Preliminary
Datasheet
RJK0631JPD
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
•
•
•
•
•
For Automotive application
Low on-resistance : R
DS(on)
= 12 mΩ typ.
Capable of 4.5 V gate drive
Low input capacitance: Ciss = 1350 pF typ
AEC-Q101 compliant
R07DS0252EJ0200
Rev2.00
May 23, 2013
Outline
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK (S))
2, 4
D
4
1. Gate
2. Drain
3. Source
4. Drain
1 G
1
2
3
S
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Strage temperature
Notes: 1. PW
≤
10μs duty cycle
≤
1%
2. Tch = 25°C, Rg
≥
50
Ω
3. Tc = 25°C
4. AEC-Q101 compliant
Symbol
V
DSS
V
GSS
I
D
I
D
(pulse)
Note1
I
DR
I
DR (pulse) Note1
I
AP Note2
E
AR Note2
Pch
Note3
Tch
Note4
Tstg
Value
60
±20
30
120
30
120
27
62.5
45
175
–55 to +150
Unit
V
V
A
A
A
A
A
mJ
W
°C
°C
Thermal Impedance Characteristics
•
Channel to case thermal impedance
θch-c:
3.33°C/W
R07DS0252EJ0200 Rev2.00
May 23, 2013
Page 1 of 6
RJK0631JPD
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery
time
Note:
5. Pulse test
Symbol
I
GSS
I
DSS
V
GS(off)
R
DS(on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
Min
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
12
15
1350
360
270
32
3.6
10
13
15
60
15
0.94
40
Max
±10
1
2.0
15
20
—
—
—
—
—
—
—
—
—
—
1.17
—
Unit
μA
μA
V
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
V
GS
=
±20
V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 15 A, V
GS
= 10 V
Note5
I
D
= 15 A, V
GS
= 4.5 V
Note5
V
DS
= 10V, V
GS
= 0,
f = 1 MHz
V
DD
= 25 V, V
GS
= 10 V,
I
D
= 30 A
I
D
= 15 A, R
L
= 2
Ω,
V
GS
= 10 V, R
G
= 4.7
Ω
I
F
= 30 A, V
GS
= 0
Note5
I
F
= 30 A, V
GS
= 0
di
F
/dt = 100 A/μs
R07DS0252EJ0200 Rev2.00
May 23, 2013
Page 2 of 6
RJK0631JPD
Preliminary
Main Characteristics
Power
vs. Temperature
Derating
50
1000
Maximum
Safe
Operation
Area
Pch (W)
Drain Current
I
D
(A)
40
100
10
10
μ
s
0
μ
s
Channel Dissipation
30
10
P
W
=
1
m
s
10
m
20
1
Operation
in
this area
is limited
R
DS(on)
s
DC
p
e
O
10
0.1
0.01
0.1
Tc =
25°C
1
shot
Pulse
ra
n
t
i
o
0
50
100
150
200
1
10
100
Case
Temperature Tc
(°C)
Drain to Source
Voltage
V
DS
(V)
Typical Output
Characteristics
50
10
V
4.5 V
3.1
V
100
Typical Transfer
Characteristics
Tc =
175°C
Drain Current
I
D
(A)
Drain Current
I
D
(A)
40
10
25°C
−40°C
30
V
GS
=
2.6
V
1
20
0.1
10
Tc =
25°C
Pulse
Test
0
5
10
0.01
0.001
0
V
DS
=
10
V
Pulse
Test
1
2
3
4
5
Drain to Source
Voltage V
DS
(V)
Drain Source Saturation
Voltage vs.
Gate to Source
Voltage
50
I
D
=
15 A
Pulse
Test
40
30
Tc =
175°C
Gate to Source
Voltage V
GS
(V)
Static Drain to Source State Resistance
vs.
Drain Current
100
Tc =
25°C
Pulse
Test
Static Drain to Source
On
State Resistance
R
DS(on)
(mΩ)
Static Drain to Source
On
State Resistance
R
DS(on)
(mΩ)
V
GS
= 4.5 V
10
10
V
20
10
0
0
4
8
25°C
−40°C
12
16
20
1
1
10
100
Gate to Source
Voltage V
GS
(V)
Drain Current
I
D
(A)
R07DS0252EJ0200 Rev2.00
May 23, 2013
Page 3 of 6
RJK0631JPD
Static Drain to Source on State Resistance
vs.
Temperature
50
Pulse Test
I
D
= 15 A
10000
Preliminary
Typical Capacitance
vs.
Drain to Source
Voltage
Tc = 25°C
V
GS
= 0
f
= 1
MHz
Static Drain to Source
On
State Resistance
R
DS(on)
(mΩ)
Capacitance C (pF)
40
3000
Ciss
1000
30
V
GS
= 4.5
V
20
10
V
10
300
Coss
Crss
0
5
10
15
20
25
30
0
−50
100
0
50
100
150
200
Case Temperature Tc (°C)
Drain to Source
Voltage V
DS
(V)
Reverse Drain Current
vs.
Source to Drain
Voltage
Gate to Source
Voltage V
GS
(V)
20
50
Dynamic Input Characteristics
Drain to Source
Voltage V
DS
(V)
50
Tc = 25°C
I
D
= 30 A
40
V
GS
V
DD
= 25
V
10
V
5V
16
Reverse Drain Current I
DR
(A)
10
V
40
Tc = 25°C
Pulse Test
30
V
DS
20
V
DD
= 25
V
10
V
5V
10
20
30
40
12
30
8
20
V
GS
= 0,
−5
V
10
4
0
10
0
50
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nc)
Source to Drain
Voltage V
SD
(V)
Avalanche Energy
vs.
Channel Temperature Derating
Repetitive Avalanche Energy E
AR
(mJ)
100
I
AP
= 27 A
V
DD
= 25
V
duty < 0.1 %
Rg
≥
50
Ω
80
60
40
20
0
25
50
75
100
125
150
175
Channel Temperature Tch (°C)
R07DS0252EJ0200 Rev2.00
May 23, 2013
Page 4 of 6
RJK0631JPD
Normalized Transient Thermal Impedance
γ
s
(t)
Preliminary
Normalized Transient Thermal Impedance
vs.
Pulse
Width
10
1
D=1
0.5
0.2
0.1
0.1
0.0
5
θch
– c(t) =
γs
(t) •
θch
– c
θch
– c = 3.33°C/W, Tc = 25°C
0.01
h
o
u
t
p
l
s
e
P
DM
PW
T
D=
0.02
1
s
PW
T
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse
Width
PW (mS)
Avalanche Test Circuit
V
DS
Monitor
L
I
AP
Monitor
Avalanche
Waveform
E
AR
=
1
2
L
•
IAP2
•
V
DSS
V
DSS
–
V
DD
V
(BR)DSS
Rg
D. U. T
V
DD
I
AP
V
DS
Vin
15
V
50
Ω
I
D
0
V
DD
Switching Time Test Circuit
Vin Monitor
D.U.T.
Rg
R
L
V
DS
= 30
V
Vin
Vout
Vin
10
V
Vout
Monitor
Switching Time
Waveform
90%
10%
10%
10%
90%
td(on)
tr
90%
td(off)
t
f
R07DS0252EJ0200 Rev2.00
May 23, 2013
Page 5 of 6
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