Preliminary
Datasheet
RJH60M7DPQ-E0
600V - 50A - IGBT
Application: Inverter
Features
•
Short circuit withstand time (8
μs
typ.)
•
Low collector to emitter saturation voltage
V
CE(sat)
= 1.6 V typ. (at I
C
= 50 A, V
GE
= 15 V, Ta = 25°C)
•
Built in fast recovery diode (100 ns typ.) in one package
•
Trench gate and thin wafer technology
•
High speed switching
t
f
= 45 ns typ. (at V
CC
= 300 V, V
GE
= 15 V, I
C
= 50 A, Rg = 5
Ω,
Ta = 25°C, inductive load)
R07DS1089EJ0200
Rev.2.00
Jun 25, 2013
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
1 2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW
≤
10
μs,
duty cycle
≤
1%
2. Value at Tc = 25°C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
I
C
(peak)
Note1
I
DF
I
DF
(peak)
Note1
P
C Note2
θj-c
Note2
θj-cd
Note2
Tj
Tstg
Ratings
600
±30
90
50
150
50
200
367
0.34
1.07
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS1089EJ0200 Rev.2.00
Jun 25,2013
Page 1 of 9
RJH60M7DPQ-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
Symbol
I
CES
/ I
R
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
sc
Min
—
—
5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
Typ
—
—
—
1.6
2.0
3150
200
120
170
30
90
60
70
200
45
1.7
1.2
2.9
8
Max
5
±1
7
2.1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
μA
μA
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
μs
Test Conditions
V
CE
= 600 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 50 A, V
GE
= 15 V
Note3
I
C
= 90 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 50 A
V
CC
= 300 V
V
GE
= 15 V
I
C
= 50 A
Rg = 5
Ω
(Inductive load)
Tc = 100
°C
V
CC
≤
360 V, V
GE
= 15 V
I
F
= 50 A
Note3
I
F
= 50 A
diF/dt = 100 A/μs
FRD forward voltage
FRD reverse recovery time
FRD reverse recovery charge
FRD peak reverse recovery current
Notes: 3. Pulse test
V
F
t
rr
Q
rr
I
rr
—
—
—
—
1.4
100
0.27
5
2.0
—
—
—
V
ns
μC
A
R07DS1089EJ0200 Rev.2.00
Jun 25,2013
Page 2 of 9
RJH60M7DPQ-E0
Preliminary
Main Characteristics
Collector Dissipation vs.
Case Temperature
400
100
Maximum DC Collector Current vs.
Case Temperature
Collector Dissipation Pc (W)
Collector Current I
C
(A)
0
25
50
75
100 125 150 175
350
300
250
200
150
100
50
0
80
60
40
20
0
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
200
Turn-off SOA
Collector Current I
C
(A)
100
Collector Current I
C
(A)
1000
PW
10
0
μ
s
=1
0
μ
160
s
10
120
1
80
0.1
Tc = 25°C
Single pulse
40
0.01
1
0
10
100
0
200
400
600
800
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics
160
Tc = 25
°
C
Pulse Test
15 V
18 V
12 V
160
Typical Output Characteristics
Tc = 150
°
C
Pulse Test
15 V
18 V
12 V
Collector Current I
C
(A)
120
Collector Current I
C
(A)
120
80
80
10 V
40
V
GE
= 8.5 V
0
0
1
2
3
4
5
40
10 V
V
GE
= 8.5 V
0
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
R07DS1089EJ0200 Rev.2.00
Jun 25,2013
Page 3 of 9
RJH60M7DPQ-E0
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
5
Tc = 25
°
C
Pulse Test
4
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
5
Tc = 150
°
C
Pulse Test
4
3
3
I
C
= 90 A
2
50 A
25 A
1
8
10
12
14
16
18
20
2
I
C
= 90 A
50 A
1
8
10
12
14
16
25 A
18
20
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Typical Transfer Characteristics
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
160
4
V
GE
= 15 V
Pulse Test
3
I
C
= 90 A
2
50 A
25 A
1
Collector Current I
C
(A)
Ta = 25°C
120
150°C
80
40
V
CE
= 10 V
Pulse Test
0
0
4
8
12
16
20
0
−25
0
25
50
75
100 125 150
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
40
Junction Temparature Tj (
°
C)
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
Frequency Characteristics (Typical)
Collector Current I
C(RMS)
(A)
35
0
8
I
C
= 10 mA
30
25
20
15 Tj = 125°C
Tc = 90°C
10 V
CE
= 400 V
V
GE
= 15 V
5 Rg = 5
Ω
duty = 50%
0
1
10
Collector current wave
(Square wave)
6
1 mA
4
2
V
CE
= 10 V
Pulse Test
0
−25
0
25
50
75
100 125 150
100
1000
Junction Temparature Tj (°C)
Frequency f (kHz)
R07DS1089EJ0200 Rev.2.00
Jun 25,2013
Page 4 of 9
RJH60M7DPQ-E0
Switching Characteristics (Typical) (1)
1000
Preliminary
Switching Characteristics (Typical) (2)
100
Swithing Energy Losses E (mJ)
Switching Times t (ns)
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Tc = 150
°
C
10
100
td(off)
tf
td(on)
1
Eoff
Eon
10
tr
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Tc = 150
°
C
1
10
100
0.1
1
0.01
1
10
100
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
10000
V
CC
= 300 V, V
GE
= 15 V
I
C
= 50 A, Tc = 150
°
C
1000
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
Swithing Energy Losses E (mJ)
10
Eon
1
Eoff
Switching Time t (ns)
td(off)
100
td(on)
tr
tf
0.1
V
CC
= 300 V, V
GE
= 15 V
I
C
= 50 A, Tc = 150
°
C
0.01
1
10
100
10
1
10
100
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
Switching Times t (ns)
td(off)
100
td(on)
10
tr
tf
Swithing Energy Losses E (mJ)
10
Eon
1
Eoff
0.1
1
25
V
CC
= 300 V, V
GE
= 15 V
I
C
= 50 A, Rg = 5
Ω
50
75
100
125
150
0.01
25
V
CC
= 300 V, V
GE
= 15 V
I
C
= 50 A, Rg = 5
Ω
50
75
100
125
150
Junction Temperature Tj (°C)
(Inductive load)
Junction Temperature Tj (°C)
(Inductive load)
R07DS1089EJ0200 Rev.2.00
Jun 25,2013
Page 5 of 9
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