Preliminary
Datasheet
RJH60M5DPQ-E0
600V - 37A - IGBT
Application: Inverter
Features
•
Short circuit withstand time (8
μs
typ.)
•
Low collector to emitter saturation voltage
V
CE(sat)
= 1.8 V typ. (at I
C
= 37 A, V
GE
= 15 V, Ta = 25°C)
•
Built in fast recovery diode (100 ns typ.) in one package
•
Trench gate and thin wafer technology
•
High speed switching
t
f
= 60 ns typ. (at V
CC
= 300 V, V
GE
= 15 V, I
C
= 37 A, Rg = 5
Ω,
Ta = 25°C, inductive load)
R07DS1087EJ0200
Rev.2.00
Jun 18, 2013
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
1 2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW
≤
10
μs,
duty cycle
≤
1%
2. Value at Tc = 25°C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
I
C
(peak)
Note1
I
DF
I
DF
(peak)
Note1
P
C Note2
θj-c
Note2
θj-cd
Note2
Tj
Tstg
Ratings
600
±30
75
37
110
30
110
200
0.63
2.1
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS1087EJ0200 Rev.2.00
Jun 18, 2013
Page 1 of 9
RJH60M5DPQ-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
Symbol
I
CES
/I
R
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
sc
Min
—
—
5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
Typ
—
—
—
1.8
2.4
1900
120
70
114
20
65
52
64
147
60
1.06
0.82
1.88
8
Max
5
±1
7
2.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
μA
μA
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
μs
Test Conditions
V
CE
= 600 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 37 A, V
GE
= 15 V
Note3
I
C
=75 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 37 A
V
CC
= 300 V
V
GE
= 15 V
I
C
= 37 A
Rg = 5
Ω
Inductive load
Tc = 100
°C
V
CC
≤
360 V, V
GE
= 15 V
I
F
= 30 A
Note3
I
F
= 30 A
di
F
/dt = 100 A/μs
FRD forward voltage
FRD reverse recovery time
FRD reverse recovery charge
FRD peak reverse recovery current
Notes: 3. Pulse test.
V
F
t
rr
Q
rr
I
rr
—
—
—
—
1.4
100
0.19
4.9
1.9
—
—
—
V
ns
μC
A
R07DS1087EJ0200 Rev.2.00
Jun 18, 2013
Page 2 of 9
RJH60M5DPQ-E0
Preliminary
Main Characteristics
Collector
Dissipation vs.
Case
Temperature
250
100
Maximum DC
Collector Current
vs.
Case
Temperature
Collector
Dissipation
Pc (W)
200
Collector Current
I
C
(A)
0
25
50
75
100 125 150 175
80
150
60
100
40
50
20
0
0
0
25
50
75
100 125 150 175
Case
Temperature Tc
(°C)
Case
Temperature Tc
(°C)
Maximum
Safe Operation Area
1000
140
Turn-off
SOA
Collector Current
I
C
(A)
100
10
0
P
W
µ
s
Collector Current
I
C
(A)
120
100
80
60
40
20
0
=
10
µ
s
10
1
Tc =
25°C
Single
pulse
10
100
1000
0.1
1
0
200
400
600
800
Collector to
Emitter Voltage V
CE
(V)
Collector to
Emitter Voltage V
CE
(V)
Typical
Output Characteristics
120
120
Tc =
25
°
C
Pulse
Test
Typical
Output Characteristics
Tc =
150
°
C
Pulse
Test
Collector Current
I
C
(A)
Collector Current
I
C
(A)
100
80
60
40
20
0
0
15
V
12
V
100
80
60
40
20
0
15
V
12
V
10
V
10
V
V
GE
= 8.5 V
V
GE
= 8.5 V
1
2
3
4
5
0
1
2
3
4
5
Collector to
Emitter Voltage V
CE
(V)
Collector to
Emitter Voltage V
CE
(V)
R07DS1087EJ0200 Rev.2.00
Jun 18, 2013
Page 3 of 9
RJH60M5DPQ-E0
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
5
Tc = 25
°
C
Pulse Test
4
Preliminary
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
5
Tc = 150
°
C
Pulse Test
4
3
I
C
= 75 A
2
37 A
18.5 A
1
8
10
12
14
16
18
20
3
I
C
= 75 A
2
37 A
18.5 A
1
8
10
12
14
16
18
20
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
5
V
GE
= 15 V
Pulse Test
Typical Transfer Characteristics
120
Collector Current I
C
(A)
100
80
60
40
20
0
0
4
Ta = 25°C
150°C
4
3
I
C
= 75 A
37 A
18.5 A
2
1
V
CE
= 10 V
Pulse Test
8
12
16
20
0
−25
0
25
50
75
100 125 150
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
10
20
Junction Temparature Tj (
°
C)
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
Frequency Characteristics (Typical)
Collector Current I
C(RMS)
(A)
8
I
C
= 10 mA
6
1 mA
16
0
Collector current wave
(Square wave)
12
4
8
2
V
CE
= 10 V
Pulse Test
0
−25
0
25
50
75
100 125 150
Tj = 125°C
Tc = 90°C
V
CE
= 400 V
4
V
GE
= 15 V
Rg = 5
Ω
duty = 50%
0
1
10
100
1000
Junction Temparature Tj (°C)
Frequency f (kHz)
R07DS1087EJ0200 Rev.2.00
Jun 18, 2013
Page 4 of 9
RJH60M5DPQ-E0
Switching Characteristics (Typical) (1)
1000
Preliminary
Switching Characteristics (Typical) (2)
100
Swithing Energy Losses E (mJ)
Switching Times t (ns)
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Tc = 150
°
C
10
td(off)
100
tf
td(on)
10
tr
1
Eoff
Eon
0.1
1
1
V
CC
= 300 V, V
GE
= 15 V
Rg = 5
Ω,
Tc = 150
°
C
10
100
0.01
1
10
100
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
10000
V
CC
= 300 V, V
GE
= 15 V
I
C
= 37 A, Tc = 150
°
C
1000
td(off)
tr
td(on)
10
1
10
100
tf
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
Swithing Energy Losses E (mJ)
10
Eon
Eoff
1
Switching Time t (ns)
100
0.1
V
CC
= 300 V, V
GE
= 15 V
I
C
= 37 A, Tc = 150
°
C
0.01
1
10
100
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
Swithing Energy Losses E (mJ)
10
Switching Times t (ns)
td(off)
100
tr
tf
td(on)
10
Eon
1
Eoff
0.1
1
25
V
CC
= 300 V, V
GE
= 15 V
I
C
= 37 A, Rg = 5
Ω
50
75
100
125
150
0.01
25
V
CC
= 300 V, V
GE
= 15 V
I
C
= 37 A, Rg = 5
Ω
50
75
100
125
150
Junction Temperature Tj (°C)
(Inductive load)
Junction Temperature Tj (°C)
(Inductive load)
R07DS1087EJ0200 Rev.2.00
Jun 18, 2013
Page 5 of 9
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