30 A
I
D
= 15 A, R
L
= 2
Ω,
V
GS
= 10 V, R
G
= 4.7
Ω
I
F
= 30 A, V
GS
= 0
Note5
I
F
= 30 A, V
GS
= 0
di
F
/dt = 100 A/μs
R07DS0879EJ0200 Rev.2.00
May 23, 2013
Page 2 of 6
RJK0631JPR
Preliminary
Main Characteristics
Power vs. Temperature Derating
50
1000
Maximum Safe Operation Area
Pch (W)
Drain Current I
D
(A)
40
100
1
10
μ
s
10
0
μ
s
Channel Dissipation
30
10
m
s
PW
=
10
20
1
Operation
in this area
is limited R
DS(on)
Tc = 25°C
1 shot Pulse
DC
O
r
pe
s
m
at
io
10
0.1
0.01
0.1
n
0
50
100
150
200
1
10
100
Case Temperature Tc (°C)
Drain to Source Voltage
V
DS
(V)
Typical Output Characteristics
50
10 V
4.5 V
3.1 V
100
Typical Transfer Characteristics
Tc = 175°C
Drain Current I
D
(A)
Drain Current I
D
(A)
40
10
25°C
−40°C
30
V
GS
= 2.6 V
1
20
0.1
10
Tc = 25°C
Pulse Test
0
5
10
0.01
0.001
0
V
DS
= 10 V
Pulse Test
1
2
3
4
5
Drain to Source Voltage V
DS
(V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
50
I
D
= 15 A
Pulse Test
40
30
Tc = 175°C
Gate to Source Voltage V
GS
(V)
Static Drain to Source State Resistance
vs. Drain Current
100
Tc = 25°C
Pulse Test
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
V
GS
= 4.5 V
10
10 V
20
10
0
0
4
8
25°C
−40°C
12
16
20
1
1
10
100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
R07DS0879EJ0200 Rev.2.00
May 23, 2013
Page 3 of 6
RJK0631JPR
Static Drain to Source on State Resistance
vs.
Temperature
50
Pulse
Test
I
D
=
15 A
10000
Tc =
25°C
V
GS
=
0
f
=
1 MHz
3000
Preliminary
Typical
Capacitance vs.
Drain to Source Voltage
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
30
V
GS
= 4.5
V
20
10 V
10
Capacitance C (pF)
40
Ciss
1000
300
Coss
Crss
0
5
10
15
20
25
30
0
−50
100
0
50
100
150
200
Case
Temperature Tc
(°C)
Drain to Source Voltage V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
Gate to Source Voltage V
GS
(V)
20
50
Dynamic
Input
Characteristics
Drain to Source Voltage V
DS
(V)
50
Reverse Drain Current
I
DR
(A)
Tc =
25°C
I
D
=
30 A
V
GS
V
DD
=
25 V
10 V
5V
16
10 V
40
Tc =
25°C
Pulse
Test
40
30
V
DS
20
V
DD
=
25 V
10 V
5V
10
20
30
40
12
30
8
20
V
GS
=
0,
−5
V
10
4
0
10
0
50
0
0.4
0.8
1.2
1.6
2.0
Gate Charge
Qg
(nC)
Source to Drain Voltage V
SD
(V)
Avalanche
Energy
vs.
Channel
Temperature
Derating
Repetitive Avalanche
Energy E
AR
(mJ)
100
I
AP
=
27 A
V
DD
=
25 V
duty
<
0.1
%
Rg
≥
50
Ω
80
60
40
20
0
25
50
75
100
125
150
175
Channel
Temperature Tch
(°C)
R07DS0879EJ0200 Rev.2.00
May 23, 2013
Page 4 of 6
RJK0631JPR
Normalized Transient Thermal Impedance
γ
s (t)
Preliminary
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
D=1
0.5
0.2
0.1
0.1
0.05
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 5°C/W, Tc = 25°C
e
0.02
0.01
h
1s
p
ot
uls
P
DM
PW
T
D=
PW
T
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width PW (S)
Avalanche Test Circuit
V
DS
Monitor
L
I
AP
Monitor
Avalanche Waveform
E
AR
=
1
2
L
•
I
AP
•
2
V
DSS
V
DSS
– V
DD
V
(BR)DSS
Rg
D. U. T
V
DD
I
AP
V
DS
Vin
15 V
50
Ω
I
D
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 30 V
Vin
Vout
Vin
10 V
Vout
Monitor
Switching Time Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
tf
R07DS0879EJ0200 Rev.2.00
May 23, 2013
Page 5 of 6
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